DLA SMD-5962-90710 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 10-BIT BUS INTERFACE D-TYPE LATCHES WITH THREE STATE OUTPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-90710 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 10-BIT BUS INTERFACE D-TYPE LATCHES WITH THREE STATE OUTPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90710 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 10-BIT BUS INTERFACE D-TYPE LATCHES WITH THREE STATE OUTPUTS MONOLITHIC SILICON.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 10-03-04 Charles F. Saffle The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5
2、6 7 8 9 10 11 12 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Tim H. Noh APPROVED BY Monica
3、L. Poelking MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 10-BIT BUS INTERFACE D-TYPE LATCHES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-03-09 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90710 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E491-09 Pr
4、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two produ
5、ct assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA
6、) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90710 01 M K X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1
7、RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A da
8、sh (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ALS29842 10-bit bus interface D-type latches with three-state outputs 1.2.3 Device class designator. The device class designator is a
9、 single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and quali
10、fication to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat package L GDIP3-T24 or CDIP4-T24 24 Dual-in-line package 3 CQCC1-N28 28 Square chip ca
11、rrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90710 DEFE
12、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) -0.5 V dc to +7.0 V dc Input voltage range . -1.2 V dc at -18 mA to +7.0 V dc Voltage applied to a disabled three-state output . -0.5 V dc to +5.5
13、 V dc Storage temperature range -65C to +150C Continuous power dissipation (PD) 2/ . 467.5 mW Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +175C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V d
14、c minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) . 0.8 V dc Maximum high level output current (IOH) -18 mA Maximum low level output current (IOL) 32 mA Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2
15、.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SP
16、ECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of St
17、andard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precede
18、nce. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute m
19、aximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Continuous power dissipation is defined as VCCx ICC. Device must withstand the added PDdue to short circuit test; e.g., IOS. Provided by IHSNot for Resa
20、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for d
21、evice classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for devic
22、e class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V
23、 or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2.
24、3.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation p
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