DLA SMD-5962-93156 REV B-2000 MICROCIRCUIT HYBRID MEMORY DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 8-BIT《128K X 8位静态随机存取存储器 氧化物半导体记忆混合微型电路》.pdf

《DLA SMD-5962-93156 REV B-2000 MICROCIRCUIT HYBRID MEMORY DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 8-BIT《128K X 8位静态随机存取存储器 氧化物半导体记忆混合微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-93156 REV B-2000 MICROCIRCUIT HYBRID MEMORY DIGITAL STATIC RANDOM ACCESS MEMORY CMOS 128K X 8-BIT《128K X 8位静态随机存取存储器 氧化物半导体记忆混合微型电路》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Added Case outline Y. Changes to table I. 96-04-19 K. A. CottongimB Added note to paragraph 1.2.2 and table I to regarding the 4 transistordesign. Added thermal resistance ratings for all case outlines toparagraph 1.3. Editorial changes throughout

2、. -sld00-07-10 Raymond MonninREVSHEETREV B B BSHEET 15 16 17REV STATUS REV B B B B B B B B B B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Steve L. Duncan DEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUIT DRAWINGCHECKED BYMichael C. JonesPOST OFFICE BOX 3990COLUMBUS,

3、 OHIO 43216-5000THIS DRAWING ISAVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYKendall A. Cottongim MICROCIRCUIT, HYBRID, MEMORY, DIGITAL,STATIC RANDOM ACCESS MEMORY, CMOS,128K x 8-BITAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-04-01AMSC N/A REVISION LEVELBSIZEACAGE CODE67268 5962

4、-93156SHEET 1 OF 17DSCC FORM 2233APR 97 5962 -E281 -00DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER

5、COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G(lowered high reliability), class H (high reliability), and class K, (highest reliability)

6、and a choice of case outlines and lead finishes areavailable and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levelsare reflected in the PIN.1.2 PIN . The PIN shall be as shown in the following example:5962 - 93156 01 H X X Federal R

7、HA Device Device Case Leadstock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 Radiation hardness assurance (RHA) designator . RHA marked devices shall meet the MIL-PRF-38534 specified RHAlevels and s

8、hall be marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) shall identify the circuit function as follows:Device type 1 / Generic number Circuit function Access time01 WS-128K8-120CQ SRAM, 128K x 8-bit 120 ns02 WS-128K8-100CQ

9、 SRAM, 128K x 8-bit 10 0 ns03 WS-128K8-85CQ SRAM, 128K x 8-bit 85 ns04 WS-128K8-70CQ SRAM, 128K x 8-bit 70 ns05 WS-128K8-55CQ SRAM, 128K x 8-bit 55 ns06 WS-128K8-45CQ SRAM, 128K x 8-bit 45 ns07 WS-128K8-35CQ SRAM, 128K x 8-bit 35 ns08 WS-128K8-25CQ SRAM, 128K x 8-bit 25 ns1.2.3 Device class designat

10、or . This device class designator shall be a single letter identifying the product assurance level asfollows:Device class Device performance documentationD, E, G, H, or K Certification and qualification to M IL -PRF -385341.2.4 Case outline(s) . The case outline(s) shall be as designated in MIL -STD

11、-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX 2 / See figure 1 32 Dual-in -line, dual cavityY See figure 1 32 Dual-in-line, single cavity1.2.5 Lead finish . The lead finish shall be as specified in MIL-PRF-38534.1 / Due to the nature of the 4 transistor design o

12、f the die in these device types, topologi cally pure testing is important,particularly for high reliability applications. The device manufacturer should be consulted concerning their testingmethods and algorithms.2 / The case outline X is no longer available.Provided by IHSNot for ResaleNo reproduct

13、ion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 /Supply voltage range (V CC ) -0.5 V dc to +7.0 V dcSignal voltage ran

14、ge (any pin) -0.5 V dc to +7.0 V dcPower dissipation (P D ) 1 WThermal resistance, junction- to case ( JC ):Case outline X . 6.40 C/WCase outline Y . 7.57 C/WStorage temperature range -65 C to +150 CLead temperature (soldering, 10 seconds) +300 C1.4 Recommended operating conditions .Supply voltage r

15、ange (V CC ) +4.5 V dc to +5.5 V dcInput low voltage range (V IL ) -0.5 V dc to +0.8 V dcInput high voltage range (V IH ) +2.2 V dc to V CC +0.3 V dcOutput low voltage, maximum (V OL ) . +0.4 V dcOutput high voltage, minimum (V OH ) +2.4 V dcCase operating temperature range (T C ) -55 C to +125 C2.

16、APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issueof the Department of De

17、fense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL -PRF -38534 - Hybrid Microcircuits, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-1835 - I

18、nterface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL -HDBK -103 - List of Standard Microcircuit Drawings (SMD s).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Sta

19、ndardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersede

20、s applicable laws and regulations unless a specificexemption has been obtained.1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.Provided by IHSNot for ResaleNo reproduction

21、or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET4DSCC FORM 2234APR 973. REQUIREMENTS3.1 Item requirements . The individual item performance requirements for device classes D, E

22、, G, H, and K shall be inaccordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the performance of all tests herein or asdesignated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. Therefore, the tests and inspections herein

23、 may not be performed for the applicable device class (see MIL-PRF-38534). Furthermore, the manufacturers may take exceptions or use alternate methods to the tests and inspections herein and not performthem. However, the performance requirements as defined in MIL-PRF-38534 shall be met for the appli

24、cable device class.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specified inMIL-PRF-38534 and herein.3.2.1 Case outline(s) . The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.3.2.2 Terminal connections . The

25、 terminal connections shall be as specified on figure 2.3.2.3 Truth table(s) . The truth table(s) shall be as specified on figure 3.3.2.4 Timing diagram(s) . The timing diagram(s) shall be as specified on figures 4 and 5.3.2.5 Block diagram . The block diagram shall be as specified on figure 6.3.2.6

26、 Output load circuit . The output load circuit shall be as specified on figure 7.3.3 Electrical performance characteristics . Unless otherwise specified herein, the electrical performance characteristics are asspecified in table I and shall apply over the full specified operating temperature range.3

27、.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electrical testsfor each subgroup are described in table I.3.5 Marking of device(s) . Marking of device(s) shall be in accordance with MIL -PRF -38534. The device shall be marked with

28、 thePIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked.3.6 Data . In addition to the general performance requirements of MIL -PRF -38534, the manufacturer of the device describedherein shall maintain the electrical test data (variables format) from the ini

29、tial quality conformance inspection group A lot sample, foreach device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, ifany, are guaranteed. This data shall be maintained under document revision level control by the manufacturer an

30、d be madeavailable to the preparing activity (DSCC-VA) upon request.3.7 Certificate of compliance . A certificate of compliance shall be required from a manufacturer in order to supply to this drawing.The certificate of compliance (original copy) submitted to DSCC -VA shall affirm that the manufactu

31、rers product meets theperformance requirements of MIL -PRF -38534 and herein.3.8 Certificate of conformance . A certificate of conformance as required in MIL -PRF -38534 shall be provided with each lot ofmicrocircuits delivered to this drawing.4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspecti

32、on . Sampling and inspection procedures shall be in accordance with MIL -PRF -38534 or as modifiedin the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, orfunction as described herein.Provided by IHSNot for ResaleNo reproduction or n

33、etworking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .LimitsTest Symbol Conditions 1 / 2 /-55 C T C +125 CV SS = 0 V

34、 dc+4.5 V dc V CC +5.5 V dcunless otherwise specifiedGroup AsubgroupsDevicetypesMin MaxUnitDC PARAMETERS01-04 30Supply current I CCCS = V IL , OE = V IH , dutycycle = 1/t RC ,V CC = +5.5 V dc 1,2,305-08 110mA01,02 0.603,04 1.0Standby current I SBCS = V CC , OE = V IH , dutycycle = 1/t RC ,V CC = +5.

