DLA SMD-5962-90976-1992 MICROCIRCUIT CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 256 BYTES OF ON CHIP DATA RAM MONOLITHIC SILICON《硅单块 带随机存取存储器芯片数据的8比特微控制器 互补高性能金属氧化物半导体结构单芯片 微型电路》.pdf

《DLA SMD-5962-90976-1992 MICROCIRCUIT CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 256 BYTES OF ON CHIP DATA RAM MONOLITHIC SILICON《硅单块 带随机存取存储器芯片数据的8比特微控制器 互补高性能金属氧化物半导体结构单芯片 微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90976-1992 MICROCIRCUIT CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 256 BYTES OF ON CHIP DATA RAM MONOLITHIC SILICON《硅单块 带随机存取存储器芯片数据的8比特微控制器 互补高性能金属氧化物半导体结构单芯片 微型电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-5962-90976 = 9999996 0030926 884 REVISIONS DATE (YR-MO-DA) APPROVED LTR DESCRIPTION SHEET SHEET REV STATUS OF SHEETS PMIC NIA STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA 193 JUL 91 JREPARED BY CHRISTOPHER A

2、. RAUCH CHECKED BY THONAS El. HESS RPPROVED BY MONICA L. POELKING DRAWING APPROVAL DATE 92-1 l. -04 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, CHMOS SINGLE-CHIP, 8- BIT MICROCONTROLLER WITH 256 BYTES OF ON CHIP DATA RAM, MONOLITHIC SILICON SIZE LAGE CODE A I 67

3、268 5962-90976 SHEET 1 OF 26 5962-EO42 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-90976 9999996 0030927 710 = 1. SCOPE 1.1 scope. This drawing forms a part of a one part - one part rider documentation system (see 6.6 herein). Two produc

4、t assurance classes consisting of military high reliability (device classes B, QI and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non

5、-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STO-883 in conjunction with conpliant non-JAN devices“. When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN shall be as shown in the following

6、 example: - I I X I I I Lead Case 5962 90976 I I I I Devi ce Devi ce RHA Federal stock class designator type class outline finish designator (1.2.1) (1.2.2) designator (1.2.4) (1.2.5) L (1.2.3) Drawing number 1.2.1 Radiation hardness assurance (RHAI desiqnator. Device classes M, B, and S RHA marked

7、devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V devices shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in

8、the absolute maximm ratings herein and the RHA marked device shall be marked in accordance with MIL-1-38535. A dash (-) indicates a non RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number Circuit function o1 80C51FB CHMOS single

9、 chip 8-bit microcontroller 02 8OC51FB-16 CHMOS single-chip 8-bit microcontroller 1.2.3 Device class desiqnator. This device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the

10、 requirements for NON-JAN class EI microcircuits in accordance with 1.2.1 Of MIL-STD-883 B or S Q or V Certification and qualification to MIL-M-38510 Certification and qual if ication to MIL-1-38535 1.2.4 Case outline(s1. The case outline(s) shall be as designated in MIL-STO-1835 and as follows: Ter

11、mi na 1s Packase style Outline letter Descript ive des isnator See figure 1 GDIPl-T40 or See figure 1 CQCCl-N44 CO IP2-T40 44 J-leaded ceramic chip carrier 44 Square leadless chip carrier 40 Dual-in-1 i ne 44 Gullwing-lead ceramic chip carrier 1.2.5 Lead finish. The lead finish shall be as specified

12、 in MIL-M-38510 for classes M, B, and S or MIL-1-38535 for :lasses Q and V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “X“ designation is for use in specifications when lead finishes A, B, or C are considered acceptable and interchangeable without reference. 5962

13、-90976 STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 2 ESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-90976 9999996 0030928 b57 = STANDARDIZED SIZE MILITA

14、RY DRAWING A DEPENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 1.3 Absolute maximum ratinas. Storage teErature range -65C to +150C Voltage on EA/Vpp pin to Vss . 0.0 V dc to t13.0 V dc Voltage on any other pin to Vss Maximum Io, per 1/0 pin . -0.5 V dc to +6.5 V dc . 15 mA Power di

15、ssipation (P ) 1.5 W Lead temperature (soydering 10 seconds) . 265C Thermal resistance, junction-to-case (eJc): Cases U and X . See MIL-STD-1835 Cases T and Z . 14WW Junction temperature . +150C 1.4 Recomnded operatinq conditions. Case Operating Tenperature Range . -55C to +125“C 2/ Oscillator frequ

