DLA SMD-5962-91693 REV C-2001 MICROCIRCUIT LINEAR QUAD LOW POWER OPERATIONAL AMPLIFIER MONOLITHIC SILICON《硅单块 操作放大器低功率四倍直线式微型电路》.pdf
《DLA SMD-5962-91693 REV C-2001 MICROCIRCUIT LINEAR QUAD LOW POWER OPERATIONAL AMPLIFIER MONOLITHIC SILICON《硅单块 操作放大器低功率四倍直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-91693 REV C-2001 MICROCIRCUIT LINEAR QUAD LOW POWER OPERATIONAL AMPLIFIER MONOLITHIC SILICON《硅单块 操作放大器低功率四倍直线式微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with N.O.R. 5962-R023-95. 94-10-28 M. A. FRYEB Changes in accordance with N.O.R. 5962-R195-95. 95-08-25 M. A. FRYEC Make changes to Small signal bandwidth and Gain flatness rolloff tests asspecified in table I herein. - ro01-05
2、-04 R. MONNINREVSHEETREVSHEETREV STATUS REV CCCCCCCCCCCCOF SHETS SHET 12345678910112PMIC N/A PREPARED BY RICK C. OFFICERDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCHARLES E. BESORECOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPR
3、OVED BYMICHAEL A. FRYEMICROCIRCUIT, LINEAR, QUAD, LOW POWER,OPERATIONAL AMPLIFIER, MONOLIHTICAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE93-01-21SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-91693SHEET1 OF 12DSCC FORM 2233APR 97 5962-E378-01DISTRIBUTION STATEMENT A. Approved
4、 for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91693DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scop
5、e. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of
6、Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 91693 01 M C X Federal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (s
7、ee 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the app
8、ropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 CLC414 Quad, low power, operational amplifier1.2.3 Device class designator. The device class designator is a
9、single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualificatio
10、n to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleC GDIP1-T14 or CDIP2-T14 14 Dual-in-line2 CQCC1-N20 20 Square leadless chip carrier1.2.5 Lead finish. The lead finish is as speci
11、fied in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91693DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION
12、 LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage (VS) .7 V dcOutput current (IOUT) 70 mACommon mode input voltage (VCM) VSDifferential input voltage (VID) .10 VPower dissipation (PD) 1.2 WLead temperature (soldering, 10 seconds) .+300CJunction temperature (TJ) .+175CSt
13、orage temperature range .-65C to +150CThermal resistance, junction-to-case (JC) .See MIL-STD-1835Thermal resistance, junction-to-ambient (JA):Case C .75C/WCase 2 .65C/W1.4 Recommended operating conditions.Supply voltage (VS) .5 V dcGain range (AV) .1 to 10Ambient operating temperature range (TA) .-5
14、5C to +125C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Dep
15、artment of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcir
16、cuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are availabl
17、e from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.Provided by IHSN
18、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-91693DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 972.2 Order of precedence. In the event of a conflict between the text of this dr
19、awing and the references cited herein, the tex tof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and
20、 V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in
21、accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, append
22、ix A and herein for device class M.3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.3 Electrical performance characteristics and post irradiation parameter limits. Unless other
23、wise specified herein, theelectrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over thefull ambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in t
24、able II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due t
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