DLA SMD-5962-13211-2013 MICROCIRCUIT LINEAR ULTRA LOW NOISE PRECISION VOLTAGE REFERENCE MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAIL

2、ABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, ULTRA LOW NOISE, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-12-17 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962

3、-13211 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E128-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SC

4、OPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choi

5、ce of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 13211 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.

6、2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit fun

7、ction as follows: Device type Generic number Voltage reference output Circuit function 01 ISL71090SEH-12 1.25 V Radiation hardened ultra low noise, precision voltage reference 02 ISL71090SEH-25 2.5 V Radiation hardened ultra low noise, precision voltage reference 1.2.3 Device class designator. The d

8、evice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline le

9、tter Descriptive designator Terminals Package style X See figure 1 8 Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

10、DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Maximum voltage: VINto GND . -0.5 V to +40 V VINto GND at an LET = 86 MeV/mg/cm2-0.5 V to +36 V VOUTto GND (10 seconds) -0.5 V to VOUT+ 0.5 V Voltag

11、e on any pin to ground -0.5 V to +VOUT+ 0.5 V Voltage on DNC pins No connections permitted to these pins Input voltage slew rate (maximum) . 0.1 V/s Maximum junction temperature (TJMAX) 150C Continuous power dissipation (PD) : TA= +125C . 178 mW TA= +25C . 892 mW Storage temperature range (TSTG) -65

12、C to +150C Thermal resistance, junction to case (JC) . 15C/W 2/ Thermal resistance, junction to ambient (JA) 140C/W 3/ 1.4 Recommended operating conditions. Input voltage (VIN): Device types 01 and 02 4 V to +30 V Operating free-air temperature range (TA) . -55C to +125C 1.5 Radiation features. Maxi

13、mum total dose available (dose rate = 50 300 rads(Si)/s) : Device types 01 and 02 100 krads(Si) 4/ Maximum total dose available (dose rate .010 rad(Si)/s): Device types 01 and 02 . 50 krads(Si) 4/ Single event phenomenon (SEP): No Single event latchup (SEL) occurs at effective LET (see 4.4.4.2) . 86

14、 MeV/mg/cm25/ No Single event burnout (SEB) occurs at effective LET (see 4.4.4.2) . 86 MeV/mg/cm25/ Single event transients (SET) observed that resulted in a recovery time not exceeding 25 s at saturated cross section = 1.48 x 10-4cm2with effective LET (see 4.4.4.2) 86 MeV/mg/cm25/ _ 1/ Stresses abo

15、ve the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For JC, the “case temperature” location is the center of the ceramic on the package underside. 3/ JAis measured with the component moun

16、ted on a high effective thermal conductivity test board in free air. 4/ Device types 01 and 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to

17、 a maximum total dose of 50 krads(Si). 5/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See manufacturers SEE te

18、st report and table IB for more information. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DO

19、CUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF D

20、EFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - L

21、ist of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government public

22、ations. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomen

23、a (SEP) from Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the tex

24、t of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for devic

25、e classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions

26、. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on

27、figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation pa

28、rameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall

29、be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

30、EVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max VOUT accuracy 3/ VOAVOUT= 1.252 V 1 01 -0.05 +0.05 % 2,3 -0.15 +0.15 M,D,P,L,R 1 -0.15

31、 +0.15 VOUT= 2.5 V 1 02 -0.05 +0.05 2,3 -0.15 +0.15 M,D,P,L,R 1 -0.175 +0.175 Output voltage temperature 4/ coefficient TCVOUT1,2,3 01, 02 10 ppm/C Input voltage range 5/ VINVOUT= 1.252 V 1,2,3 01 4.0 30 V VOUT= 2.5 V 02 4.0 30 Supply current IIN 1,2,3 01, 02 1.28 mA Line regulation VOUT/VINVIN= 4.0

32、 V to 30 V, VOUT= 1.252 V 1,2,3 01 18 ppm/V VIN= 4.0 V to 30 V, VOUT= 2.5 V 02 18 Load regulation VOUT/IOUTSourcing: 0 mA IOUT 20 mA 1,2,3 01 55 ppm/mA 02 35 Sinking: -10 mA IOUT 0 mA 02 70 Dropout voltage 6/ VDVOUT= 1.252 V at 10 mA 1,2,3 01 2.25 V VOUT= 2.5 V at 10 mA 02 1.7 1/ Unless otherwise sp

33、ecified, VIN= 5 V and IOUT= 0 for device types 01 and 02. 2/ RHA device types 01 and 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and L for condition D. However, device types 01 and 02 are only tested at the R level in accordan

34、ce with MIL-STD-883, method 1019, condition A and tested at the L level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and Post irradiation values are identical unless otherwise specified in Table IA. When performing post irradiation electrical measurements for any RH

35、A level, TA= +25C. 3/ Post reflow drift can be normally 100 V based on experimental results with devices on FR4 double sided boards. The customer must take this into account when considering the reference voltage after assembly. 4/ Over the specified temperature range. Temperature coefficient is mea

36、sured by the box method whereby the change in VOUTis divided by the temperature range; in this case, -55C to +125C = +180C. This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect this characteristic. 5/ VIN VOUTmeasured at the

37、 point where VOUTdrops 1 mV from the nominal measured value. 6/ Dropout voltage is the minimum VIN VOUTdifferential voltage measured at the point where VOUTdrops 1 mV from VIN= nominal at TA= +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

38、DARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ 2/ 3/ Device types SEP Temperature (TA) Effective linear energy transfer (LET) 01, 02 No SEL +125C 86 MeV/mg/cm2No SEB +125C 86 MeV/m

39、g/cm2SET Observed 4/ +25C 86 MeV/mg/cm21/ For single event phenomena (SEP) test conditions, see 4.4.4.2 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end of line testing. Test plan must be approved by the technical review board and

40、qualifying activity. 3/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. See manufacturers SEE test report for more

41、 information. 4/ Single event transients (SET) observed that resulted in a recovery time not exceeding 25 s at saturated cross section = 1.48 x 10-4cm2with effective LET 86 MeV/mg/cm2. See manufacturers SEE test report for more information. 3.5 Marking. The part shall be marked with the PIN listed i

42、n 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall

43、 still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a ce

44、rtificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm

45、 that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this dra

46、wing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 Case X. FIGURE 1. Case outline. Provided by IHSNot for

47、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-13211 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 Case X continued. Symbol Inches Millimeters Notes Min Max Min Max A 0.087 0.110 2.21

48、 2.79 b 0.015 0.022 0.38 0.56 b1 0.015 0.019 0.38 0.48 c 0.004 0.009 0.10 0.23 c1 0.004 0.007 0.10 0.18 D 0.245 0.265 6.22 6.73 E 0.245 0.265 6.22 6.73 E2 0.170 0.180 4.32 4.57 E3 0.030 - 0.76 - 7 e 0.050 BSC 1.27 BSC k 0.008 0.015 0.20 0.38 3 L 0.325 0.370 8.26 9.40 Q 0.026 0.036 0.66 0.92 8 S1 0.005 - 0.13 - 6 M - 0.0015 - 0.04 N 8 8 NOTES: 1. The U.S. government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound