DLA SMD-5962-86009 REV D-2008 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL BINARY COUNTER MONOLITHIC SILICON《数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带二元二进制计数器》.pdf
《DLA SMD-5962-86009 REV D-2008 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL BINARY COUNTER MONOLITHIC SILICON《数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带二元二进制计数器》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-86009 REV D-2008 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS DUAL BINARY COUNTER MONOLITHIC SILICON《数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带二元二进制计数器》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Convert to Military Drawing format. Add vendor CAGE 27014 for device type 01 87-01-09 N A Hauck B Add case 2 for approved source 27014. Add one approved source 01295 for cases E and 2 87-08-25 N A Hauck C Delete vendor CAGE 18714. Technical and e
2、ditorial changes throughout 91-11-05 M. A. Frye D Update boilerplate to current MIL-PRF-38535 requirements. MAA 08-06-25 Thomas M. Hess REV SHET REV SHET REV STATUS REV D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Jeffery Tunstall DEFENSE SUPPLY CENTER
3、 COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D A Di Cenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N A Hauck AND AGENCIES OF THE DEPARTMENT OF DEFENSE ORIGINAL DRAWING APPROVAL DATE 86-01-29 MICROCIRCUIT, DIGITAL, HIGH-SP
4、EED CMOS, DUAL BINARY COUNTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 86009 SHEET 1 OF 13 DSCC FORM 2234 APR 97 5962-E429-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86009 DEFEN
5、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Numbe
6、r (PIN). The complete PIN is as shown in the following example: 86009 01 E A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC390
7、Dual binary counter with divide by 2 and divide by 5 sections 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrie
8、r 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535,appendix A Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86009 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEE
9、T 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Input clamp diode current (IIK) 20 mA DC output current (per pin) (IOK).
10、 25 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . -500 mW 4/ Lead temperature (soldering 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ). +175C 1.4 Recommended opera
11、ting conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc min. to +6.0 V dc max. Input voltage range (VIN) 0.0 V dc to VCCOutput voltage range (VOUT). 0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall time (tr, tf): VCC = 2.0 V 0 to 500 ns VCC = 4.5 V 0 to 500
12、 ns VCC = 6.0 V 0 to 400 ns Minimum recovery time, reset (trec): For TC = 25C, VCC = 2.0 V 50 ns VCC = 4.5 V 10 ns VCC = 6.0 V 9 ns For TC = -55C / +125C, VCC = 2.0 V 75 ns VCC = 4.5 V 15 ns VCC = 6.0 V 13 ns Minimum width of clock or reset pulse (tw): For TC = 25C, VCC = 2.0 V 85 ns VCC = 4.5 V 17
13、ns VCC = 6.0 V 14 ns For TC = -55C / +125C, VCC = 2.0 V 130 ns VCC = 4.5 V 26 ns VCC = 6.0 V 22 ns Maximum clock frequency (fmax): For TC = 25C, VCC = 2.0 V 5.4 MHz VCC = 4.5 V 27 MHz VCC = 6.0 V 32 MHz For TC = -55C / +125C, VCC = 2.0 V 3.6 MHz VCC = 4.5 V 18 MHz VCC = 6.0 V 21 MHz 1/ Stresses abov
14、e the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the f
15、ull specified VCCrange and case operating temperature range of -55C to +125C. 4/ For TC = +100C to +125C, derate linearly at 12 mW/C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 86009 DEFENSE SUPPLY CENTER COLU
16、MBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified,
17、the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface
18、 Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Do
19、cument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or c
20、ontract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JESD 7A - Standard for Description of 54/74HCXXXX and 54/74HCTXXXX High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.eia.org/ or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.
21、) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREME
22、NTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer o
23、r a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) p
24、lan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML
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