DLA SMD-5962-96525 REV H-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS HEX INVERTER SCHMITT TRIGGER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R082-97. - JAK 96-11-25 Monica L. Poelking B Changes in accordance with NOR 5962-R268-97. - CFS 97-04-22 Monica L. Poelking C Changes in accordance with NOR 5962-R079-99. - JAK 99-09-10 Monica L. Poelking D Add

2、 limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. - TVN 05-08-24 Thomas M. Hess E Add device types 02 and 03. Add appendix A. Add ASTM guideline in 2.2. Correct voltage level testing in

3、 switching waveforms and test circuit, figure 4. Updated RHA testing paragraphs in 4.4.4.1 - 4.4.4.4. - JAK 07-10-05 Thomas M. Hess F Add note 9/ to section 1.5 for device types 02 and 03. Add footnote to table IB for maximum device cross section. Delete table III, Irradiation test connections. - ja

4、k 08-05-05 Thomas M. Hess G Change footnote 6/ in section 1.5. - LTG 08-12-04 Thomas M. Hess H Add equivalent test circuit and footnote 5 in figure 4. Delete class M requirements. - MAA 12-07-24 Thomas M. Hess REV SHEET REV H H H H H H H H SHEET 15 16 17 18 19 20 21 22 REV STATUS OF SHEETS REV H H H

5、 H H H H H H H H H H H SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DE

6、FENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, HEX INVERTER SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-05-31 REVISION LEVEL H SIZE A CAGE CODE 67268 5962-96525 SHEET 1 OF 22 D

7、SCC FORM 2233 APR 97 5962-E295-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This

8、drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hard

9、ness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96525 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) /

10、 Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: De

11、vice type Generic number Circuit function 01 54ACTS14 Radiation hardened, hex inverter Schmitt trigger, TTL compatible inputs 02 54ACTS14E Enhanced radiation hardened, hex inverter Schmitt trigger, TTL compatible inputs 03 54ACTS14E Enhanced radiation hardened, hex inverter Schmitt trigger, TTL comp

12、atible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as des

13、ignated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo repr

14、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC inp

15、ut voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal re

16、sistance, junction-to-case (JC): Case outline C and X, device type 01 See MIL-STD-1835 Case outline X , device types 02 and 03 15.5C/W Junction temperature (TJ) +175C Maximum power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.3 W 4/ 1.4 Recommended operating conditions. 2/ 3/ S

17、upply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 5/ Case operating temperature range (T

18、C) . -55C to +125C 1.5 Radiation features. Maximum total dose available: Device type 01 (dose rate = 50 300 rads (Si)/s) 5 x 105Rads (Si) Device type 02 (effective dose rate = 1 rad (Si)/s) . 1 x 106Rads (Si) 6/ Device type 03 (dose rate = 50 300 rads (Si)/s) 5 x 105Rads (Si) Single event phenomenon

19、 (SEP): Device type 01: No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 8/ 7/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV/(mg/cm2) 8/ 7/ Device types 02 and 03: No SEU occurs at effective LET (see 4.4.4.4) . 108 MeV/(mg/cm2) 8/ 7/ No SEU occurs at effective LET (see 4.4.4.4

20、) . 120 MeV/(mg/cm2) 8/ 7/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 8/ 9/ Dose rate latch-up . None 8/ Dose rate survivability . 1 x 1012Rads (Si)/s 8/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

21、 performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 101

22、2.1 section 3.4.1, PD(Package) = (TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed t

23、o a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. 7/ Radiati

24、on testing is performed on the standard evaluation circuit. (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types

25、 02 and 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICAB

26、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

27、 OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-10

28、3 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Gov

29、ernment publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single

30、Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conf

31、lict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item re

32、quirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. Fo

33、r the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be

34、 in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test

35、 circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHE

36、ET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics a

37、nd postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test

38、requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN

39、 number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/c

40、ompliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements

41、 of this drawing (see 6.6.1 herein. The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 C

42、ertificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

43、CIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Uni

44、t Min Max Schmitt trigger positive-going threshold VT+02, 03 3.0 V and 3.6 V 1, 2, 3 2.0 V All 4.5 V 1, 2, 3 2.25 All 5.5 V 1, 2, 3 2.25 Schmitt trigger negative-going threshold VT-02, 03 3.0 V and 3.6 V 1, 2, 3 0.5 V All 4.5 V 1, 2, 3 0.5 All 5.5 V 1, 2, 3 0.5 Hysteresis (VT+ - VT-) VH02, 03 3.0 V

45、1, 2, 3 0.2 1.2 V All 4.5 V 1, 2, 3 0.4 1.5 High level output voltage VOHFor all inputs affecting output under test VIN= VDDor VSSIOH= -6 mA 02, 03 3.0 V 1, 2, 3 2.4 V For all inputs affecting output under test VIN= VDDor VSSIOH= -8 mA All 4.5 V 1, 2, 3 3.15 Low level output voltage VOLFor all input

46、s affecting output under test VIN= VDDor VSSIOL= 6 mA 02, 03 3.0 V and 3.6 V 1, 2, 3 0.4 V For all inputs affecting output under test VIN= VDDor VSSIOL= 8 mA All 4.5 V 1, 2, 3 0.4 Input current high IIHFor input under test VIN= VDDFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A Input cur

47、rent low IILFor input under test VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A Output current (source) IOH 4/ For output under test VOUT= VDD - 0.4 V VIN= VDDor VSS02, 03 3.0 V and 3.6 V 1, 2, 3 -6.0 mA For output under test VOUT= VDD - 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1

48、, 2, 3 -8.0 Output current (sink) IOL 4/ For output under test VOUT= 0.4 V VIN= VDDor VSS02, 03 3.0 V and 3.6 V 1, 2, 3 6.0 mA For output under test VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96525 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ 2/ -55