DLA SMD-5962-95551 REV C-2008 MICROCIRCUIT LINEAR DUAL MICROPOWER VOLTAGE COMPARATORS MONOLITHIC SILICON《线性单硅片微电路 带二元微功率电压比较器》.pdf

《DLA SMD-5962-95551 REV C-2008 MICROCIRCUIT LINEAR DUAL MICROPOWER VOLTAGE COMPARATORS MONOLITHIC SILICON《线性单硅片微电路 带二元微功率电压比较器》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95551 REV C-2008 MICROCIRCUIT LINEAR DUAL MICROPOWER VOLTAGE COMPARATORS MONOLITHIC SILICON《线性单硅片微电路 带二元微功率电压比较器》.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R019-97. 96-10-17 R. MONNIN B Drawing updated to reflect current requirements. -ro 01-01-29 R. MONNIN C Five year review requirement. -rrp 08-07-07 R. HEBER REV SHET REV SHET REV STATUS REV C C C C C C C C C

2、 C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY MARCIA B. KELLEHER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MI

3、CROCIRCUIT, LINEAR, DUAL MICROPOWER VOLTAGE COMPARATORS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-12-27 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95551 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E193-07 Provided by IHSNot for ResaleNo reproducti

4、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting o

5、f space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Har

6、dness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95551 01 N X X Federal stock class designator RHA designator (see 1

7、.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Devi

8、ce class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit funct

9、ion 01 TLC193M Dual micropower voltage comparators 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 complian

10、t, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification and qualification to MIL-PRF-38535 with a nontraditional performance environment (encapsulated in plastic) Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outli

11、ne(s) are as designated in MIL-STD-1835, JEDEC Publication 95, and as follows: Outline letter Descriptive designator Terminals Package style Document P GDIP1-T8 or CDIP2-T8 8 Dual-in-line MIL-STD-1835 X MS-012-AA 8 Plastic, small outline JEP 95 1.2.5 Lead finish. The lead finish is as specified in M

12、IL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI

13、SION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.6 Device class N manufacturer PIN. For device class N, plastic encapsulated microcircuits (PEMS) the following manufacturer PIN (see 3.5.1 herein) shall be marked: Standard 1/ microcircuit drawing PIN Manufacturer PIN 5962-9555101NXD 193M 1.3 Absolute m

14、aximum ratings. 1/ Supply voltage (VDD) . -0.3 V dc to +18 V dc 2/ Differential input voltage (VID) 18 V dc 3/ Input voltage range (VI) -0.3 V dc to VDDOutput voltage (VO) . -0.3 V dc to VDDInput current (II) 5 mA Output current (IO) (each output) . +20 mA Total supply current into VDDterminal . +40

15、 mA Total supply current out of ground terminal +40 mA Continuous total power dissipation (PD): Case P . 1050 mW 4/ Case X . 725 mW 4/ Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) . +260C 1.4 Recommended operating conditions. Supply voltage (VDD) +4 V dc min to +1

16、6 V dc max Common mode input voltage (VIC) 0 V dc min to VDD 1.5 V dc max Low level output current (IOL) +20 mA max Operating free-air temperature (TA) . -55C min to +125C max 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and

17、handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stres

18、ses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All voltage values except differential voltages are with respect to network ground. 3/ Differential voltages are at the non-inve

19、rting input terminal with respect to the inverting input terminal. 4/ Above +25C, derate at a factor of 8.4 mW/C for case P and derate at a factor of 5.8 mW/C for case X. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S

20、IZE A 5962-95551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDB

21、OOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 1911

22、1-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of documents are the issues of the documents cited in the solicitation. ELECTRONICS INDUSTRIES ALLIANCE (EIA) JEP 95 - Registered and

23、Standard Outlines for Semiconductor Devices (Copies of this document are available online at www.jedec.org/ or from the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the refe

24、rences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes N, Q, and V shall be

25、 in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordan

26、ce with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes N, Q, and V or MIL-PRF-38535, appendi

27、x A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Un

28、less otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups speci

29、fied in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limita

30、tions, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes N, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-P

31、RF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes N, Q, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo repro

32、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For device classes N, Q, and V, a certificate of complia

33、nce shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2

34、 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes N, Q, and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MI

35、L-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes N, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification

36、 of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and

37、 the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this dr

38、awing shall be in microcircuit group number 50 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes N, Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM)

39、 plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes N, Q, and V, screening shall be in accordance with M

40、IL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional crit

41、eria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D . The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall spe

42、cify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classe

43、s N, Q, and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manu

44、facturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in metho

45、d 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. Provided by IHSNot for ResaleNo reproduction or ne

46、tworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95551 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C unless othe

47、rwise specified Group A 2/ subgroups Device type Limits Unit Min MaxInput offset voltage 3/ VIOVICR= 0 to VDD 1 V, VDD= 5 V to 10 V 1 All 5 mV VICR= 0 to VDD 1.5 V, VDD= 5 V to 10 V 2,3 10 Input offset current IIOVIC= 2.5 V 2 All 15 nA Input bias current IIBVIC= 2.5 V 2 All 30 nA Common-mode input v

48、oltage range VICR1 All 0 to VDD 1 V 2,3 0 to VDD 1.5 Low level output voltage VOLVID= -1 V, IOL= 6 mA 1 All 400 mV 2 800 High-level output current IOHVID= 1 V, VOH= 5 V 1 All 40 nA 2 1 A Supply current (both comparators) IDDNo load, outputs low 1 All 40 A 2,3 90 1/ VDD= 5 V, and zero common-mode input voltage. 2/ All subgroups 3 (-55C) test limits are guaranteed but not tested. 3/ The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V with a 2.5 k load to VDD. Provided by IHSNot for ResaleNo reproduction or networking permitted w