DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT LINEAR SINGLE POWER MOSFET DRIVER MONOLITHIC SILICON《硅单片单电源金属氧化物半导体场效应晶体管驱动器线性微电路》.pdf
《DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT LINEAR SINGLE POWER MOSFET DRIVER MONOLITHIC SILICON《硅单片单电源金属氧化物半导体场效应晶体管驱动器线性微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT LINEAR SINGLE POWER MOSFET DRIVER MONOLITHIC SILICON《硅单片单电源金属氧化物半导体场效应晶体管驱动器线性微电路》.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Redrawn with changes. Add device types 04 and 05. Add case outline H. Editorial changes throughout. 94-03-04 M.A. Frye D Add device types 06 and 07. Table I changes. Editorial changes throughout. 95-01-18 M.A. Frye E Changes in accordance with NO
2、R 5962-R037-96. 96-01-11 M.A. FryeF Changes in accordance with NOR 5962-R072-96. 96-03-15 M.A. Frye G Update boiler plate and incorporate previous 2 NORs. Redrawn. Updated bulletin. -lgt 98-06-26 R. Monnin H Add figure 1 so that a change to symbol “A” dimension can be specified under case outline le
3、tter H. - ro 03-07-25 R. Monnin THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV H H SHET 15 16 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT D
4、RAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-08-
5、16 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-88770 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E452-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD
6、MICROCIRCUIT DRAWING SIZE A 5962-88770 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-3853
7、5, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88770 01 H X Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Dev
8、ice type Generic number Circuit function Output 01 TSC429 Inverting power MOSFET driver 4.5 A dc 02 TSC4429 Inverting power MOSFET driver 4.5 A dc 03 TSC4420 Noninverting power MOSFET driver 4.5 A dc 04 MIC4451 Inverting hi speed, hi current MOSFET driver 12 A dc 05 MIC4452 Noninverting hi speed, hi
9、 current MOSFET driver 12 A dc 06 MIC44R21 Inverting, rad hardened MOSFET driver 9 A dc 07 MIC44R22 Noninverting, rad hardened MOSFET driver 9 A dc 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package sty
10、le H See figure 1 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage (VS). 20 V dc Input voltage range (VIN) : Device 01 VS+ 0.3 V
11、 dc to GND - 0.3 V dc Devices 02, 03, 04, 05 VS+ 0.3 V dc to GND - 5.0 V dc Output current (per pin, capacitance load) : Devices 01 03 6.0 A dc Devices 04 05 12.0 A dc Devices 06 07 9.0 A dc Peak supply current or GND current (per pin) : Devices 01 03 6.0 A dc Devices 04 05 12.0 A dc Devices 06 07 9
12、.0 A dc Storage temperature range -55C to +125C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88770 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.
13、3 Absolute maximum ratings - continued. Power dissipation (PD) : Case outline H 650 mW 1/ Case outline P 800 mW 2/ Case outline 2 1.8 W 3/ Lead temperature (soldering, 10 seconds) +300C Junction temperature range (TJ) -55C to +150C 1.4 Recommended operating conditions. Supply voltage range . 4.5 V d
14、c VS 18 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issu
15、es of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDA
16、RDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise in
17、dicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited here
18、in, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Derate linearly at 6.5 mW/C above TA= +50C. 2/ Derate linearly at 8 mW/C above TA= +50C. 3/ Derate linearly at 18 mW/C abov
19、e TA= +50C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88770 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements.
20、 The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has b
21、een granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications
22、 to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 D
23、esign, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein and figure 1. 3.2.2 Terminal connections. The terminal connec
24、tions shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The elec
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