DLA SMD-5962-07215 REV C-2012 MICROCIRCUIT LINEAR BiCMOS RADIATION HARDENED DUAL HIGH SPEED VOLTAGE COMPARATOR MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to the PD, JC, and JAlimits as specified under paragraph 1.3. - ro 08-01-29 R. HEBER B Make corrections to title block and figure 3. Make changes to paragraphs 1.2.2, 1.5, and A.1.2.2. Delete dose rate burnout, paragraph 4.4.4.2. - r

2、o 10-12-14 C. SAFFLE C Add device type 02. Make changes to paragraphs 1.2.2, 1.5, 4.4.4.1, A.1.2.2, A.1.2.4, Table I, figure 1, and figure 4. Add paragraph A.1.5. - ro 12-01-31 C. SAFFLE REV SHEET REV C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV C C C C C C C C C C C C C C OF SH

3、EETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJE

4、SH PITHADIA APPROVED BY ROBERT M. HEBER MICROCIRCUIT, LINEAR, BiCMOS, RADIATION HARDENED, DUAL HIGH SPEED, VOLTAGE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 07-12-18 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-07215 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E536-11 Provided by IH

5、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class le

6、vels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected

7、 in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 07215 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. De

8、vice classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

9、 non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL7119RH Radiation hardened, dielectrically isolated (DI), BiCMOS dual, high speed, voltage comparator 02 ISL7119EH Radiation hardened dielectrically is

10、olated (DI), BiCMOS dual, high speed, voltage comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 co

11、mpliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style

12、 X CDFP3-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SI

13、ZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Total supply voltage . 36 V Output to negative supply voltage . 36 V Ground to negative supply voltage 25 V Ground to positive supply voltage 18 V Different

14、ial input voltage 5 V Input voltage 15 V 2/ Output short circuit duration 10 seconds 3/ Maximum storage temperature range -65C to 150C Maximum power dissipation (PD) for case outline X: TA= +25C 0.338 W TA= +125C 0.1 W Lead temperature (soldering, 10 seconds) +265C maximum Junction temperature (TJ)

15、+175C maximum Thermal resistance, junction-to-case (JC): Case outline X . 60C/W Thermal resistance, junction-to-ambient (JA): Case outline X . 165C/W 4/ 1.4 Recommended operating conditions. Single supply voltage . 5 V Dual supply voltage . 15 V Ambient operating temperature range (TA) . -55C to +12

16、5C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s): Device type 01 . 300 krad(Si) 5/ Device type 02 . 300 krad (Si) 6/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 50 krad(Si) 6/ Single event latch up (SEL) . No latch up 7/ _ 1/ Stresses

17、 above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For supply voltages less than 15 V, the absolute maximum input voltage is equal to the supply voltage. 3/ Short circuit from the ou

18、tput to +VScan cause excessive heating and eventual destruction. 4/ JAis measured with the component mounted on an evaluation printed circuit (PC) board in free air. 5/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation

19、end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krad(Si) . 6/ The device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specifi

20、ed in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krad(Si), and condition D to a maximum total dose of 50 krad(Si). 7/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking perm

21、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, an

22、d handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPART

23、MENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these doc

24、uments are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,

25、 the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-

26、PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, a

27、ppendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PR

28、F-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The bl

29、ock diagram shall be as specified on figure 2. 3.2.4 Timing diagrams. The timing diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter li

30、mits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subg

31、roups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVE

32、L C SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking

33、the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark.

34、 The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be req

35、uired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The ce

36、rtificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-P

37、RF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of cha

38、nge for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land an

39、d Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class

40、 M. Device class M devices covered by this drawing shall be in microcircuit group number 74 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBU

41、S, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C GND = 0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input offset voltage VIO+VS= 5 V, -VS= 0 V, VCM= 1 V, RS 5

42、 k, 1 01, 02 -4 4 mV RL = 1.4 k pullup to 5 V 2,3 -8 8 M,D,P,L,R,F 1 -8 8 +VS= 5 V, -VS= 0 V, VCM= 3 V, RS 5 k, 1 -4 4 RL = 1.4 k pullup to 5 V 2,3 -8 8 M,D,P,L,R,F 1 -8 8 +VS= 15 V, -VS= -15 V, VCM= 12 V, RS 5 k, 1 -4 4 RL = 1.4 k pullup to 5 V 2,3 -8 8 M,D,P,L,R,F 1 -8 8 +VS= 15 V, -VS= -15 V, VCM

43、= -12 V, RS 5 k, 1 -4 4 RL = 1.4 k pullup to 5 V 2,3 -8 8 M,D,P,L,R,F 1 -8 8 Saturation voltage VSAT+VS= 3.5 V, -VS= -1 V, VIN -8 mV, 1 01, 02 0.55 V ISINK 3.2 mA 2,3 0.65 M,D,P,L,R,F 1 0.65 +VS= 15 V, -VS= -15 V, VIN -8 mV, 1 1.5 ISINK 25 mA 2.3 1.8 M,D,P,L,R,F 1 1.8 See footnotes at end of table.

44、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued.

45、Test Symbol Conditions 1/ -55C TA +125C GND = 0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Common mode rejection ratio CMRR +VS= 15 V, -VS= -15 V, VCM= +12 V, 1 01, 02 80 dB RL= 1.4 k pullup to 5 V 2,3 74 M,D,P,L,R,F 1 74 +VS= 15 V, -VS= -15 V, VCM = -12 V, 1 80 R

46、L= 1.4 k pullup to 5 V 2,3 74 M,D,P,L,R,F 1 74 Input offset current IIO+VS= 5 V, -VS= 0 V, 1 01, 02 75 nA VCM= 1 V 2,3 150 M,D,P,L,R,F 1 150 +VS= 5 V, -VS= 0 V, 1 75 VCM= 3 V 2,3 150 M,D,P,L,R,F 1 150 +VS= 15 V, -VS= -15 V, 1 75 VCM= 12 V 2,3 150 M,D,P,L,R,F 1 150 +VS= 15 V, -VS= -15 V, 1 75 VCM= -1

47、2 V 2,3 150 M,D,P,L,R,F 1 150 Input bias current IBIAS+VS= 5 V, -VS= 0 V, 1 01, 02 500 nA RL= 1.4 k 2,3 1000 M,D,P,L,R,F 1 1000 +VS= 15 V, -VS= -15 V, 1 500 RL= 1.4 k 2,3 1000 M,D,P,L,R,F 1 1000 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

48、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C GND = 0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive supply current ICC+VS= 15 V, -VS= -15 V, 1 01, 02 10 mA ISINK 25 mA 2,3 12 M,D,P,L,R,F 1 12 Negative supply current IEE+VS= 15 V, -VS=