DLA SMD-5962-91722 REV E-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS 4-BIT PRESETTABLE BINARY COUNTER ASYNCHRONOUS RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R410-97. 97-08-11 Monica L. Poelking B Add Radiation Hardness Assurance limits. Editorial changes throughout. jak 98-04-20 Monica L. Poelking C Add device type 02. Add case outlines X and Z. Add radiation featu

2、res to device type 01. Add Vendor CAGE Code F8859. Update boilerplate to MIL-PRF-38535 requirements. LTG 02-07-18 Thomas M. Hess D Change lead temperature for case outline X in 1.3. Add radiation features to 1.5 for device type 02. Update the boilerplate to include radiation hardness assured require

3、ments for device type 02. Editorial changes throughout. jak 04-12-01 Thomas M. Hess E Update radiation features in section 1.5. Add table IB and paragraphs 4.4.4.1 - 4.4.4.2. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 11-11-17 Thomas M. Hess REV SHET REV E E E E E

4、 E E E E SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS A

5、VAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas J. Ricciuti APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, ASYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL D

6、ATE 92-12-23 REVISION LEVEL E SIZE A CAGE CODE 67268 5962-91722 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E072-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91722 DLA LAND AND MARITIME COLUMBUS, OHIO 4321

7、8-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflec

8、ted in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 91722 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)De

9、vice class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet t

10、he MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 1/ 54ACT161 4-bit presettable

11、 binary counter, asynchronous reset, TTL compatible inputs 02 54ACT161 4-bit presettable binary counter, asynchronous reset, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device req

12、uirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in

13、MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat packZ GDFP1-G16 16 Flat pack with gullwing 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The

14、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Due to internal noise problems, device type 01 does not meet the minimum VIHthreshold limit that is characteristic of this technology family. Provided by IHSNot for ResaleNo re

15、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91722 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc Input v

16、oltage range . -0.5 V dc to VCC + 0.5 V dc 2/ Output voltage range -0.5 V dc to VCC+ 0.5 V dc 2/ DC input diode current (IIK) (-0.5 V VIN VCC+ 0.5 V) 20 mA DC output diode current (IOK) (-0.5 V VOUT VCC+ 0.5 V) 20 mA DC output current (IOUT) (per output pin) 50 mA DC VCCor GND current (ICC, IGND) (p

17、er pin) . 250 mA 3/ Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (T

18、J) +175C 4/ 1.4 Recommended operating conditions. 2/ 5/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V dc Minimum high level input voltage (VIH): Device type 01 3.0

19、V dc 6/ Device type 02 2.0 V dc Case operating temperature range (TC) . -55C to +125C Input edge rate (v/t) maximum (from VIN= 0.8 V to 2.0 V, 2.0 V to 0.8 V) . 125 mV/ns Maximum high level output current (IOH) . -24 mA Maximum low level output current (IOL) . +24 mA 1.5 Radiation features. Device t

20、ype 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 100 Krads (Si) Single Event Latch-up (SEL) occurs at LET (see 4.4.4.2) . 100 MeV-cm2/mg 7/ Device type 02: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single Event Latchup (SEL) occurs at LET (see

21、4.4.4.2) . 93 MeV-cm2/mg 7/ Single Event Upset (SEU) occurs at LET (see 4.4.4.2) 93 MeV-cm2/mg 7/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted

22、, all voltages are referenced to GND. 3/ For packages with multiple VCCand GND pins, this value represents the maximum total current flowing into or out of all VCCand GND pins. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in a

23、ccordance with method 5004 of MIL-STD-883. 5/ Unless otherwise specified, the values listed above shall apply over the full VCCand TCrecommended operating range. 6/ For dynamic operation, a VIHlevel between 2.0 and 3.0 V may be recognized by this device as a high logic level input. For static operat

24、ion, a VIH 2.0 V will be recognized by this device as a high logic level input. Users are cautioned to verify that this will not affect their system. 7/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by th

25、e customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91722 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLI

26、CABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTM

27、ENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK

28、-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2

29、 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JEDEC Standard No. 20 - Standard for

30、Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. JEDEC Standard No. 78 - IC Latch-Up Test. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201).

31、2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENT

32、S 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as

33、described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as spec

34、ified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

35、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91722 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2.

36、 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 State diagram. The state diagram shall be as specified on figure 4. 3.2.6 Ground bounce waveforms and test circuit. The Ground bounce waveforms and test circuit shall be as specified on figure 5. 3.2.7 Switching wavefor

37、ms and test circuit. The switching waveforms and test circuit shall be as specified on figure 6. 3.2.8 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring a

38、ctivity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperat

39、ure range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may

40、 also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V

41、 shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device cl

42、ass M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M,

43、a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affi

44、rm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MI

45、L-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devi

46、ces acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable

47、 required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by I

48、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91722 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 t

49、est method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min MaxPositive input clamp voltage 3022 VIC+5/ 6/ For input under test, IIN= 1.0 mA All Q, V 0.0 V 1 0.4 1.5 V M, D, P, L, R 01 V 0.0 V 1 0.4