DLA SMD-5962-93003 REV C-2006 MICROCIRCUIT LINEAR DUAL OPERATIONAL AMPLIFIER WITH DUAL COMPARATORS AND VOLTAGE REFERENCE MONOLITHIC SILICON《硅单片 装有双通道比较器及电压基准的双重运算放大器 线性微型电路》.pdf

《DLA SMD-5962-93003 REV C-2006 MICROCIRCUIT LINEAR DUAL OPERATIONAL AMPLIFIER WITH DUAL COMPARATORS AND VOLTAGE REFERENCE MONOLITHIC SILICON《硅单片 装有双通道比较器及电压基准的双重运算放大器 线性微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-93003 REV C-2006 MICROCIRCUIT LINEAR DUAL OPERATIONAL AMPLIFIER WITH DUAL COMPARATORS AND VOLTAGE REFERENCE MONOLITHIC SILICON《硅单片 装有双通道比较器及电压基准的双重运算放大器 线性微型电路》.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changed paragraph 3.1 and 3.5.1. Added vendor CAGE 0C7V7. Updated boiler plate. lgt 00-04-26 R. MONNIN B Make change to output voltage swing low test as specified in table I. - ro 01-11-13 R. MONNIN C Drawing updated to reflect current requiremen

2、ts. - ro 06-02-06 R. MONNIN REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH R. PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla

3、.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-04-15 MICROCIRCUIT, LINEAR, DUAL OPERATIONAL AMPLIFIER WITH DUAL COMPARATORS AND VOLTAGE REFERENCE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SI

4、ZE A CAGE CODE 67268 5962-93003 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E112-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C

5、 SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Iden

6、tifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93003 01 M E X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCa

7、se outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appe

8、ndix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM613 Dual operational amplifier with dual comparat

9、ors and adjustable reference 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level

10、 B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16

11、 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

12、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage on any pin except VR(referred to -VSpin) 36 V (maximum) 2/ -0.3 V (minimum) 3/ Current on any input pin and

13、 VRpin 20 mA Differential input voltage (VIND) . 36 V Storage temperature range -65C to +150C Junction temperature (TJ) +150C Soldering temperature (10 seconds) +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) . 100C/W 1.4 Recommended oper

14、ating conditions. Ambient operating temperature (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues

15、of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard E

16、lectronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the

17、Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supe

18、rsedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Input voltage above +VSis allowe

19、d. As long as one input pin voltage remains inside the common mode range, the comparator will deliver the correct output. 3/ It is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled to a diode drop below -VS, a parasitic NPN transistor

20、 turns on. No latch up will occur as long as current through that pin remains below the maximum rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

21、NDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spe

22、cified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JA

23、N class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case ou

24、tlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance c

25、haracteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup a

26、re defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the

27、“5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The

28、 certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be require

29、d from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certif

30、icate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A

31、and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class

32、M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity reta

33、in the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircu

34、it group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 9

35、7 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Supply voltage range VS1 01 2.8 36 V 2,3 3 36 Total supply current IS+VS= 4 V to 36 V, 1 01 940 A RL= 2,3 1000 Operational amplif

36、ier section Offset voltage over supply voltage VIO1+VS= 4 V to 36 V 1 01 -3.5 3.5 mV 2,3 -6.0 6.0 Offset voltage over common mode voltage VIO2+VS= 30 V, -VS= 0 V, VCM= 0 V to +VS- 1.4 V 1 01 -3.5 3.5 mV +VS= 30 V, -VS= 0 V, VCM= 0 V to +VS- 1.8 V 2,3 -6.0 6.0 Input bias current IIB1 01 -25 25 nA 2,3

37、 -30 30 Input offset current IIO1 01 -4 4 nA 2,3 -5 5 Common mode rejection ratio CMRR +VS= 30 V, VCM= 0 V to +VS-1.4 V, 20 log(VCM/VIO) 1 01 80 dB +VS= 30 V, VCM= 0 V to +VS-1.8 V, 20 log(VCM/VIO) 2,3 75 Power supply rejection ratio PSRR +VS= 4 V to 30 V, VCM= +VS/ 2, 1 01 80 dB 20 log(+VS/VOS) 2,3

