DLA SMD-5962-93121 REV B-2003 MICROCIRCUIT LINEAR +5 V ADJUSTABLE STEP-DOWN CURRENT-MODE PWM REGULATOR MONOLITHIC SILICON《硅单片 加减5伏特可调降压电流方式脉宽调制 线性微型电路》.pdf
《DLA SMD-5962-93121 REV B-2003 MICROCIRCUIT LINEAR +5 V ADJUSTABLE STEP-DOWN CURRENT-MODE PWM REGULATOR MONOLITHIC SILICON《硅单片 加减5伏特可调降压电流方式脉宽调制 线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-93121 REV B-2003 MICROCIRCUIT LINEAR +5 V ADJUSTABLE STEP-DOWN CURRENT-MODE PWM REGULATOR MONOLITHIC SILICON《硅单片 加减5伏特可调降压电流方式脉宽调制 线性微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes were made to the conditions of the output voltage, VOUT, in table I. Update boilerplate. -rrp 98-11-25 R. MONNIN B Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. -gt 03-12-12 R. MONNIN REV SHET REV SHET REV STATUS REV
2、B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A
3、. Frye MICROCIRCUIT, LINEAR, +5 V / ADJUSTABLE STEP-DOWN CURRENT-MODE PWM REGULATOR, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-06-08 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-93121 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E073-04 DISTRIBUTION ST
4、ATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93121 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC F
5、ORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number
6、(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93121 01 M P X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (se
7、e 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specifi
8、ed RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX738A +5 V / Adjustable step-down current-mode PWM regulator 1.
9、2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance
10、with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. T
11、he lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93121 DEFENSE SUPPLY CENTER COLUMBUS
12、 COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Pin voltages V+ range . -0.3 V dc to +17 V dc LX range (V+ - 21 V dc) to (V+ + 0.3 V dc) VOUT. 25 V dc SS, SHDN , CC range. -0.3 V dc to (V+ + 0.3 V dc) Peak switch current (ILX). 2.0 A Referen
13、ce current (IVREF) 2.5 mA Power dissipation, TA= +70C, derate 8.00 mW/C above +70C. 640 mW Junction temperature (TJ) . +175C Storage temperature range -65C to +150C Lead temperature range (soldering, 10 seconds) . +300C Thermal resistance: Junction-to-case (JC) +55C/W Junction-to-ambient (JA) . +125
14、C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to 125C Input voltage range 6.0 V to 16.0 V 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the
15、 extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integra
16、ted Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-H
17、DBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may ca
18、use permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93121 DEFENSE SUPPLY CENTER COLUMBU
19、S COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws an
20、d regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. T
21、he modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical
22、dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal c
23、onnections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteris
24、tics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined
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