DLA SMD-5962-95794 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 硅单片电路线型微电路.pdf

《DLA SMD-5962-95794 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 硅单片电路线型微电路.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95794 REV B-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 硅单片电路线型微电路.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes made in accordance with NOR 5962-R147-98. 98-07-31 Monica L. Poelking B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. LTG 04-04-15 Thomas M. Hess REV SHET REV B B B B B B B B B B S

2、HEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS

3、 DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-05 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION

4、LEVEL B SIZE A CAGE CODE 67268 5962-95794 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E227-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISI

5、ON LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Pa

6、rt or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95794 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class d

7、esignator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-

8、38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS573 Radiation hardened, SOS, high spe

9、ed CMOS, octal transparent latch with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 c

10、ompliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package styl

11、e R CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

12、NDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC out

13、put voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case R 24C/W Case

14、 X 28C/W Thermal resistance, junction-to-ambient (JA): Case R 72C/W Case X 107C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case R 0.69 W Case X 0.47 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Case operating

15、temperature range (TC). -55C to +125C Input voltage range (VIN) 0 V to VCCOutput voltage range (VOUT). 0 V to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCMaximum input rise and fall time at VCC= 4.5 V (tr, tf) 500 ns Radiation features: Total

16、dose . 2 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010 Rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 2. APPLICABLE DOCUMENTS 2.1 Governmen

17、t specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION

18、MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages

19、are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating i

20、s based on JA) at the following rate: Case R. 13.9 mW/C Case X. 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS

21、 COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircu

22、it Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of pr

23、ecedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requ

24、irements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described he

25、rein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and phy

26、sical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal

27、 connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circu

28、it shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristic

29、s and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in t

30、able I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the

31、device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification

32、mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

33、T DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the

34、requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an a

35、pproved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conf

36、ormance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of produ

37、ct (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable

38、 required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by I

39、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Te

40、st conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ Unit Min Max For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 V M, D, P, L, R 3/ All 4.5 V 1 4.40 For all inputs affect

41、ing output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, P, L, R 3/ All 5.5 V 1 5.40 For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 M,

42、 D, P, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs VIN= VCCor GND IOL= 50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, P, L, R 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All

43、 2, 3 +5.0 Input current high IIHM, D, P, L, R 3/ All 5.5 V 1 +5.0 A 1 -0.5 For input under test, VIN= GND For all other inputs VIN= VCCor GND All 2, 3 -5.0 Input current low IILM, D, P, L, R 3/ All 5.5 V 1 -5.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or network

44、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C

45、 unless otherwise specified Device type VCC Group A subgroups Limits 2/ Unit Min Max 1 +1.0 OE = 5.5 V For all other inputs VIN= 0.0 V or 5.5 V VOUT= 5.5 V All 2, 3 +50.0 Three-state output leakage current high IOZHM, D, P, L, R 3/ All 5.5 V 1 +50.0 A 1 -1.0 OE = 5.5 V For all other inputs VIN= 0.0

46、V or 5.5 V VOUT= 0.0 V All 2, 3 -50.0 Three-state output leakage current low IOZLM, D, P, L, R 3/ All 5.5 V 1 -50.0 A 1 -7.2 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 4.1 V All 2, 3 -6.0 Output current high (Source) IOHM, D, P, L, R 3/ A

47、ll 4.5 V 1 -6.0 mA 1 7.2 For all inputs affecting output under test VIN= 4.5 V or 0.0 V For all other inputs VIN= VCCor GND VOUT= 0.4 V All 2, 3 6.0 Output current low (Sink) IOLM, D, P, L, R 3/ All 4.5 V 1 6.0 mA 1 40.0 VIN= VCCor GND All 2, 3 750 Quiescent supply current ICCM, D, P, L, R 3/ All 5.

48、5 V 1 750 A Input capacitance CIN5.0 V 4 10.0 pF 4 30.0 Power dissipation capacitance 4/ CPDVIH= 5.0 V VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 5, 6 60.0 pF VIH= 3.15 V, VIL= 1.35 V See 4.4.1b All 7, 8 L H Functional test 5/ M, D, P, L, R 3/ All 4.5 V 7 L H See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95794 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Cont