38、 75 Output source current IOUT+VS= 0 V, -VS= 0.3 V, 1 01 20 mA VOUT= +VS= -2.5 V 2,3 13 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLU

39、MBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Operational amplifier section - continued. Output

40、sink current ISK+VS= 0 V, -VS= 0.3 V, 1 01 14 mA VOUT= 1.6 V 2,3 8 Short circuit current ISHT+VS= 3 V, -VS= 2 V, 1 01 50 mA VOUT= 0 V, source 2,3 60 +VS= 2 V, -VS= 3 V, 1 60 VOUT= 5 V, sink 2,3 80 Output voltage swing high VO1+VS= 36 V, RL= 10 k to GND 4 01 +VS-1.7 V 5,6 +VS-1.9 Output voltage swing

41、 low VO2+VS= 36 V, RL= 10 k to +VS4 01 -VS+0.9 V 5,6 -VS+1.2 AV+VS= 30 V, RL= 10 k, 4 01 100 V/mV Open loop voltage gain VOUT= 5 V to 25 V 5,6 40 Slew rate SR +VS= 30 V 3/ 4 01 0.55 V/s 5, 6 0.45 Voltage reference section Voltage reference 4/ VREF1 01 1.2365 1.2515 V Voltage reference 5/ change with

42、 current REFREFIVVREF(100 A) - VREF(17 A) 1 01 -1 1 mV 2,3 -1.1 1.1 VREF(10 mA) - VREF(100 A) 1 -5 5 2,3 -5.5 5.5 Resistance 6/ R mA 9.9A)100 tomA (10VREF 1 01 .51 2,3 .56 A84A)17 -A (100VREF1 12 2,3 13 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitte

43、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise

44、 specified Group A subgroups Device type Limits 2/ Unit Min Max Voltage reference section - continued. ROREFVVVREF(+VS= 5 V) - VREF(VRO= 6.3 V), 1 01 7 mV Voltage reference change with high reference output voltage (5.06 V between anode and FEEDBACK pin) 2,3 10 Voltage reference change positive supp

45、ly voltage change SREFVV+VREF(+VS= 5 V) - VREF(+VS= 36 V) 1 01 -1.2 1.2 mV 2,3 -1.3 1.3 VREF(+VS= 5 V) - VREF(+VS= 3 V) 1 -1 1 2,3 -1.5 1.5 IFBVFB= VANODE 5.06 V 1 01 35 nA FEEDBACK bias current 2,3 40 Comparator section VIO1+VS= 4 V to 36 V, 1 01 -3.0 3.0 mV Offset voltage over positive supply volt

46、age range RL= 15 k 2,3 -6.0 6.0 Offset voltage over common mode voltage range VIO2VCM= 0 V - (+VS- 1.4 V), RL= 15 k, +VS= 30 V 1 01 -3.0 3.0 mV VCM= 1 V - (+VS- 1.8 V), RL= 15 k, +VS= 30 V 2,3 -6.0 6.0 Input bias current IIB1 01 -25 +25 nA 2,3 -30 +30 Input offset current IIO1 01 -4 +4 nA 2,3 -5 +5

47、Output sink current ISKV+IN= 0 V, VOUT= 1.5 V 1 01 10 mA 2,3 8 V-IN= 1 V, VOUT= 0.4 V 1 1 2,3 0.5 Output leakage current ILKV+IN= 1 V, V-IN= 0 V, VOUT= 36 V, TA= +25C 1 01 10 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

48、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93003 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. 1/ Unless otherwise specified, +VS= 5 V, -VS= GND = 0 V, VCM= VOUT= +VS/ 2, current reference (IR) = 100 A, and FEEDBACK pin is shorted to ground. 2/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is