DLA SMD-5962-89659-1990 MICROCIRCUIT LINEAR FET BUFFER HYBRID《场效应晶体管缓冲器线性混合微型电路》.pdf
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1、f LTR DESCRIPTION DATE (YR-MO-DA) APPROVED STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE :OR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 AMSC NIA I I SHEET 1 *US. OOYIRMHT FWJlINo OFFICE: 1987 - 748-119/60911 DESC FO
2、RM 193 SEP a7 5962-E1314-1 DISTRIBUTION STATEMENT A. Approved for publlc release; dlslrlbulion Is unilmiled. -1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i I. scwk 1.1 Scope. Thfs drawing describes device requirements for class H hybrfd microci
3、rcuits ta be 1.2 Part number. The complete pdrt nunber shall be as shown in the following example: Irocessed i-n accordance with MIL-If-38534. 5962-89659 O1 X I I- T- X T 1 t I I I I I I I 1 1 t Drawing number Device type tase outline Lead finish per (1.2.11 (1.2.2) MIL-H-38534 1.2.1 Device type. Th
4、e device type chat? identify the circu%t function as folTows: Device type Generic number Ci rcui t function 01 EL2004 FET buffer 1.2.2 Case outlines. The case outlines shall be as designated in appendix C of MIL-bl-38510, and Outline letter Case outline (See figure 1, TO-8 (12-lead can) C-6 (52-lead
5、,.761Ir x ,761 x ,120“), square leadless chip carrier s fo-tlows: X Y 1.3 Absol ute maxirnuin rati ny s. 1.4 Recomnended operating conditions. Positive supply voltage (V+) - - - - - - - - - - - - - - - Negative supply voltage (V-) - - - - - - - - - - - - - - - Ambient operating temperature range (TA
6、) - - - - - - - - - *20 V dc *20 V dc 1.5 W 2.5 W *250 n4 -65C to +150C 3QOC 25“C/W 60C6W +175 C 3l0C/W lOOC/W +15 V dc -55C to +l25“C -15 Y dc SIZE A 5962 -8965 9 STANDARDIZED MILITARY DRAWING I DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I REVISION LEVEL I SHEET 3 * J DESC FORM 193A SEP a
7、7 xi U S. GOVERNMENT PRINTING OFFICE 19W-548-9M Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-2. APPLICABLE DKUMENTS STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 2.1 Government specifications, standard, and bul
8、letin. Unless otherwise specified, the following ;pecifications, standard, and bulletin ot the issue listed in that issue of the Department of iefense Index of Specifications and Standards Specified in the solicitation, form a part of this SIZE A 5962-89659 REVISION LEVEL SHEFT 3 Irawing to the exte
9、nt specified herein. SPEC IF ICATI ONS MILITARY MIL-M-3b510 - Microcircuits, General Specification for. MIL-H-38534 - Hybrid Microcircuits, General Specification for. STANDARD MI LI TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. BULLETIN MI LI TARY MIL-BUL-103 - List of Standar
10、ized Military Drawings (SMDs). (Copies of the specifications, standard, and bulletin required by manufacturers in connection with qecific acquisition functions should be obtained from the contracting activity or as directed by the ontracting activity. ) 2.2 Order of precedence. In the event of a con
11、flict between the text of this drawing and the meferences cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 I tem requirements. s specitied herein. The i ndi vi dual i tem requirements chal 1 be i n accordance MIL-H-38534 and 3.2 Design, construction, and physical dim
12、ensions. The design, construction, and physical limensions shall be as specitied in MIL-H-JSJ4 and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein and on figure 1. 3.2.2 Tenninal connections. The terminal connections shall be as specified on figure 2. 3.3 Elec
