DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf
《DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device Class V criteria. Add delta limits, table III. Add case outline X. Update boilerplate. Editorial changes throughout. lgt 00-12-28 Raymond Monnin B Change lead temperature for case outline X in section 1.3. Add se
2、ction 1.5, radiation features. Correct input voltage levels for waveforms in figure 4. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assurance requirements. Editorial changes throughout. jak 04-10-21 Thomas M. Hess C Update boilerplate paragraphs to the curre
3、nt MIL-PRF-38535 requirements. - LTG 11-04-20 David J. Corbett REV SHET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeffery Tunstall DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil ST
4、ANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Monica L. Poelking APPROVED BY Charles Reusing MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-09
5、-12 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-89539 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E138-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE
6、VISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in th
7、e Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89539 01 E A Federal stock class designator RHA designator (see 1.2.1) Device
8、type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / /Drawing number For device class V: 5962 F 89539 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing n
9、umber 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA desi
10、gnator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC157 Quad 2-input multiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying
11、the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor
12、self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
13、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E
14、 GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absol
15、ute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current 50 mA DC VCCor GND current (per pin) . 50 mA S
16、torage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +245C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 R
17、ecommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall times: VCC= 3.6 V 0 to 8 ns VCC= 5.5 V 0 to 8 n
18、s 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single Event Latchup (SEL) occurs at LET (see 4.4.4.2) . 93 MeV-cm2/mg 6/ Single Event Upset (SEU) occurs at LET (see 4.4.4.2) 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximu
19、m rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange an
20、d case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention an
21、d battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. 6/ Limits obtained during Technology characterization/Qualification, guaranteed by design or process, but not pro
22、duction tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C S
23、HEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
24、the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEP
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596289539REVC2011MICROCIRCUITDIGITALADVANCEDCMOSQUAD2INPUTMULTIPLEXERMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-699462.html