DLA SMD-5962-86058 REV C-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单块 达林顿晶体管阵列 高电流 直线型微型电路》.pdf
《DLA SMD-5962-86058 REV C-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单块 达林顿晶体管阵列 高电流 直线型微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-86058 REV C-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单块 达林顿晶体管阵列 高电流 直线型微型电路》.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add approved source, CAGE 34333. Add case outline 2. Editorial changes throughout. 87-03-12 M.A. FRYE B Change CAGE code to 67268. Add vendor similar part number for device type 01. Inactive device type 01VX for new design. Change power dissipati
2、on and footnote 2/. Editorial changes throughout. 89-07-27 M. A. FRYE C Drawing updated to reflect current requirements. - ro 02-05-22 R. MONNIN CURRENT CAGE CODE 67268 THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV C C C C C C C C C C OF SHEETS SHEET 1
3、2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY JOSEPH A. KERBY DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY DONALD R. COOL COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH-VOLTA
4、GE, HIGH CURRENT, DARLINGTON TRANSISTOR AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 86-06-28 ARRAYS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 14933 5962-86058 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E376-02 DISTRIBUTION STATEMENT A. Approved for public relea
5、se; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86058 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.
6、This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-86058 01 V X Drawing number Device type (see 1.2.1
7、) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 2803 Eight-gate Darlington transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-183
8、5 and as follows: Outline letter Descriptive designator Terminals Package style V GDIP1-T18 or CDIP2-T18 18 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Output voltage (VCE) 50
9、V dc Input voltage (VIN) 30 V dc Continuous collector current (IC) 500 mA Continuous base current (IB) 25 mA Power dissipation (PD): One darlington pair 1.0 W Total package 2.25 W 1/ Storage temperature range -65C to +150C Junction temperature (TJ) +175C Maximum package power dissipation, TA= +125C
10、600 mW Thermal resistance, junction-to-case (JC): . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case V 75C/W Case 2 130C/W _ 1/ For case V, derate linearly 18.2 mW/C above +25C. For case 2, derate linearly 7.6 mW/C above +25C. Provided by IHSNot for ResaleNo reproduction or networ
11、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86058 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C 2. APPLICAB
12、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense
13、Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-S
14、TD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from
15、 the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however,
16、 supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this dr
17、awing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity
18、approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A
19、 “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case o
20、utlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Logic diagram. The logic diagram shall be as specified on figure 2. Provided by IHSNot for ResaleNo reproduction or networking permitted
21、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86058 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group
22、A subgroups Device type Limits Unit Min Max Output leakage current ICEXVCE= 50 V 1,2,3 01 100 A Collector-emitter saturation voltage VCE(sat)IC= 350 mA, IB= 500 A 1 01 1.6 V IC= 200 mA, IB= 350 A 1.3 IC= 100 mA, IB= 250 A 1.1 IC= 350 mA, IB= 500 A 2 1.8 IC= 200 mA, IB= 350 A 1.5 IC= 100 mA, IB= 250
23、A 1.3 IC= 350 mA, IB= 850 A 3 1.8 IC= 200 mA, IB= 550 A 1.5 IC= 100 mA, IB= 350 A 1.3 Input voltage VIN(ON)VCE 2 V, IC= 200 mA 1,2 01 2.4 V VCE 2 V, IC= 250 mA 2.7 VCE 2 V, IC= 300 mA 3.0 VCE 2 V, IC= 200 mA 3 3.3 VCE 2 V, IC= 250 mA 3.6 VCE 2 V, IC= 300 mA 3.9 Input current IIN(on)VIN= 3.85 V 1,2,3
24、 01 650 1350 A Input current IIN(off)IC= 500 A, TA= +125C 2 01 25 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86058 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-500
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