DLA SMD-5962-94695 REV D-2005 MICROCIRCUIT LINEAR 3 AMP NEGATIVE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《3安培阴性的低电压调节器硅单片电路线型微电路》.pdf
《DLA SMD-5962-94695 REV D-2005 MICROCIRCUIT LINEAR 3 AMP NEGATIVE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《3安培阴性的低电压调节器硅单片电路线型微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-94695 REV D-2005 MICROCIRCUIT LINEAR 3 AMP NEGATIVE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《3安培阴性的低电压调节器硅单片电路线型微电路》.pdf(12页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -ro 02-02-20 R. MONNIN B Make change from VOUT= VREFto VOUT= 5 V to footnote 1/ in table I. Add VOUT= VREFto conditions column for IQin table I. -rrp 04-10-18 R. MONNIN C Make correction to the tes
2、t name in table I from “Thermal resistance” to “Thermal regulation”. -rrp 04-11-18 R. MONNIN D Make change to the min limit for dimension “e” on case outline X in figure 1.-rrp 05-04-25 R. MONNIN REV SHET REV SHET REV STATUS REV B B B B B C D B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A
3、PREPARED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, 3 AMP, NEGATIVE, LOW DROPOUT VOLTAG
4、E REGULATOR, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-11-21 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-94695 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E248-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license f
5、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) an
6、d space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following exa
7、mple: 5962 - 94695 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 s
8、pecified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identi
9、fy the circuit function as follows: Device type Generic number Circuit function 01 1185 Negative low dropout regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Ve
10、ndor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
11、 Outline letter Descriptive designator Terminals Package style X See figure 1 4 Flange mount style 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networkin
12、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage . 35 V Input-Output differential 30 V VFBvoltage . 7 V VREFv
13、oltage 7 V Power dissipation (PD) 25 W Output voltage 30 V Output reverse voltage 2 V Lead temperature (soldering, 10 seconds) . +300C Operating junction temperature range (TJ): Control section -55C to +150C Power transistor section -55C to +175C Storage temperature range . -65C to +150C Thermal res
14、istance, junction-to-case (JC): TO-3 control area 1C/W Power transistor 3C/W Thermal resistance, junction-to-ambient (JA) 35C/W 1.4 Recommended operating conditions. Ambient temperature range . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The followin
15、g specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, Gen
16、eral Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit
17、Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between
18、 the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damag
19、e to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43
20、218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The mo
21、dification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimen
22、sions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal
23、 connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I an
24、d shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed i
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