35、5 V dc1,2,305-08 15mAInput leakage current I LI V CC = +5.5 V dc,V IN = GND or V CC1,2,3 All 15 AOutput leakage current I LOCS = V IH , OE = V IH ,V OUT = GND to V CC ,V CC = +5.5 V dc1,2,3 All 15 AInput low voltage V IL 1,2,3 All 0.8 VInput high voltage V IH 1,2,3 All 2.2 VDevice types 01 through 0

36、6,I OL = +2.1 mA, V CC = +4.5 VdcOutput low voltage V OLDevice types 07 and 08,I OL = +8.0 mA, V CC = +4.5 Vdc1,2,3 All 0.4VDevice types 01 through 06,I OH = -1.0 mA, V CC = +4.5 VdcOutput high voltage V OHDevice types 07 and 08,I OH = -4.0 mA, V CC = +4.5 Vdc1,2,3 All 2.4VSee footnotes at end of ta

37、ble.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continue

38、d.LimitsTest Symbol Conditions 1 / 2 /-55 C T C +125 CV SS = 0 V dc+4.5 V dc V CC +5.5 V dcunless otherwise specifiedGroup AsubgroupsDevicetypesMin MaxUnitDATA RETENTIONData retention supplyvoltageV DRCS V CC - 0.2 V dc 1,2,3 All 2.0 5.5 V01-050.406 0.9Data retention current I CCDR V CC = 3.0 V dc 1

39、,2,307,08 3.5mACAPACITANCEInput capacitance 3 / C IN V IN =0 V dc, f = 1 MHz 4 All 40 pFOutput capacitance 3 / C OUT V OUT = 0 V dc, f = 1 MHz 4 All 40 pFFUNCTIONAL TESTINGFunctional tests See 4.3.1c 7,8A,8B AllREAD CYCLE AC TIMINGRead cycle time t RC See figure 4 9,10,11 010203040506070812010085705

40、5453525 nsSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET7DSCC FORM 2234APR 97TABLE I. Electrical pe

41、rformance characteristics - Continued.LimitsTest Symbol Conditions 1 / 2 /-55 C T C +125 CV SS = 0 V dc+4.5 V dc V CC +5.5 V dcunless otherwise specifiedGroup AsubgroupsDevicetypesMin MaxUnitREAD CYCLE AC TIMING - Continued.Address access time t AA See figure 4 9,10,11 010203040506070812010085705545

42、3525ns01-04 5Output hold from addresschanget OH See figure 4 9,10,1105-08 0nsChip select access time t ACS See figure 4 9,10,11 0102030405060708120100857055453525 nsOutput enable to outputvalidt OE See figure 4 9,10,11 01020304050607086050453530252015nsChip select to output inlow impedence t CLZ See

43、 figure 4 9,10,11 01-0405-0853nsOutput enable to output inlow impedencet OLZ See figure 4 9,10,11 01-0405-0850nsSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY C

44、ENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET8DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.LimitsTest Symbol Conditions 1 / 2 /-55 C T C +125 CV SS = 0 V dc+4.5 V dc V CC +5.5 V dcunless otherwise specifiedGroup AsubgroupsDevicetypesMin MaxUnitREAD CY

45、CLE AC TIMING - Continued.Chip select to outputin high impedence t CHZ See figure 4 9,10,11 01,0203,0405-070835252012nsOutput enable to outputin high impedence t OHZ See figure 4 9,10,11 01,0203,0405-070835252012nsWRITE CYCLE AC TIMINGAddress setup time t AS See figure 5 9,10,11 All 0 nsWrite cycle

46、time t WC See figure 5 9,10,11 0102030405060708120100857055453525nsWrite pulse width t WP See figure 5 9,10,11 01020304050607088070555045302520nsWrite recovery time t WR See figure 5 9,10,11 All 2 nsWrite enable to outputin low impedancet WLZ See figure 5 9,10,11 01-0304-0853nsWrite enable to output

47、in high impedancet WHZ See figure 5 9,10,11 01,0203-05060708000003530252015nsSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-93156DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-

48、5000REVISION LEVELBSHEET9DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.LimitsTest Symbol Conditions 1 / 2 /-55 C T C +125 CV SS = 0 V dc+4.5 V dc V CC +5.5 V dcunless otherwise specifiedGroup AsubgroupsDevicetypesMin MaxUnitWRITE CYCLE AC TIMING - Continued.Data valid to end of write t DW See figure 5 9,10,11 0102,040305,060708504035252015nsData hold time t DH See figure 5 9,10,1