16、ency: Device O1 . 3.5 MHz to 12 MHz Device O2 . 3.5 MHz to 16 MHz Supply Voltage, Vcc . +4.0 V dc to 6.0 V L- 1.5 DiQital testinq for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . XX percent 31 5962-90976 3 SHEET - I/ Power dissipat

17、ion based on package heat transfer limitations, not device power consumption. 2/ Case temperatures are instant on. 3J Values will be added when they become available. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5962-9097b 9999996 0030929 593

18、STIZED MILITARY Dk?“G DEFENSE ELEC!fRONICS SUPPLY -ER DBYTON, Om0 45444 2. APPLICABLE DOCUMENTS 5962-90976 SIZE A REVISION LEVEL SHEET 4 2.1 Government soeclfications, standards, bulletin, and handbook. Unless otherwise specified, the following ipecifications, standards, bulletin, and handbook of th

19、e issue listed in that issue of the Department of Defense Index If Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified ierein. SPECIFICATIONS MILITARY MIL-I -38535 MIL-N-38510 STANDARDS MILITARY MIL-STO-480 MIL-STO-883 MIL-STO-1835 - - Micr

20、ocircuits, General Specification for. Integrated Circuits, Manufacturing, General Specification for - - - Microcircuit case outllnes. Configuration Control-Engineering Changes. Deviations and Waivers. Test Methods and Procedures for Microelectronics. BULLETIN MILITARY MIL-BUL-103 - List of Standardi

21、zed Military Drawings (SM)s). HANDBOOK MILITARY MIL -HDBK-780 - Standardized Military Drawings (Copies of the specifications, standards, bulletin, and handbook required by manufacturers In connection with specific acquisition functions should be obtained from the contracting activity or as directed

22、by the contracting activity.) herein, the text of this drawing shall take precedence. 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited 3. REQUIREMENTS 3.1 Item reuuirements. The individual item requirements for device class M shall be in a

23、ccordance with 1.2.1 of HIL-STO-883, “Provisions for the use of MIL-STO-883 in conjunction with cospliant NON-JAN devices“ and as specified herein. The individual item requirements for device classes B and S shall be in accordance with MIL-M-38510 and as specified herein. For device classes B and S

24、a full electrical characterization table for each device type shall be Included in this SMD when a qualified source exists. The individual item requirements for device classes Q and V shall be in accordance with MIL-1-38535 and as specified herein. specified in MIL-M-38510 for device classes M, B, a

25、nd S and MIL-1-38535 for device classes Q and V and herein. 3.2 Desian. construction. and physical dimensions. The design, construction, and physical dimensions shall be as 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The t

26、erminal connections shall be as specified on figure 2. 3.2.3 Functional block diaaram. The functional block diagram shall be as specified on figure 3. 3.2.4 Radiation exwsure circuit. The radiation exposure circuit shall be as specifled when available. 3.3 Electrical performance characteristics and

27、Dost irradiation parameter llmits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter 1 hits are as specified in table I and shall apply over the full case operating temperature range. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo rep

28、roduction or networking permitted without license from IHS-,-,-3.4 Electrical test reuuirements. The electrical test requirements shall be the subgroups specified in table IIA. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in :he electri

29、cal tests for each subgroup are defined in table I. accordance with MIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Marking for device classes B and S shall be in accordance with MIL-M-38510. Marking for device Classes Q and V shall be in

30、 accordance with MIL-1-38535. 3.5.1 Certification/comliance mrk. The compliance mark for device class M shall be a “C“ as required in HIL-STD-883 (see 3.1 herein). The certification mark for device classes B and S shall be a “J“ or “JAN“ as required in MIL-M-38510. The certification mark for device

31、classes Q and V shall be a “QML“ as required in MIL-1-38535. manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.3 herein). For device classes Q and V a certificate of conpliance shall be required from a QML-38535 listed manufacturer in order to supply to the r

32、equirements of this drawing (see 6.7.2 herein). The certificate of compliance submitted to DESC-ECC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product mets, for jevice class M the requirements of MIL-ST-883 (see 3.1 herein) or for device cla

33、sses Q and V the requirements of YIL-1-38535 and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (See 3.1 herein) or device classes B and S in MIL-M-38510 or for device classes Q and V in MIL-1-38535 shall be provide

34、d dth each lot of microcircuits delivered to this drawing. 3.6 Certificate of compliance. For device class M a certificate of conpliance shall be required from a 3.8 Notification of chanqe for device class M. For device class M notification to DESC-ECC of change of product 5.9 Verification and revie

35、w for device class M. For device class M, DESC, DESCs agent and the acquiring activity see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-480. retain the option to review the manufacturers facility and applicable required documentation. Offsho

