DLA SMD-5962-02546 REV D-2011 MICROCIRCUIT LINEAR ULTRA LOW DISTORTION CURRENT FEEDBACK WIDEBAND OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V devices and Table IIB. - ro 05-08-02 R. MONNIN B Add 1.5 and 3.2.3 for radiation hardened requirements. Make changes to 1.2, Table I, Table IIA, 4.4.4, and add 4.4.4.1. - ro 05-10-25 R. MONNIN C Update drawing as part of 5 year

2、 review. jt 10-09-22 C. SAFFLE D Add device type 02. Add enhanced low dose rate sensitivity (ELDRS) free requirements. Delete footnote 2/ from final electrical row as specified under Table IIA - ro 11-07-19 C. SAFFLE REV SHET REV SHET REV STATUS REV D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6

3、7 8 9 10 11 PMIC N/A PREPARED BY GLENN TRAYLOR DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH R. PITHADIA APPROVED BY RAYM

4、OND MONNIN MICROCIRCUIT, LINEAR, ULTRA LOW DISTORTION, CURRENT FEEDBACK WIDEBAND, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 04-03-04 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-02546 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E419-11 Provided by IHSNot for ResaleNo repr

5、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02546 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of hig

6、h reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN.

7、The PIN is as shown in the following example: 5962 F 02546 01 V P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA

8、marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 De

9、vice type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LMH6702 Ultra low distortion, current feedback wideband, operational amplifier 02 LMH6702 Ultra low distortion, current feedback wideband, operational amplifier 1.2.3 Device clas

10、s designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38

11、535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line Z GDFP1-G10 10 Flat pack with gullw

12、ing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02546

13、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) . 6.75 V dc Common mode input voltage (VCM) . V- to V+ Power dissipation (PD) 2/ . 1 W Junction temperature (TJ) +175C Lead temperature (soldering, 10

14、seconds) (TL) . 300C Storage temperature range -65C TA +150C Thermal resistance, junction-to-ambient (JA): Case P 170C/W ( still air ) 100C/W ( 500 linear feet per min air flow ) Case Z 220C/W ( still air ) 150C/W ( 500 linear feet per min air flow ) Thermal resistance, junction-to-case (JC): Case P

15、 35C/W Case Z 37C/W 1.4 Recommended operating conditions. Supply voltage (VCC) . 5 V dc to 6 V dc Gain range . 1 to 10 Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. 3/ Maximum total dose available (dose rate = 50 300 rads(Si)/s) : Device type 01 300 krads (Si) Maximu

16、m total dose available (dose rate = 10 mrad(Si)/s): Device type 02 300 krads (Si) For device type 02, the manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-ST

17、D-883 method 1019 paragraph 3.13.1.1. Therefore device 02 may be considered ELDRS free. Since the redesigned part did not demonstrate ELDRS per method 1019 and the 01 device may exhibit ELDRS, device type 02 will be added to distinguish it from the 01 device. _ 1/ Absolute maximum ratings are limits

18、 beyond which damage to the device may occur. Operating ratings are conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the electrical characteristics. The guaranteed specification apply only for the t

19、est conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. 2/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX(maximum junction temperature), JA(package junction to ambient therm

20、al resistance), and TA(ambient temperature). The maximum allowable power dissipation at any temperature is PDMAX= (TJMAX TA) / JAor the number given in the absolute maximum ratings, whichever is lower. 3/ For device type 01, this part may be dose rate sensitive in a space environment and may demonst

21、rate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end poin

22、t limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02546 DLA LAND AND MARITIME COLUMBUS, OH

23、IO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of the

24、se documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro

25、nic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Des

26、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

27、ions unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modifi

28、cation in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimension

29、s. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The

30、 terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical per

31、formance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test require

32、ments. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where mar

33、king of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Ma

34、rking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02546 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 D

35、SCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 4/ Unit Min Max DC parameters Input bias current, noninverting IBN1, 2 01,02 -15 15 A 3 -21 21 M,D,P,L,R,F 1 -15 15 Input

36、 bias current, inverting IBI1, 2 01,02 -30 30 A 3 -34 34 M,D,P,L,R,F 1 -30 30 Input offset voltage VIO1, 3 01,02 -4.5 4.5 mV 2 -6.0 6.0 M,D,P,L,R,F 1 -4.5 4.5 Supply current, no load ICCR1 = infinity 1, 2, 3 01,02 15 mA M,D,P,L,R,F 1 15 Power supply rejection ratio PSSR -VCC= -4.5 V to -5.0 V, +VCC=

37、 +4.5 V to +5.0 V 1, 2, 3 01,02 45 dB M,D,P,L,R,F 1 45 AC parameters 3rdharmonic distortion HD3 2 VP-Pat 20 MHz 5/ 4 01,02 -62 dBc Gain flatness peaking, low GFPL 0.1 MHz to 75 MHz, 5/ VOUT 0.5 VP-P4 01,02 0.4 dB Gain flatness peaking, high GFPH 75 MHz, 5/ VOUT 0.5 VP-P4 01,02 2.0 dB Gain flatness r

38、olloff GFRH 75 MHz to 125 MHz, 5/ VOUT 0.5 VP-P4 01,02 0.2 dB 2ndharmonic distortion HD2 2 VP-Pat 20 MHz 5/ 4 01,02 -52 dBc See footnotes at end of table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-025

39、46 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristic - continued. 1/ R1 = 100 , VCC= 5 V dc, AV= +2, feedback resistor ( Rf) = 250 , gain resistor ( Rg) = 250 . 2/ RHA devices supplied to this drawing meet al

40、l levels M, D, P, L, R, and F of irradiation however this device is only tested at the R and F levels (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ For de

41、vice type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For device type 02, this pa

42、rt has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. 4/ The algebraic convention, whereby the most negative value is a minimum and most positive

43、 is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 5/ This parameter is not post irradiation tested. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required

44、in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of th

45、is drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an ap

46、proved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of confo

47、rmance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA o

48、f change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircu