DLA SMD-5962-91535 REV B-2010 MICROCIRCUIT LINEAR HIGH SLEW RATE WIDEBAND OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to the slew rate test minimum group A subgroup 4 limit from 850 V/s to 750 V/s. Change the footnote 2/ description to; “Rise time measurement of 25 percent to 75 percent with VOUT= 200 mV”. Changes in accordance with N.O.R. 5962-R068-

2、93. 93-02-02 M. A. FRYE B Update boilerplate paragraphs to current MIL-PRF-38535 requirements. Redrawn - ro 10-04-05 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DOCUMENT HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED

3、 BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINE

4、AR, HIGH SLEW RATE, WIDEBAND OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-02-08 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91535 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E247-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

5、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and s

6、pace application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example

7、: 5962 - 91535 01 M C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specif

8、ied RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify th

9、e circuit function as follows: Device type Generic number Circuit function 01 EL2038 High slew rate, wideband operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements docum

10、entation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 an

11、d as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device clas

12、s M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage betw

13、een +V and -V 35 V Differential input voltage . 6 V Output current : Peak 50 mA Continuous 30 mA Power dissipation (PD) 5.10 mW Junction temperature (TJ) . +175C Lead temperature (soldering, 5 seconds) +300C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) : Case C

14、 . +35C/W Case 2 +53C/W Thermal resistance, junction-to-ambient (JA) : Case C . +86C/W Case 2 +98C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 15 V Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbook

15、s. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Man

16、ufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standar

17、d Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of

18、this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the devi

19、ce. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI

20、SION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in

21、 the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The de

22、sign, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The termin

23、al connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the f

24、ull ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In additi

25、on, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marki

26、ng for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The

27、compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1

28、herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawin

29、g shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q

30、 and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices ac

31、quired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore docume

32、ntation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or netwo

33、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C Group A subgroups

34、Device type Limits Unit VS= 15 V, RL= 1 k unless otherwise specified Min Max Input offset voltage VIOVCM= 0 V 1 01 2 mV 2,3 6 Input bias current IIBVCM= 0 V 1 01 15 A 2,3 20 Input offset current IIOVCM= 0 V 1 01 4 A 2,3 6 Common mode voltage range VCM1,2,3 01 11 V Large signal voltage gain AVOLVOUT=

35、 10 V, 1 01 10 kV/V RL= 1 k, CL 10 pF 2,3 5 Common mode rejection ratio CMRR VCM= 0 V to +10 V 1,2,3 01 60 dB VCM= 0 V to -10 V 60 Output voltage swing +VOUTRL= 1 k, CL 10 pF 1,2,3 01 +11 V -VOUT-11 Output current +IOUTRL= 200 , VOUT= 5 V 1,2,3 01 +25 mA -IOUT-25 Output resistance ROUTTA= +25C 1 01

36、60 Supply current ISVOUT= 0 V, IOUT= 3.4 mA minimum 1,2,3 01 17 mA Power supply rejection ratio +PSRR +V = +5.0 to +15 V, -V = -15 V 1,2,3 01 60 dB -PSRR -V = -5.0 V to -15 V, +V = +15 V 60 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

37、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA+125C Group A subgroups Device type Limi

38、ts Unit VS= 15 V, RL= 1 k unless otherwise specified Min Max Gain bandwidth GBWP VOUT= 90 mV, AV= 20 V/V, TA= +25C 4 01 .875 GHz Full power bandwidth FPBW CL 10 pF, VPK= 10 V, 1/ TA= +25C 4 01 13.5 MHz Slew rate SR VOUT= 5 V 4 01 750 V/s 5,6 600Rise time tR2/ 3/ 9 01 5 ns Overshoot OS VOUT= 200 mV 3

39、/ 9 01 40 % Settling time tSAV= -20 V/V, RL= 1 k, 3/ 10 V step to 0.1 % 9 01 250 ns 1/ Full power bandwidth guaranteed based on slew rate measurement using: FPBW = SR / (2 x VPK). 2/ Rise time measurement of 25 percent to 75 percent with VOUT= 200 mV. 3/ If not tested, shall be guaranteed to the lim

40、its specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Ca

41、se outlines C 2 Terminal number Terminal symbol 1 +INPUT NC 2 NC +INPUT 3 -V NC 4 NC -V 5 NC NC 6 NC NC7 NC NC 8 OUTPUT NC 9 NC NC10 +V NC 11 NC NC12 NC OUTPUT 13 NC NC14 -INPUT +V 15 - NC 16 - NC 17 - NC 18 - NC 19 - NC 20 - -INPUT NC = No connection. FIGURE 1. Terminal connections. Provided by IHS

42、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91535 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q

43、 and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection p

44、rocedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be

45、in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manuf

46、acturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2)

47、TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufac

48、turers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test