DLA SMD-5962-89536 REV F-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 1K X 9 FIFO MONOLITHIC SILICON《硅单片1K X 9先进先出互补型金属氧化物半导体数字存储微电路》.pdf

《DLA SMD-5962-89536 REV F-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 1K X 9 FIFO MONOLITHIC SILICON《硅单片1K X 9先进先出互补型金属氧化物半导体数字存储微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-89536 REV F-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 1K X 9 FIFO MONOLITHIC SILICON《硅单片1K X 9先进先出互补型金属氧化物半导体数字存储微电路》.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE APPROVED B Add device type 06. Add vendor CAGE 0HGZ7 as source of supply for device types 01 through 04. Editorial changes throughout. 93-09-17 M. A. Frye C Changes in accordance with NOR 5962-R143-94. 94-05-10 M. A. Frye D Changes in accordance with NOR 5962-R028-95.

2、 94-11-04 M. A. Frye E Updated boilerplate to reflect current requirements and made corrections to waveforms. - glg 01-01-17 Raymond Monnin F Boilerplate update, part of 5 year review. Corrected generic number on page 2. ksr 06-06-06 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN RE

3、PLACED. REV SHEET REV F F F F SHEET 15 16 17 18 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles Reusing COLUMBUS, OHIO 43218-3990 http:/www.ds

4、cc.dla.mil APPROVED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 27 March 1990 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 9 FIFO, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-8953

5、6 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E452-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97

6、 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example: 5962-89536 01 X X | | | | |

7、| | | | | | | Drawing number Device type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit Access time 01 7202 1K X 9-bit parallel FIFO 120 ns 02 7202 1K X 9-bit par

8、allel FIFO 80 ns 03 7202 1K X 9-bit parallel FIFO 65 ns 04 7202 1K X 9-bit parallel FIFO 40 ns 05 7202 1K X 9-bit parallel FIFO 30 ns 06 7202 1K X 9-bit parallel FIFO 20 ns 1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows: Outline letter Descriptive d

9、esignator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 dual-in-line package Y GDIP1-T28 or CDIP2-T28 28 dual-in-line package Z GDFP2-F28 28 flat package U CQCC1-N32 32 rectangular chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximu

10、m ratings. Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC output current (IOUT). 50 mA Ambient storage temperature -65C to +150C Maximum power dissipation (PD):. 1.0 W Lead temperature (soldering, 10 seconds) . +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperatu

11、re (TJ) . +150C 1/ 1.4 Recommended operating conditions. Supply voltage range (VCC). +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) . 2.2 V dc Maximum low level input voltage (VIL) . +0.8 V dc 2/ Case operating temperature range (TC) -55C to +125C 1/ Maximum junction temperature may b

12、e increased to +175C during burn-in and steady state life. 2/ 1.5 V undershoots are allowed for 10 ns once per cycle. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBUS COLUM

13、BUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues

14、 of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard

15、Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the

16、 Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, sup

17、ersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing

18、 that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity appro

19、val in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to

20、 identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Termi

21、nal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection provided that each coated micro

22、circuit inspection lot (see MIL-PRF-38535, appendix A) shall be subjected to and pass the Internal Water-Vapor Content test (test method 1018 of MIL-STD-883). The frequency of the internal water vapor testing may not be decreased unless approved by the preparing activity. 3.3 Electrical performance

23、characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II.

24、The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FO

25、RM 2234 APR 97 TABLE I. Electrical performance characteristics. | | Conditions | | | | Test |Symbol | -55C VIH|1, 2, 3 | All | -10 | 10 | A | | | | | | | | | VCC= 4.5 V, IOL= 8.0 mA | | | | | Output low voltage |VOL| VIL= 0.8 V, VIH= 2.2 V |1, 2, 3 | All | | 0.4 | V | | | | | | | | VCC= 4.5 V, IOH=

26、-2.0 mA | | | | | Output high voltage |VOH| VIL= 0.8 V, VIH= 2.2 V |1, 2, 3 | All | 2.4 | | V | | | | | | | | | | | | | | Operating supply |ICC1| RS = FL/RT = VIH|1, 2, 3 | 01-03 | | 100 | mA current | | VCC= 5.5 V | | | | | | | f = maximum, outputs open | | | | | | | VCC= 5.5 V, | | 04-06 | | 140 |

