DLA SMD-5962-90968-1991 MICROCIRCUITS LINEAR 4TH ORDER ELLIPTIC NOTCH FILTER MONOLITHIC SILICON《硅单块 第四序列椭圆陷频滤波器 直线式微型电路》.pdf
《DLA SMD-5962-90968-1991 MICROCIRCUITS LINEAR 4TH ORDER ELLIPTIC NOTCH FILTER MONOLITHIC SILICON《硅单块 第四序列椭圆陷频滤波器 直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90968-1991 MICROCIRCUITS LINEAR 4TH ORDER ELLIPTIC NOTCH FILTER MONOLITHIC SILICON《硅单块 第四序列椭圆陷频滤波器 直线式微型电路》.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、SMD-5962-90968 59 999999b O005838 2 = PMIC WA THIS DRAWING IC AVAILABLE OR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DESC FORM 193 SEP 87 BEENSE ELECTRONICS SUPPLY CEMVER DAYTOM, OHIO 45444 MICROCIRCUITS, LINEAR, 4TH ORDER ELLIPTIC NOTCH FILTER, MONOLITHIC SILICON SIZE CAGE CODE I 596240968 CHEET 1
2、 OF 17 euS. GOVIRMMIHT FINTIHG WKt: 1917 - 748-11p/coOIi 5962-EO24 BISTRIRUTION STATEMENT A. Approved for public rdease; dislrlbullon IS uPilimiled. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-t . -. -. 1. SCOPE 1.1 Scope. This drawing forms a pa
3、rt of a one part - one part number documentation system (see 6.6 herein). 1.1) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). represent non-JAN class i microcircuits in accordanc
4、e with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. hardness assurance(RHA) levels are reflected in the PIN. Two product assurance classes consisting of military high reliability (device classes 6, Q, and Device class M microcircuits Wh
5、en avai labte, a choice of radiation 1.2 PIN. The PIN shall be as shown in the following example: - X - 5962 90968 01 - n. C I I I l I I I I I I A L I I Federal RHA Devi ce Devi ce Case Lead stock class designator type class outline finish (See 1.2.2) designator (See 1.2.4) (See 1.2.5) designator (S
6、ee 1.2.1) - / (See 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. Device classes M, E, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet
7、the MIL-1-38535 specified RHA levels and shall be marked with the appropriate RIiA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device typds). The device typeCs) shall identify the circuit function as follows: Device type Generic number Circuit function O1 LHF90 4th-order elliptic notch
8、filter 1.2.3 Device class desimator. product assurance level as follows: This device class designator shall be a single letter identifying the Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of
9、MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q OP V Certification and qualification to MIL-1-38535 For device classes M, B, and S, case outline(s) shall meet the requirements in 1.2.4 mouelingo. appendix 6 of HIL-EI-38510 and as listed below. the requirements of HIL-1-38535, app
10、endix C of MIL-M-J8510, and as listed below. For device classes Q and V, case outline(s) shall meet Outline letter Case,out line C D-I (IC-Lead, .785“ x .310“ x .2“), dual-in-line package The lead finish shall be as specified in MIL-M-38510 for classes M, 8, and s or 1.2.5 Lead finish. MIL-1-38535 f
11、or classes Q and V. packaging. considered acceptable and interchangeable wi thout preference. Finish letter “X“ shall not be marked on the microcircuit or its The ttXft designation is for use in specifications when lead finishes A, 6, and C are Provided by IHSNot for ResaleNo reproduction or network
12、ing permitted without license from IHS-,-,-SMD-5962-909bB 59 m 9999996 0005840 O 1.3 Absolute maximum ratings. I/ supply voltage (v+ to V-) 2/ - - - - - - - - - - - - - - Voltage at any input or output 2/- - - - - - - - - - - - Input current at any pin 3/ - - - - - - - - - - - - - - Package input cu
13、rrent (IIN) 3/ - - - - - - - - - - - - - Pouer dissipation (PD) - - - - - - - - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - - Junction temperature (TJ) - - - - - - - - - - - - - - - Thermal resistance, junction-to-amb
14、ient hJA) - - - - - * Thermal resistance, junction-to-case (OJ ) - - - - - - - 1. -0.3 V to +I6 y V- -0.3 V to V 5mA 20 mA 500 mW -65C to +150C +300 C +I5OoC See MIL-M-38510, appendix C 59OC/W board mounted +0.3 V 1.4 Recommended operatinq conditions. supply voltage (v to LO- - - - - - - - - - - - -
15、 - - - 4.0 V to 15.0 V Ambient operating temperature range (TA) - - - - - - - - -55C to +125“C 2. APPLICABLE DOCUI.IENTS 2.1 xds, bulletin, and handbook. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of
16、 Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATIONS MILITARY MIL-M-38510 - 1-iicrocircuits, General Specification for. MIL-1-38535 - Integrated Circuits, Manufacturing, General Specification for. STA
17、NDARDS MILITARY I4IL-STB-480 - Configuration Control-Engineering Changes, Deviations and Waivers. I-lIL-STD-883 - Test !,lethods and Procedures for I.licroelectronics. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDs). HANDBOOK MILITARY II I L-HDBK-780 (Copjes of the spec
18、ifications,. standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions s.iould be obtained from the contracting activity or as directed by the contracting activity.) DESC FORM 193A SEP a7 Provided by IHSNot for ResaleNo reproduction or networking p
19、ermitted without license from IHS-,-,-2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUPREf.1ENTS 3.1 Item requirements. The individual item requirements for device class M sha
20、ll be in accordance uith 1.2.1 of MIL-STD-883, lProvisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. The individual item requirements for device classes 8 and S shall be in accordarice with HIL-M-38510 and as specified herein. characterization
21、 table for each device type shall be included in this SMD. requirements for device classes Q and V shall be in accordance with MIL-1-38535, the device manufacturers Quality Management (Qii) plan, and as specified herein. For device classes Ei and S, a full electrical The individual item 3.2 Design,
22、construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-1.1-38510 for device classes M, 8, and S and MIL-1-38535 for device classes Q and V and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3
23、.2.2 Terminal connections. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance character isti cs and postirradiation parameter li mi ts. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits
24、 are as Specified in table I and shall apply over the full ambient operating temperature range. The terminal connections shall be as specified on figure 1. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each
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