DLA SMD-5962-02544 REV A-2004 MICROCIRCUIT LINEAR LOW NOISE WIDEBAND OPERATIONAL AMPLIFIER MONOLITHIC SILICON《单片硅线性微电路低噪声宽带运算放大器》.pdf

《DLA SMD-5962-02544 REV A-2004 MICROCIRCUIT LINEAR LOW NOISE WIDEBAND OPERATIONAL AMPLIFIER MONOLITHIC SILICON《单片硅线性微电路低噪声宽带运算放大器》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-02544 REV A-2004 MICROCIRCUIT LINEAR LOW NOISE WIDEBAND OPERATIONAL AMPLIFIER MONOLITHIC SILICON《单片硅线性微电路低噪声宽带运算放大器》.pdf（10页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Replace case outline X with case outline Z as specified under 1.2.4. - ro 04-06-01 R. MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STA

2、NDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, LOW NOISE, WIDEBAND, OPERATIONAL AMPLIFIER, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROV

3、AL DATE 03-09-04 MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-02544 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E302-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted withou

4、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes

5、Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the fo

6、llowing example: 5962 - 02544 01 Q P X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-

7、PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device typ

8、e(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LMH6624 Low noise, wideband, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requi

9、rements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MI

10、L-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line Z 1/ GDFP1-G10 10 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A f

11、or device class M. _ 1/ The X letter was originally assigned to the package GDFP1-G-10. However, no parts were shipped with this designator. Outline letter Z assignment conforms to manufacturers package identifier. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

12、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 6 V dc Common mode input voltage (VCM) +V - -V Differential input voltage (VIN) 1.

13、2 V Maximum power dissipation (PD) . 1.0 W 2/ Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Storage temperature range -65C TA +150C Thermal resistance, junction-to-case (JC) : Case P 17C/W Case Z 20C/W Thermal resistance, junction-to-ambient (JA) : Case P 130C/W (sti

14、ll air flow) 70C/W (500 linear feet per minute air flow) Case Z 180C/W (still air flow) 115C/W (500 linear feet per minute air flow) 1.4 Recommended operating conditions. Supply voltage (VS) 5 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specific

15、ation, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standard

16、s (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro

17、nic Component Case Outlines. _ 1/ Absolute maximum ratings are limits beyond which damage to the device may occur. Operating ratings are conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the electric

18、al characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated within the listed test conditions. 2/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ

19、max (maximum junction temperature), thetaJA(package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax TA) / thetaJAor the number given in the absolute maximum ratings, whichever is lower. Provided by IHS

20、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard M

21、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence.

22、In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements.

23、The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The

24、individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535

25、 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance chara

26、cteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The e

27、lectrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For pack

28、ages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance w

29、ith MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as r

30、equired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of complian

31、ce shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, f

32、or device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-P

33、RF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as d

34、efined in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Elec

35、trical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Static and dc tests Input bias current IIN1,2,3 01 -20 +20 A Input offset voltage VIO1 01 -0.8 +0.8 mV 2,3 -1 +1 Supply current ISRL= Infinite 1

36、,2 01 16 mA 3 18 Power supply rejection ratio PSRR +VS= +4.0 V to +5.0 V, -VS= -4.0 V to -5.0 V 1,2,3 01 75 dB Open loop gain AOL 4 01 77 dB 5,6 72 Frequency domain tests Small signal bandwidth SSBW -3 dB bandwidth, 3/ VOUT 0.4 VPP9 01 75 MHz Gain flatness peaking low GFP 0.1 MHz to 30 MHz, 3/ VOUT

37、0.4 VPP9 01 0.7 dB Gain flatness rolloff GFP 0.1 MHz to 30 MHz, 3/ VOUT 0.4 VPP9 01 1.0 dB Distortion and noise tests 2 nd harmonic distortion HD2 1 VPPat 10 MHz 3/ 9 01 -48 dBc 3 rd harmonic distortion HD3 1 VPPat 10 MHz 3/ 9 01 -65 dBc 1/ Unless otherwise specified, VS= 5 V dc, AV = +20, load resi

38、stance (RL) = 100 , feedback resistance (RF) = 500 and gain setting resistance (RG) = 26.1 . 2/ The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device

39、 terminal. 3/ Group A testing only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01

40、 Case outlines P Z Terminal number Terminal symbol 1 NC NC 2 VINVVINV3 VNON-INVVNON-INV4 -VS-VS5 NC NC 6 VOUTNC 7 +VSNC 8 NC VOUT9 - +VS10 - NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDAR

41、D MICROCIRCUIT DRAWING SIZE A 5962-02544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufactu

42、rers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535

43、, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affe

44、ct the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior

45、 to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of

46、MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipa

47、tion, as applicable, in accordance with the intent specified in test method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and

48、test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electr