27、 | f = 20 MHz, outputs open | | | | | | | | | | | | Standby power supply |ICC2| R = W = RS = FL/RT = VIH, |1, 2, 3 | 01-03 | 15 | mA current | | outputs open, f = 0 MHz | | | | | | | | 04-06 | | 20 | | | | | | | | Power down current |ICC3| All inputs = VCC- 0.2 V, |1, 2, 3 | All | | 900 | A | | outp

28、uts open, f = 0 MHz | | | | | | | | | | | | | | | | | | | Input capacitance |CI N | VI= 0 V , f = 1.0 MHz | 4 | All | | 8 | pF | | TA= +25C, See 4.3.1c | | | | | | | | | | | | | | | | | | | Output capacitance |COUT| VO= 0 V , f = 1.0 MHz | 4 | All | | 8 | pF | | TA= +25C, See 4.3.1c | | | | | | | |

29、| | | | | | | | | | | Functional tests | | See 4.3.1d. |7, 8A, 8B | All | | | | | | | | | See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBUS CO

30、LUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. | | Conditions | | | | Test |Symbol | -55C TC +125C |Group A |Device | Limits | Unit | | VSS= 0 V |subgroups | types | | | | | 4.5 V VCC 5.5 V | | | | | | | unless otherwise specif

31、ied | | | Min | Max | | | | | 01 | 140 | | Read cycle time |tRC| CL= 30 pF |9, 10, 11 | 02 | 100 | | ns | | See figures 3 and 4 | | 03 | 80 | | | | | | 04 | 50 | | | | | | 05 | 40 | | | | | | 06 | 30 | | | | | | 01 | | 120 | Access time |tA| |9, 10, 11 | 02 | | 80 | ns | | | | 03 | | 65 | | | | | 04

32、 | | 40 | | | | | 05 | | 30 | | | | | 06 | | 20 | | | | | 01,02 | 20 | | Read recovery time |tRR| |9, 10, 11 | 03 | 15 | | ns | | | 04-06 | 10 | | | | | | 01 | 120 | | Read pulse width |tRPW| |9, 10, 11 | 02 | 80 | | ns | | | | 03 | 65 | | | | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | |

33、| | | | | | | Read pulse low to data |tRLZ| |9, 10, 11 | 01-03 | 10 | | ns bus at low-Z | 1/ | | | | | | | | | | 04-06 | 5.0 | | | | | | | | | Write pulse low to data |tWLZ| |9, 10, 11 | 01,02 | 20.0 | | ns bus at low-Z |1/ 2/ | | | 03 | 15 | | | | | | 04 | 10 | | | | | | 05,06 | 5.0 | | | | | | | |

34、 | Data valid from read |tDV| |9, 10, 11 | All | 5.0 | | ns pulse high | | | | | | | | | | | 01 | | 35 | Read pulse high to data |tRHZ| |9, 10, 11 | 02,03 | | 30 | ns bus high-Z | | | | 04 | | 25 | | 1/ | | | 05 | | 20 | | | | | 06 | | 15 | | | | | 01 | 140 | | Write cycle time |tWC| |9, 10, 11 | 02

35、 | 100 | | ns | | | | 03 | 80 | | | | | | 04 | 65 | | | | | | 05 | 40 | | | | | | 06 | 30 | | See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBU

36、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. | | Conditions | | | | Test |Symbol | -55C TC +125C |Group A |Device | Limits | Unit | | VSS= 0 V |subgroups | types | | | | | 4.5 V VCC 5.5 V | | | | | | | unless otherwise sp

37、ecified | | | Min | Max | | | | | 01 | 120 | | Write pulse width |tWPW| CL= 30 pF |9, 10, 11 | 02 | 80 | | ns | | See figures 3 and 4 | | 03 | 65 | | | | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | | | | | | 01,02 | 20 | | Write recovery time |tWR| |9, 10, 11 | 03 | 15 | | ns | | | 04-06 |

