DLA SMD-5962-02542 REV C-2012 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add a new footnote under paragraph 1.5 and Table I. - ro 05-08-08 R. MONNIN B Correct paragraph 1.5, delete dose rate latch up and add single event latchup (SEL) information. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. Ad

2、d paragraphs 2.2, 6.7, and Table IB. Delete paragraphs 4.4.4.2 Neutron testing, 4.4.4.3 Dose rate latchup testing, and 4.4.4.4 Dose rate burnout. - ro 10-10-27 C. SAFFLE C Add device type 02. Make changes to paragraphs 1.2.2, 1.5, 3.2.4, 4.4.4.1, A.1.2.2, A.1.2.4, Table IA, and figure 1. Add paragra

3、ph A.1.5. Delete figure 3 radiation exposure circuit. - ro 12-03-22 C. SAFFLE REV SHEET REV C C C C C C SHEET 15 16 17 18 19 20 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-399

4、0 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILI

5、CON DRAWING APPROVAL DATE 02-08-30 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-02542 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E001-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND A

6、ND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finish

7、es are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02542 01 V X C Federal stock class designator RHA designator (see 1

8、.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device

9、 class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit functio

10、n 01 ISL7124SRH Radiation hardened, dielectrically isolated, quad, operational amplifier 02 ISL7124SEH Radiation hardened, dielectrically isolated, quad, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as fol

11、lows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case out

12、line(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by

13、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between (+VCCand -VCC) . 35 V

14、 dc Input voltage range (VIN) -0.3 V dc to 33 V dc Power dissipation (PD) 0.48 W Junction temperature (TJ) . +175C maximum Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +265C maximum Thermal resistance, junction-to-case (JC) . 16C/W Thermal resistance, junction-t

15、o-ambient (JA) 105C/W 1.4 Recommended operating conditions. Supply voltage range +5 V dc to +30 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 2/ Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 . 300 krads(Si) 2/ Device type 02 . 30

16、0 krads(Si) 3/ Maximum total dose available (dose rate 10 mrad(Si)/s): Device type 02 50 krads(Si) 3/ The manufacturer supplying RHA device types 01 and 02 on this drawing has performed characterization testing to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) i

17、n accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a level of 50 krads(Si). The manufacturer will perform only high dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, condition A f

18、or device type 01. The manufacturer will perform high dose rate and low dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, conditions A and D for device type 02. Single event phenomenon (SEP) effective linear energy transfer threshold (LET): Singl

19、e event transient (SET) ( VO 1 V ) 36 MeV/mg/cm24/ Single event latch up (SEL) . No latch up 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The manufacturer suppl

20、ying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for t

21、he conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si). 3/ The manufacturer supplying device type 02 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose

22、 rate sensitivity (ELDRS) at a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si)

23、. 4/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but, are not production tested. See manufacturers SEE test report for more information. 5/ Devices use dielectrically isolated (DI) technology and latch-up is physi

24、cally not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government

25、specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MI

26、L-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microci

27、rcuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. T

28、he following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) I

29、nduced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text o

30、f this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device c

31、lasses Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class

32、 M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and phys

33、ical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spe

34、cified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring acti

35、vity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristi

36、cs and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical

37、 test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire S

38、MD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device cla

39、ss M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6

40、 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer

41、in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and

42、V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A sha

43、ll be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affec

44、ts this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made avai

45、lable onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without li

46、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Dev

47、ice type Limits Unit Min Max Input offset voltage VIO+VCC= 15 V, -VCC= -15 V, 1,2,3 01, 02 -10 10 mV VCM= 0 V M,D,P,L,R,F 1 -10 10 Input bias current +IIBP+VCC= 15 V, 1,2 01, 02 -300 300 nA -VCC= -15 V, VCM= 0 V 3 -400 400 M,D,P,L,R,F 1 -400 400 -IIBN+VCC= 15 V, 1,2 -300 300 -VCC= -15 V, VCM= 0 V 3

48、-400 400 M,D,P,L,R,F 1 -400 400 Input offset current IIO+VCC= 15 V, -VCC= -15 V, 1,2,3 01, 02 -100 100 nA VCM= 0 V M,D,P,L,R,F 1 -150 150 Large signal voltage gain AVOL+VCC= 15 V, -VCC= -15 V, 4,5,6 01, 02 30 V/mV VOUT= -7.5 V to 7.5 V, RL= 2 k M,D,P,L,R,F 4 20 +VCC= 15 V, -VCC= -15 V, 4,5,6 30 VOUT= -7.5 V to 7.5 V, RL= 10 k M,D,P,L,R,F 4 20 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02542 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE