DLA SMD-5962-96553 REV G-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R093-97. 96-11-18 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-09-14 Thomas M. Hess C Correct the title to accurately describe the device function. Chang

2、e figure 4, switching waveforms and test circuit Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-09-13 Thomas M. Hess D Add device types 02 and 03. Add die appendix. Add footnote 6/ to table IB and remove table III, Irradiation test connections. - jak 08-05-05 Thomas M. Hess E

3、Change footnote 6/ in section 1.5. - LTG 08-12-04 Thomas M. Hess F To change radiation level H to G for device type 01 in section 1.5. Update footnote 2/ in table IA and table IB. Update boilerplate paragraphs to current requirements of MIL-PRF-38535. - MAA 11-04-19 David J. Corbett G Add equivalent

4、 test circuits and footnote 5 to figure 4. Delete class M requirements. - MAA 12-10-25 Thomas M. Hess REV SHEET REV G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen

5、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, AD

6、VANCED CMOS, RADIATION HARDENED, QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-07-02 REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96553 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E019-13 Provided by IHSNot for ResaleNo reproduc

7、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96553 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high re

8、liability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is a

9、s shown in the following example: 5962 G 96553 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked de

10、vices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS157 Radiation hardened,

11、 quadruple 2-line to 1-line data selector/multiplexer, TTL compatible inputs 02 54ACTS157E Enhanced, radiation hardened, quadruple 2-line to 1-line data selector/multiplexer, TTL compatible inputs 03 54ACTS157E Enhanced, radiation hardened, quadruple 2-line to 1-line data selector/multiplexer, TTL c

12、ompatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as desi

13、gnated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo repro

14、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96553 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC inpu

15、t voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resi

16、stance, junction-to-case (JC): Case outline E and X, device type 01 See MIL-STD-1835 Case outline X, device types 02 and 03 . 15C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.3 W 4/ 1.4 Recommended operating conditions. 2/

17、 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 5/ Case operating temperature ran

18、ge (TC) . -55C to +125C 1.5 Radiation features. Maximum total dose available: Device type 01 (dose rate = 50 300 rad (Si)/s) 500 Krad (Si) Device type 02 (effective dose rate = 1 rad (Si)/s) 1 Mrad(Si) 6/ Device type 03 (dose rate = 50 300 rad (Si)/s) 500 Krad (Si) Single event phenomenon (SEP): Dev

19、ice type 01: No SEU at an effective LET (see 4.4.4.4) 80 MeV/(mg/cm2) 8/ 7/ No SEL at an effective LET (see 4.4.4.4) 120 MeV/(mg/cm28/ 7/ Device types 02 and 03: No SEU at an effective LET (see 4.4.4.4) 108 MeV/(mg/cm2) 8/ 7/ No SEL at an effective LET (see 4.4.4.4) 120 MeV/(mg/cm2) 8/ 7/ Dose rate

20、upset (20 ns pulse) 1 x 109rad(Si)/s 8/ 9/ Dose rate induced latch-up None 8/ Dose rate survivability . 1 x 1012rad (Si)/s 8/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliabilit

21、y. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (

22、TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified.

23、The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. 7/ Radiation testing is performed on the sta

24、ndard evaluation circuit (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device types 01, 02, and 03 with VDD 4.5 V. Device types 02 and 03 do not meet this limit

25、at VDD 4.5 V.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96553 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specifi

26、cation, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-3

27、8535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit D

28、rawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following

29、 document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by He

30、avy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org/ or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 Standard for Description

31、of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS devices. JESD78 IC Latch-Up Test. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201-2107.) 2.3 Order of precedence.

32、In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reprodu

33、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96553 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V

34、 shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements for microcircuit d

35、ie, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2

36、.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and

37、 test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical perform

38、ance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements.

39、 The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where markin

40、g of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535

41、. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to sup

42、ply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF

43、-38535 and herein . 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

44、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96553 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup

45、A subgroups Limits 3/ Unit Min Max Low level input voltage VIL02, 03 3.0 V and 3.6 V 1, 2, 3 0.8 V All 4.5 V and 5.5 V 1, 2, 3 0.8 High level input voltage VIH02, 03 3.0 V and 3.6 V 1, 2, 3 2.0 V All 4.5 V and 5.5 V 1, 2, 3 0.5VDD High level output voltage VOHFor all inputs affecting output under te

46、st VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOH= -6 mA 02, 03 3.0 V 1, 2, 3 2.4 V For all inputs affecting output under test VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOH= -8 mA All 4.5 V 1, 2, 3 3.15 Low level output voltage VOLFor all inputs affecting output under test VIN= VDDor VS

47、SFor all other inputs VIN= VDDor VSSIOL= +6 mA 02, 03 3.0 V and 3.6 V 1, 2, 3 0.4 V For all inputs affecting output under test VIN= VDDor VSSFor all other inputs VIN= VDDor VSSIOL= +8 mA All 4.5 V 1, 2, 3 0.4 Input current high IIHFor input under test, VIN= VDDFor all other inputs VIN= VDDor VSSAll

48、5.5 V 1, 2, 3 +1.0 A Input current low IILFor input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A Output current (sink) IOL 4/ VIN= VDDor VSSVOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA VIN= VDDor VSSVOL= 0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 6.0 Output current (source) IOH 4/ VIN= VDDor VSSVOH= VDD-0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 -8.0 mA All 4.5 V and 5.5 V 1, 2, 3 -8.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license