38、 10 | | | | | | 01,02 | 40 | | Data setup time |tDS| |9, 10, 11 | 03 | 30 | | ns | | | | 04 | 20 | | | | | | 05 | 18 | | | | | | 06 | 12 | | | | | | | | | Data hold time |tDH| |9, 10, 11 | 01-03 | 10 | | ns | | | 04-06 | 0 | | | | | | 01 | 140 | | Reset cycle time |tRSC| |9, 10, 11 | 02 | 100 | | ns

39、 | | | | 03 | 80 | | | | | | 04 | 50 | | | | | | 05 | 40 | | | | | | 06 | 30 | | | | | | 01 | 120 | | Reset pulse width |tRS| |9, 10, 11 | 02 | 80 | | ns | | | | 03 | 65 | | | | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | | | | | | 01,02 | 20 | | Reset recovery time |tRSR| |9, 10, 11 | 03

40、| 15 | | ns | | | 04-06 | 10 | | | | | | 01 | 120 | | Reset setup time |tRSS| |9, 10, 11 | 02 | 80 | | ns | | | | 03 | 65 | | | 1/ | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | | | | | | 01 | 140 | | Retransmit cycle time |tRTC| |9, 10, 11 | 02 | 100 | | ns | | | | 03 | 80 | | | | | | 04 |

41、 50 | | | | | | 05 | 40 | | | | | | 06 | 30 | | | | | | 01 | 120 | | Retransmit pulse width |tRT| |9, 10, 11 | 02 | 80 | | ns | | | | 03 | 65 | | | | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | | See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking perm

42、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. | | Conditions | | | | Test |Symbol | -55C TC +125C |Group A |De

43、vice | Limits | Unit | | VSS= 0 V |subgroups | types | | | | | 4.5 V VCC 5.5 V | | | | | | | unless otherwise specified | | | Min | Max | | | | | 01,02 | 20 | | Retransmit recovery |tRTR| CL= 30 pF, |9, 10, 11 | 03 | 15 | | ns time | | See figures 3 and 4. | | 04-06 | 10 | | | | | | 01 | | 140 | Res

44、et to empty flag low |tEFL| |9, 10, 11 | 02 | | 100 | ns | | | | 03 | | 80 | | | | | 04 | | 50 | | | | | 05 | | 40 | | | | | 06 | | 30 | | | | | 01-03 | | 60 | ns Read low to empty flag |tREF| |9, 10, 11 | 04,05 | | 30 | low | | | | 06 | | 20 | | | | | 01-03 | | 60 | ns Read high to full flag |tRFF|

45、 |9, 10, 11 | 04 | | 35 | high | | | | 05 | | 30 | | | | | 06 | | 20 | | | | | 01-03 | | 60 | ns Write high to empty |tWEF| |9, 10, 11 | 04 | | 35 | flag high | | | | 05 | | 30 | | | | | 06 | | 20 | | | | | 01-03 | | 60 | ns Write low to full flag |tWFF| |9, 10, 11 | 04 | | 35 | low | | | | 05 | | 3

46、0 | | | | | 06 | | 20 | | | | | 01 | | 140 | Reset to half-full and |tHFH| |9, 10, 11 | 02 | | 100 | ns full flag high |tFFH| | | 03 | | 80 | | | | | 04 | | 50 | | | | | 05 | | 40 | | | | | 06 | | 30 | | | | | 01 | | 120 | |tXOL| |9, 10, 11 | 02 | | 80 | ns Read/write to XO low | | | | 03 | | 65 | |

47、 | | | 04 | | 40 | | | | | 05 | | 30 | | | | | 06 | | 20 | | | | | 01 | | 120 | |tXOH| |9, 10, 11 | 02 | | 80 | ns Read/write to XO high | | | | 03 | | 65 | | | | | 04 | | 40 | | | | | 05 | | 30 | | | | | 06 | | 20 | | | | | 01 | 120 | | XI pulse width |tXI| |9, 10, 11 | 02 | 80 | | ns | | | | 03 | 65 | | | | | | 04 | 40 | | | | | | 05 | 30 | | | | | | 06 | 20 | | | | | | | | | XI recovery time |tXIR| |9, 10, 11 | All | 10 | | ns | | | | | | S