DLA SMD-5962-91760 REV D-2007 MICROCIRCUIT MEMORY DIGITAL BICMOS ONE TIME PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 一次可编程逻辑设备 双互补金属氧化物半导体 数字主储存器微型电路》.pdf
《DLA SMD-5962-91760 REV D-2007 MICROCIRCUIT MEMORY DIGITAL BICMOS ONE TIME PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 一次可编程逻辑设备 双互补金属氧化物半导体 数字主储存器微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-91760 REV D-2007 MICROCIRCUIT MEMORY DIGITAL BICMOS ONE TIME PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单块 一次可编程逻辑设备 双互补金属氧化物半导体 数字主储存器微型电路》.pdf(21页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Updated document. Added device types 07 thru 10. Added CAGE 18324. Added L package. 94-10-17 M. A. Frye B Added device types 11 thru 14. Added device class N option for some devices. Added X package, represents plastic dual-in-line. Editorial cha
2、nges throughout. 95-12-15 M. A. Frye C Updated parameter fMAX2in table I, added new test ( tCF) for devices 07, 08, 11-14, and added footnote 8/ to table I. Changed the measured value in table IIB. Removed cage 65786 as a source. 96-04-30 M. A. Frye D Boilerplate update, part of 5 year review. ksr 0
3、7-05-24 Robert M. Heber REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Kenneth Rice COLUMBUS, OHI
4、O 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michael Frye DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-01-19 MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON AMSC N/A REVISION L
5、EVEL D SIZE A CAGE CODE 67268 5962-91760 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E315-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91760 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISIO
6、N LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines
7、and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environmen
8、t. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91760 01 M 3 A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes
9、 N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA
10、 device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 22V10G-15 22-input 10-output and-or-logic array 15 ns 02 22V10G-12 22-input 10-output and-or-logic array 12 ns 03 22V10G-10 22-input 10-output and-or
11、-logic array 10 ns 04 22VP10G-15 22-input 10-output and-or-logic array 15 ns 05 22VP10G-12 22-input 10-output and-or-logic array 12 ns 06 22VP10G-10 22-input 10-output and-or-logic array 10 ns 07 22V10A 22-input 10-output and-or-logic array 10 ns 08 22V10B 22-input 10-output and-or-logic array 8.5 n
12、s 09 22V10G-7.5 22-input 10-output and-or-logic array 7.5 ns 10 22VP10G-7.5 22-input 10-output and-or-logic array 7.5 ns 11 22V10A 22-input 10-output and-or-logic array 10 ns 12 22V10A 22-input 10-output and-or-logic array 10 ns 13 22V10B 22-input 10-output and-or-logic array 8.5 ns 14 22V10B 22-inp
13、ut 10-output and-or-logic array 8.5 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN c
14、lass level B microcircuits in accordance with MIL-PRF-38535, appendix A N Certification and qualification to MIL-PRF-38535 with a nontraditional performance environment (encapsulated in plastic) Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or n
15、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91760 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835, JEDEC Publication 95,
16、 and as follows: Outline letter Descriptive designator Terminals Package style Document 3 CQCC1-N28 28 Square leadless chip carrier package MIL-STD-1835 L GDIP3-T24 24 Dual-in-line package MIL-STD-1835 X MS-001 AF 24 Plastic dual-in-line package JEP 95 1.2.5 Lead finish. The lead finish is as specif
17、ied in MIL-PRF-38535 for device classes N, Q, and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range to ground potential (VCC) -0.5 V dc to +7.0 V dc DC voltage range applied to the outputs in the high-Z state -0.5 V dc to +VCCMaximum power di
18、ssipation. 1.045 W 3/ Lead temperature (soldering, 10 seconds). +260C Thermal resistance, junction-to-case (JC): Cases 3 and L . See MIL-STD-1835 Case X. 22C/W Junction temperature (TJ). +175C Storage temperature range (TSTG) . -65C to +150C Temperature (under bias) range -55C to +125C Devices 11-14
19、. -40C to +85C 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc minimum to +5.5 V dc maximum Supply voltage range (VCC) (for devices 07,08,11,12,13,14) +4.75 V dc minimum to +5.25 V dc maximum Ground voltage (GND) . 0 V dc Input high voltage (VIH). 2.0 V dc minimum 4/ Input
20、 low voltage (VIL) 0.8 V dc maximum 4/ Case operating temperature range (TC) . -55C to +125C Case operating temperature range (TC) (for devices 11-14) -40C to +85C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks fo
21、rm a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENS
22、E STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are ava
23、ilable online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil from the Standardization Document Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation
24、at the maximum levels may degrade performance and affect reliability. 2/ All voltages referenced to VSS. 3/ Must withstand the added PDdue to short circuit test; e.g., IOS. 4/ These are absolute values with respect to device ground. Overshoots due to system or tester noise are included. Provided by
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