DLA SMD-5962-91763 REV B-2005 MICROCIRCUIT LINEAR LOGARITHMIC AMPLIFIER MONOLITHIC SILICON《硅单块 对数放大器 直线式微型电》.pdf

《DLA SMD-5962-91763 REV B-2005 MICROCIRCUIT LINEAR LOGARITHMIC AMPLIFIER MONOLITHIC SILICON《硅单块 对数放大器 直线式微型电》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91763 REV B-2005 MICROCIRCUIT LINEAR LOGARITHMIC AMPLIFIER MONOLITHIC SILICON《硅单块 对数放大器 直线式微型电》.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to rise time test as specified in table I. 97-08-28 R. MONNIN B Replace reference to MIL-STD-973 with reference to MIL-PRF-38535. - ro 05-02-17 R. MONNIN REV SHET REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4

2、 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, L

3、OGARITHMIC AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-01-21 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91763 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E109-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without

4、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q

5、and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the follo

6、wing example: 5962 - 91763 01 Q E X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF

7、-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s

8、) identify the circuit function as follows: Device type Generic number Circuit function 01 TL441AM Logarithmic amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M

9、Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follow

10、s: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provid

11、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Positive supply voltage

12、 (+VCC) . +8.0 V dc 2/ Negative supply voltage (-VCC) -8.0 V dc 2/ DC input voltage (VIN) . +6.0 V dc 2/ DC output sink current (any one output) (IO) . +30 mA Maximum continuous power dissipation (PD) 500 mW 3/ Storage temperature range (TSTG) . -65C to +150C Lead temperature, soldering 1.6 mm (1/16

13、 inch) from case for 60 seconds: Case E . +300C Case temperature, soldering for 60 seconds: Case 2 . +260C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Positive supply voltage (+VCC) . +6.0 V dc Negative supply v

14、oltage (-VCC) -6.0 V dc Peak-to-peak input voltage range for each 30 dB stage (VIN(P-P) +0.01 V dc to +1 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks

15、 form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEF

16、ENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are

17、available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the referen

18、ces cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at th

19、e maximum levels may degrade performance and affect reliability. 2/ All voltages, except differential output voltages are with respect to network ground terminal. 3/ With TAabove 104C, derate at a factor of 11 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

20、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF

21、-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appe

22、ndix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class

23、 M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagrams. The logic diagrams shall be as specified on figure 2. 3.3 Electrical performance characteristics and post

24、irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requir

25、ements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number

26、is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M sh

27、all be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certif

28、icate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in orde

29、r to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of M

30、IL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each

31、 lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and revi

32、ew for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignm

33、ent for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE S

34、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min MaxDifferential output offset voltage VO

35、DSee figure 3 1 01 70 mV 2,3 100 Quiescent output voltage VOSee figure 4 1 01 5.45 5.85 V 2,3 5.30 5.85 DC scale factor (differential output), each 30 dB stage, -35 dBV to 5 dBV SFDCSee figure 5 1,2,3 01 7 11 mV/dB DC error at 20 dBV (midpoint of 35 dBV to ERRDCSee figure 5 1 01 2.6 dB -5 dBV range)

36、 2 3.0 3 4.0 Supply current from +VCC+ICCSee figure 4 1 01 14.5 23 mA 2,3 10 31 Supply current from -VCC-ICCSee figure 4 1 01 -6 -10.5 mA 2,3 -4.5 -15 Power dissipation PDSee figure 4 1 01 123 201 mW 2,3 87 276 Rise time 3/ tRMeasured from 10% to 90% points, CL= 24 pF, TA= +25C, see figure 6 9 01 35

37、 ns 1/ Unless otherwise specified, +VCC= +6 V and VCC= -6 V. 2/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to th

38、e limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type

39、01 Case outlines E 2 Terminal number Terminal symbol 1 COMP A2 NC 2 -VCCCOMP A2 3 COMP A2 -VCC4 INPUT A1 COMP A2 5 OUTPUT Y INPUT A1 6 OUTPUT Y NC 7 INPUT A2 OUTPUT Y 8 +VCCOUTPUT Y 9 INPUT B2 INPUT A2 10 OUTPUT Z +VCC 11 OUTPUT Z NC 12 INPUT B1 INPUT B2 13 GND OUTPUT Z 14 COMP B2 OUTPUT Z 15 COMP B

40、2 INPUT B1 16 NC NC 17 - GND 18 - COMP B2 19 - COMP B2 20 - NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

41、 OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 NOTE: Y log A1 + log A2; Z log B1 + log B2 where; A1, A2, B1, and B2 are in dBV, 0 dBV = 1 V. CA2, CA2, CB2, and CB2are detector compensation inputs. FIGURE 2. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking pe

42、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 FIGURE 3. Differential output offset voltage test circuit. NOTE: PD= ( +VCCx +ICC) + ( -VCCx -ICC) FIGURE 4. Ou

43、tput voltage and supply current test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 Scal

44、e Factor VOUT(560 mV) VOUT(18 mV) mV / 30 dB Error = |VOUT(100 mV) 0.5 VOUT(560 mV) 0.5 VOUT(18 mV)| / Scale factor FIGURE 5. Scale factor and error test circuit. Notes: 1. The input pulse has the following characteristics: tW= 200 ns, tR 2 ns, tF 2 ns, and PRR 10 MHz. 2. Capacitor C1consists of thr

45、ee capacitors in parallel: 1 F, 0.1 F, and 0.01 F. 3. CLincludes probe and jig capacitance. FIGURE 6. Rise time test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91763 DEFENSE SUPPLY CENTER COLUMB

46、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan.

47、The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-3853

48、5, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the p