DLA SMD-5962-90538 REV D-2003 MICROCIRCUIT LINEAR QUAD SCHOTTKY DIODE ARRAY MONOLITHIC SILICON《硅单片 四重肖脱基二极管阵列 线性微型电路》.pdf
《DLA SMD-5962-90538 REV D-2003 MICROCIRCUIT LINEAR QUAD SCHOTTKY DIODE ARRAY MONOLITHIC SILICON《硅单片 四重肖脱基二极管阵列 线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90538 REV D-2003 MICROCIRCUIT LINEAR QUAD SCHOTTKY DIODE ARRAY MONOLITHIC SILICON《硅单片 四重肖脱基二极管阵列 线性微型电路》.pdf(9页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R185-93. 93-06-11 Michael FryeB Changes in accordance with NOR 5962-R014-97. 96-10-08 Ray Monnin C Made changes to forward voltage drop and leakage current test in table I. Revised source to reflect cage 01295.
2、 Updated boilerplate. -lgt 01-06-13 Ray Monnin D Update boilerplate for device class V. - gt 03-06-11 Ray Monnin THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY Joseph A. Kirby DEFENSE S
3、UPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, QUAD SCHOTTKY DIODE ARRAY, MONOLITHIC SILICON AND AGENCIES OF THE DEPART
4、MENT OF DEFENSE DRAWING APPROVAL DATE 90-11-06 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-90538 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E511-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permi
5、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90838 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (devi
6、ce classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as show
7、n in the following examples. For device classes M and Q: 5962 - 90538 01 P X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 - 90538 01 V P X Federal stock class designator RH
8、A designator (see 1.2.1) Devicetype (see 1.2.2) Deviceclass designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA de
9、signator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number
10、 Circuit function 01 UC1611 Quad schottky diode array, 1 amp 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device cla
11、sses M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q
12、or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90838 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR
13、 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-P
14、RF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Peak inverse voltage (per diode). 45 V dc Diode-to-diode voltage. 75 V dc Peak forward current . 1 A Power dissipation (PD) . 1 W 2/ Lead temperature (soldering, 10 seconds) +300C Th
15、ermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) 150C 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C TA +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards,
16、 and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICAT
17、ION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-10
18、3 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/
19、Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate at 8.0 mW/C for TAabove +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f
20、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90838 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this d
21、rawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as sp
22、ecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-J
23、AN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case o
24、utline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performa
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