DLA SMD-5962-95750 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED DUAL FOUR-STAGE BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-95750 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED DUAL FOUR-STAGE BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95750 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED DUAL FOUR-STAGE BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(24页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R077-98 98-03-27 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00-10-05 Monica L. Poelking C Correct title to more accurately describe the f
2、unction. Update the radiation features in section 1.5 and paragraphs 4.4.4.1, 4.4.4.3 and 4.4.4.4. Update the boilerplate paragraphs to current requirements as specified in MIL-PRF-38535. - jak 09-12-04 Thomas M. Hess REV SHET REV C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS RE
3、V C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTM
4、ENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, DUAL FOUR-STAGE BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-03 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-957
5、50 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E034-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95750 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 9
6、7 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When av
7、ailable, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95750 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see
8、 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels
9、 and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCTS393 Radiation hardened, SOS, high speed CMOS, dual four-stage binary count
10、er, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B
11、microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line pa
12、ckage X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DR
13、AWING SIZE A 5962-95750 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VO
14、UT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) . 25 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case outlin
15、e X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage
16、range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH) . VCC/2 Case operating temperature range (TC) . -55C to +125C Maximum input rise and fall time
17、 at VCC= 4.5 V (tr, tf) 500 ns 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s) 2 x 105Rads (Si) Single event phenomenon (SEP) effective: linear energy threshold (LET), no upsets (see 4.4.4.4) . 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si
18、)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are re
19、ferenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is base
20、d on JA) at the following rate: Case C . 13.5 mW/C Case X . 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95750 DEFENSE SUPPLY CENTER COLUMBUS COL
21、UMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issu
22、es of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standar
23、d Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document O
24、rder Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
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