13、trical performance characteristics. Unless otherwise specified herein, the electrical ierfonnance characteristics are as specified in table I and shall apply over the full specified iperating temperature range, 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups
14、 ;pecifified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-H-38534. The part shall be marked with the )art number listed in 1.2 herein. listed in MIL-BUL-103 (see 6.6 herein). In addition, the manufacturers part num
15、ber may also be marked as Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electtpical performance characteristics. 1 e t t t -55C TA +125C subgroups III L Min 1 Max f I I unless olherwfse specified I 1 1 I I. I f 1 t 1 Condiions group A t Li
16、mits t Unit Test I 10 mv IRs c 100 kSb I 1 t I 15 1 mV I I I Voltage gain tAy0L YIN = *lo V, Vs = Y5 Y 1 4,5,6 f 0.971 1.0 I V/V 1 t I I I t I 1 t I I 1 4,5,6 I 0.92; 0.98! V/V VN = *I0 V, RL = LQOQ I t t I t I I I 1 I I I t t I 1 I I Output offset uoitage IVos IUS z *f5 V lRL = kn I i tvs = *I5 Inp
17、ut impedance IRIN /Ys = Y5 Y, VIN = *i Y I4 !lo4 in lRL = 1 l. f 1 l!ItFity I tRL = I kn I 1 l I IV j4 Output impedance IROUT fVs = *5 V *I Y, ARt = 0 Output vattage swing p(j FVs = *I5 Y, VIN = 4 Y r 46 I *i2 I t I I b I I I t tVs = *15 V I 4,%6 I *9 I IV L IVik = *f0.5VY RL = 00 I I I I t t 1 I F
18、I L I f I 1 I I I r t , 1 = *15 V F 2,3 I I 10 I nA I 1 t tTj = TATMX k F I 1 t IVN = O Y, RL = L Ftn t: I F t I c I; I 1 t YEN = 0 Y, RL = I kn t I I I 1 I 1 I F I 0.251 nA I Input current FVs = 45 V Ib Wlk = (FY, Rir= 1 ka F I I I,2,3 i I24 ImA Supply current = f*5 IIs ee footnotes at end of“ taMe
19、 STANDARDIZED MILITARY DRAWING. DEFENSEELECtRONiCS SUEPLY CENTER DAWN, OHIO45444 : SIZE rA 5962-89659 SHEET AEYICIQN LEVEL 6 :SC FORM T93A iEP 82 t U S.GOVERNMENTPRINllNG OFFICE iBBB-5M54i Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57b2-8765
20、7 57 7777776 0000bb2 T + I See footnotes at end of table. STAN DARDI ZED SIZE MILITARY DRAWING A 5962-89659 DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET 5 DAYTON, OHIO 45444 TABLE I. Electrical performance characteristics - Continued. I I I I I unless oi3erwise specified /subgroup Conditio
21、ns IGroup A I -55C TA +I25OC Test Output offset voltaye !VOS IVs = 1.15 V IKs 5 100 ka IRL = 50n I IVIN = O V I I I I I1 I I I 2,3 Input impedance 14 I I I I *5 V, VIN = 1.1 V, 14 A L = 5gn to infinity I TA = 25 C I IROUT I I IVa I l = I Output impedance Output voltage swing IV0 IVs = 15 Y, VIN = 14
22、 V IRL = 50n I I I 4,5,6 I Input current I I1 I I I I I I Limits 1 Unit II Min i Max i - i 30 i mV I I T-r- I 35 I mV I I - 0.901 1.0 I v/v I I I 1 - 0.801 0.951 V/V I I I i 108 I In I I I I - I8 In I I I I I I *2.0 I iv I I I I - i 250 i pA I I i 10 i nA I I I I i i - I20 ImA I I I i Provided by IH
23、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- TABLE I. Electrical performance characteristics - Continued. STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYMN, OHIO 45444 Test StZE A 5962-89659 * REWSlN LEVEL SHEET 6 I 1 Symbo I Eandwi dth I I
24、 BW I I I I I I I I I I I I Slew rate i SR I I I I Ri se time 1% i I I I i Propagation del ay pP ee footnotes at end of table. Conditions Group A i Limits i Unit -55C TA +125C Isubgroupsl-II unless oherwTse specified I I Min 1 Max I I I I I MHz i 4 i 200 i I I I l I 1 I 5,6 I 175 I I MHz I I I I I I
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