36、re documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit qroup assiqnment for device classes M. B. and S. Device classes M, B. and S devices covered by this drawing shall be in microcircuit group nuher 105 (see MIL-M-38510. appendix E). 3.11 Serialization for

37、 device class S. All device class S devices shall be serialized in accordance with YIL-M-38510. 4. QUALITY ASSURANCE PROVISIONS 4.1 Samlinq and inspection. For device class M sanpling and inspection procedures shall be in accordance with section 4 of MIL-M-38510 to the extent specified in MIL-STD-88

38、3 (see 3.1 herein). For device classes B and S sampling ind inspection procedures shall be in accordance with MIL-M-38510 and method 5005 of MIL-STD-883, except as modified ierein. For device classes Q and V sampling and inspection procedures shall be in accordance with MIL-1-38535 and the ievice ma

39、nufacturers QM plan. 4.2 Screeninq. For device class M screening shall be in accordance with method 5004 of MIL-STD-883, and shall be :onducted on all devices prior to quality conformance inspection. For device classes B and S screening shall be in iccordance with method 5004 of MIL-STD-883, and sha

40、ll be conducted on all devices prior to qualification and quality :onformance inspection. For device classes Q and V screening shall be in accordance with MIL-1-38535, and shall be :onducted on all devices prior to qualification and technology conformance inspection. The following additional :riteri

41、a shall apply. 4.2.1 Additional criteria for device classes M, B. and S. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition C or D. For device class M the test circuit shall be submitted to DESC-ECC for review with the certificate of compliance. For device classes B and S the test circu

42、it shall be submitted to the qualifying activity. (2) TA - +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 5962-90976 STANDARDIZED SIZE MILITARY DUKCNG A DEFENSE ELECTROWICS SUPPLY CENTER 5 DAYTON, OHIO 45444 REVIS ION LEVEL SHEET DESC FORM

43、193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-90976 9999996 O030933 143 TABLE I. Electrical performance characteristics. Conditions Group A Device Limits Unit -55C 5 TC 5 +125“C I/ subgroups type Test s-1 4.0 V 5V 6.0 V I unles

44、s ijherwise specified v -cs.o v Hin Max I I Input low voltage (except XTAL1, RST) I 1 IH 1 Input high voltage I IH1 I I I I Input high voltage (XTAL1 and RST) Output low voltage (ports 1,2,3) 3/ Output low voltage VOL1 IIOL - 200 IrA 41 (Port O, ALE, PSEN) 3/ - 3.2 nd l:k - 7.0 nd I I Output high vo

45、ltage (Ports I. 2, 3,) ALE, PSEN I I l Logical O input 1 IIL VIN - 0.45 V current (Ports 1. I I 2 and 3) Input leakage I $1 1-45 VIN Vcc I I current (Port O) I I l Logical 1 to O I ITL /VIN 2.0 v transition current I (Ports i, 2 ami 3) I I I -750 I I I I I I See footnotes at end of table. STANDARDIZ

46、ED SIZE 5962-90976 MUITARY DiZiWNG A DEFENSE ELECTRONICS SUPPLY CENTER DLLYTON, OHIO 45444 REVISION LEVEL SHEET I I I 6 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-90976 9999996 0030932 088 TABLE I. Electrical perfo

47、rmance characteristics - Continued. iroup A iubgroups bevice 1 Limits type I I Unit smo1 I Conditions I -55C 5 TC 5 +125OC u 4.0 V 5 V e 6.0 V vs =c6. v I unless oSherwise specified I Test 1 I Max Min I 225 I I 40 I 1, 2, 3 m RST pulldown resistor Pin capacitance 4 at 1.0 MHt, 25OC See 4.4.ld I I CI

48、O I PF 1, 2, 3 Power supply current: Idle mode at 16 MHz Powerdown at 16 MHz Running at 16 MHz Functional tests I /See 4.4.lb, Vcc - 4.0 V, 6.0 V I ALE pulse width 9, 10 11 ns Load capacitance for Port O, ALE/PROG and PSEN - 100 pF, TLHLL 1 load capacitance for all tAVLL I See figure 4 -1 other outp

49、uts = 80 pF a! I -I I j ISbCL I I Address val id to ALE low Address hold after ALE low I 3bCL I ALE low to valid instruction in -1 I LLPL I CI -I -I PLIV I I ALE low to PSEN low PSEN pulse width PSEN low to valid instruction in Input instruct ion hold after PSEN Input instruction float after PSEN I OI tPXIX -I tPXIZ I I See footnotes at end of table. 5962-90976 STfNDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CWTER 7 DAYTON