DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL J-K FLIP-FLOP WITH SET AND RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体.pdf

《DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL J-K FLIP-FLOP WITH SET AND RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL J-K FLIP-FLOP WITH SET AND RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体.pdf（25页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes IAW NOR 5962-R031-98 -cfs 98-01-28 Monica L. PoelkingB Add device class T criteria. Editorial changes throughout. - jak 98-12-09 Monica L. PoelkingC Correct the Total Dose Rate and update RHA levels. LTG 99-04-29 Monica L. PoelkingREVSHEET

2、REV B B B B B B B B B BSHEET 15 16 17 18 19 20 21 22 23 24REV STATUS REV C B C B B C C C C B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Thanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING I

3、S AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, RADIATION HARDENED,HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SETAND RESET, TTL COMPATIBLE INPUTS, MONOLITHICAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-30SILICONAMSC N/A REVISION LEVELCSIZ

4、EACAGE CODE67268 5962-95769SHEET 1 OF 24DSCC FORM 2233APR 97 5962 -E 240-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95769D

5、EFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2DSCC FORM 2234APR 971 . SCOPE1.1 Scope . This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M),space application (device class V) and for appropriate satellite

6、 and similar applications (device class T). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of RadiationHardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to

7、 review the manufacturersQuality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.1.2 PIN . The PIN is as shown in the following example:5962 R 95769 01 V X CFederal RHA Device Device Case Lead stock class designator type class outli

8、ne finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / ( see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class M RHA marked de

9、vices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA devic e.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 HCTS109 Radiation

10、 hardened, SOS, high speed CMOS,dual J-K flip-flop with set and reset, TTLcompatible inputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to t

11、he requirements for MIL-STD-883 compli ant, non -JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ, V Certification and qualification to MIL-PRF-38535T Certification and qualification to MIL-PRF-38535 with performance as specifiedin the device manufacturers approved qualit

12、y management plan.1.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleE CDIP2-T16 16 Dual-in-lineX CDFP4-F16 16 Flat pack1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for devi

13、ce classes Q, T and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95769DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3DSCC FORM

14、 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC input current, any one input (I IN ) . 10 mADC output current, any on

15、e output (I OUT ) . 25 mAStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):Case outline E . 24 C/WCase outline X . 29 C/WThermal resistance, junction -to -ambient ( JA ):Case outline E . 73 C/WCase outline X

16、 . 114 C/WJunction temperature (T J ) . +175 CMaximum package power dissipation at T A = +125 C (P D ) : 4 /Case outline E . 0.68 WCase outline X . 0.44 W1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.5 V dc to +5.5 V dcInput voltage range (V IN ) . +0.0 V dc to V CC

17、Output voltage range (V OUT ) . +0.0 V dc to V CCMaximum low level input voltage (V IL ) . 0.8 VMinimum high level input voltage (V IH ) V CC /2Case operating temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time at V CC = 4.5 V ( t r , t f ) 500 ns1.5 Radiation features :Maximu

18、m total dose available (dose rate = 50 300 rad ( Si)/s)(Device classes M ,Q, or V) . 2 x 10 5 Rads (Si)(Device class T) 1 x 10 5 Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm 2 /mg) 5 /Dose rate upset (20 ns pulse) 1 x 10 10 Rads (S

19、i)/ s 5 /Latch-up None 5 /Dose rate survivability . 1 x 10 12 Rads (Si)/ s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwise noted, all voltages are r

20、eferen ced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds package dissipation capability, provide heat s inking or derate linearly (the derating i

21、s based on JA ) atthe following rate:Case outline E . 13.7 mW/ CCase outline X . 8.8 mW/ C5 / Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95769DEFENSE SUPPLY CE

22、NTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unless otherwise specifi

23、ed, the issues of these documents are those listed in the issueof the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for

24、.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawing s (SMDs).MIL -HDBK -780 - Stand

25、ard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text

26、of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device cla

27、sses Q, T and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for deviceclass M

28、 shall be in accordance with MIL-PRF-38535 , appendix A and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specif

29、ied inMIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth

30、 table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . A representative logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.3.2.6 Irradiation test connections

31、 . The irradiation test connections shall be as specified in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95769DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5DSCC FO

32、RM 2234APR 973.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operatingtemperature range.3

33、.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be mark

34、edas listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designatorshall still be marked. Marking for device class

35、es Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device classM shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark

36、 for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q, T and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For

37、 device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply for this drawingshall affirm

38、 that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and hereinor for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q, T and V in

39、MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of produc t (see 6.2 herein)involving devices acquired to

40、this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documentation. Offshore documentation sha

41、ll be made availableonshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 38 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitte

42、d without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95769DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDev

43、icetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxHigh level outputvoltageV OH For all inputs affecting Output under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, P, L, R3 /All 1 4.40For all inputs affectingoutput under testV IN = 2.75 V o

44、r 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 5.40V IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 5.40Low level outputvoltageV OL For all inputs affectingoutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1F

45、or all inputs affectingoutput under testV I N = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V CC or GNDAll 5.5 V 1 +0.5 A2, 3 +5.0M, D, P, L, R3 /A

46、ll 1 +5.0Input current lowI IL For input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -5.0M, D, P, L, R3 /All 1 -5.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCU

47、IT DRAWINGSIZEA 5962-95769DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 /

48、 UnitMin MaxOutput current high(Source)I OH For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 -4.8 mAFor all other inputs 2, 3 -4.0V IN = V CC or GNDV OU T = 4.1 V M, D, P, L, R 3 / All 1 -4.0Output current low(Sink)I OL For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 4.8 mAFor all other inputs 2, 3 4.0V IN = V CC or GNDV OUT = 0.4 V M, D, P, L, R 3 / All 1 4.0Quiescent supplycurrent delta,I CC4 /For input under testV IN = V CC - 2.1 VAll 5.5 V 1, 2, 3 1.6 mATTL input l