DLA MIL-STD-883 J CHANGE 1-2013 TEST METHOD STANDARD MICROCIRCUITS.pdf
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1、 MIL-STD-883J w/CHANGE 1 7 November 2013 SUPERSEDING MIL-STD-883J 7 June 2013 DEPARTMENT OF DEFENSE TEST METHOD STANDARD MICROCIRCUITS AMSC N/A FSC 5962 This document and process conversion measures necessary to comply with this revision shall be Completed by 6 May 2014 INCH - POUND Provided by IHSN
2、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense. 2. Comment, suggestions, or questions on this document should be addressed to: Comm
3、ander, Defense Logistics Agency, ATTN: DLA Land and Maritime - VA, P.O. Box 3990, Columbus, OH 43218-3990, or by email to STD883dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at: https:/assist.dla.mil. S
4、UMMARY OF CHANGE 1 MODIFICATIONS 1. Method 2003, Solderability, has added requirements for lead testing of Column Grid Array and Ball Grid Array packages. 2. A new Method 2038 has been added with procedures for destructive lead pull test of solder column packages. *Provided by IHSNot for ResaleNo re
5、production or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 iii CONTENTS PARAGRAPH Page 1. SCOPE . 1 1.1 Purpose . 1 1.2 Intended use of or reference to MIL-STD-883 1 2. APPLICABLE DOCUMENTS . 3 2.1 General . 3 2.2 Government documents . 3 2.3 Non-Government publications
6、4 2.4 Order of precedence . 5 3. ABBREVIATIONS, SYMBOLS, AND DEFINITIONS . 6 3.1 Abbreviations, symbols, and definitions . 6 4. GENERAL REQUIREMENTS 8 4.1 Numbering system 8 4.2 Test results . 9 4.3 Test sample disposition 9 4.4 Orientation 9 4.5 Test conditions 12 4.6 General precautions . 14 4.7 R
7、ecycled, recovered, and environmentally preferable materials .14 5. DETAIL REQUIREMENTS . 15 6. NOTES 16 FIGURES FIGURE 1. Orientation of noncylindrical microelectronic devices to direction of applied force 10 2. Orientation of cylindrical microelectronic device to direction of applied force 11 Prov
8、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 iv TEST METHODS METHOD NO. ENVIRONMENTAL TESTS 1001 Barometric pressure, reduced (altitude operation) 1002 Immersion 1003 Insulation resistance 1004.7 Moisture resistance 1005.9 Stea
9、dy state life 1006 Intermittent life 1007.1 Agree life 1008.2 Stabilization bake 1009.8 Salt atmosphere (corrosion) 1010.8 Temperature cycling 1011.9 Thermal shock 1012.1 Thermal characteristics 1013 Dew point 1014.14 Seal 1015.10 Burn-in test 1016.2 Life/reliability characterization tests 1017.3 Ne
10、utron irradiation 1018.7 Internal gas analysis 1019.9 Ionizing radiation (total dose) test procedure 1020.1 Dose rate induced latchup test procedure 1021.3 Dose rate upset testing of digital microcircuits 1022 Mosfet threshold voltage 1023.3 Dose rate response of linear microcircuits 1030.2 Preseal
11、burn-in 1031 Thin film corrosion test 1032.1 Package induced soft error test procedure (due to alpha particles) 1033 Endurance life test 1034.1 Die penetrant test (for plastic devices) MECHANICAL TESTS 2001.3 Constant acceleration 2002.5 Mechanical shock 2003.11 Solderability 2004.7 Lead integrity20
12、05.2 Vibration fatigue 2006.1 Vibration noise 2007.3 Vibration, variable frequency 2008.1 Visual and mechanical 2009.11 External visual 2010.13 Internal visual (monolithic) 2011.9 Bond strength (destructive bond pull test) 2012.9 Radiography 2013.1 Internal visual inspection for DPA 2014 Internal vi
13、sual and mechanical 2015.14 Resistance to solvents 2016 Physical dimensions 2017.10 Internal visual (hybrid) 2018.6 Scanning electron microscope (SEM) inspection of metallization 2019.9 Die shear strength 2020.9 Particle impact noise detection test *Provided by IHSNot for ResaleNo reproduction or ne
14、tworking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 v TEST METHODS METHOD NO. MECHANICAL TESTS 2021.3 Glassivation layer integrity 2022.3 Wetting balance solderability 2023.7 Nondestructive bond pull 2024.2 Lid torque for glass-frit-sealed packages 2025.4 Adhesion of lead finish
15、2026 Random vibration 2027.2 Substrate attach strength 2028.4 Pin grid package destructive lead pull test 2029.1 Ceramic chip carrier bond strength 2030.2 Ultrasonic inspection of die attach 2031.1 Flip chip pull-off test 2032.2 Visual inspection of passive elements 2035 Ultrasonic inspection of TAB
16、 bonds 2036.1 Resistance to soldering heat 2037 X-Ray Fluorescence (XRF) Scan for Tin (Sn)-Lead (Pb) Content Analysis 2038 Solder Column Package Destructive Lead Pull Test ELECTRICAL TESTS (DIGITAL) 3001.1 Drive source, dynamic 3002.1 Load conditions 3003.1 Delay measurements 3004.1 Transition time
17、measurements 3005.1 Power supply current 3006.1 High level output voltage 3007.1 Low level output voltage 3008.1 Breakdown voltage, input or output 3009.1 Input current, low level 3010.1 Input current, high level 3011.1 Output short circuit current 3012.1 Terminal capacitance 3013.1 Noise margin mea
18、surements for digital microelectronic devices 3014 Functional testing 3015.9 Electrostatic discharge sensitivity classification 3016.1 Activation time verification 3017 Microelectronics package digital signal transmission 3018 Crosstalk measurements for digital microelectronic device packages 3019.1
19、 Ground and power supply impedance measurements for digital microelectronics device packages 3020 High impedance (off-state) low-level output leakage current 3021 High impedance (off-state) high-level output leakage current 3022 Input clamp voltage 3023.2 Static latch-up measurements for digital CMO
20、S microelectronic devices 3024 Simultaneous switching noise measurements for digital microelectronic devices ELECTRICAL TESTS (LINEAR) 4001.1 Input offset voltage and current and bias current 4002.1 Phase margin and slew rate measurements 4003.1 Common mode input voltage range Common mode rejection
21、ratio Supply voltage rejection ratio 4004.2 Open loop performance 4005.1 Output performance 4006.1 Power gain and noise figure 4007 Automatic gain control range *Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 vi TEST METHODS
22、METHOD NO. TEST PROCEDURES 5001 Parameter mean value control 5002.1 Parameter distribution control 5003 Failure analysis procedures for microcircuits 5004.12 Screening procedures 5005.16 Qualification and quality conformance procedures 5006 Limit testing 5007.8 Wafer lot acceptance 5008.9 Test proce
23、dures for hybrid and multichip microcircuits 5009.1 Destructive physical analysis 5010.4 Test procedures for custom monolithic microcircuits 5011.6 Evaluation and acceptance procedures for polymeric adhesives. 5012.1 Fault coverage measurement for digital microcircuits. 5013.1 Wafer fabrication cont
24、rol and wafer acceptance procedures for processed GaAs wafers Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 1 1. SCOPE 1.1 Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectro
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