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    DLA MIL-STD-883 J CHANGE 1-2013 TEST METHOD STANDARD MICROCIRCUITS.pdf

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    DLA MIL-STD-883 J CHANGE 1-2013 TEST METHOD STANDARD MICROCIRCUITS.pdf

    1、 MIL-STD-883J w/CHANGE 1 7 November 2013 SUPERSEDING MIL-STD-883J 7 June 2013 DEPARTMENT OF DEFENSE TEST METHOD STANDARD MICROCIRCUITS AMSC N/A FSC 5962 This document and process conversion measures necessary to comply with this revision shall be Completed by 6 May 2014 INCH - POUND Provided by IHSN

    2、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense. 2. Comment, suggestions, or questions on this document should be addressed to: Comm

    3、ander, Defense Logistics Agency, ATTN: DLA Land and Maritime - VA, P.O. Box 3990, Columbus, OH 43218-3990, or by email to STD883dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at: https:/assist.dla.mil. S

    4、UMMARY OF CHANGE 1 MODIFICATIONS 1. Method 2003, Solderability, has added requirements for lead testing of Column Grid Array and Ball Grid Array packages. 2. A new Method 2038 has been added with procedures for destructive lead pull test of solder column packages. *Provided by IHSNot for ResaleNo re

    5、production or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 iii CONTENTS PARAGRAPH Page 1. SCOPE . 1 1.1 Purpose . 1 1.2 Intended use of or reference to MIL-STD-883 1 2. APPLICABLE DOCUMENTS . 3 2.1 General . 3 2.2 Government documents . 3 2.3 Non-Government publications

    6、4 2.4 Order of precedence . 5 3. ABBREVIATIONS, SYMBOLS, AND DEFINITIONS . 6 3.1 Abbreviations, symbols, and definitions . 6 4. GENERAL REQUIREMENTS 8 4.1 Numbering system 8 4.2 Test results . 9 4.3 Test sample disposition 9 4.4 Orientation 9 4.5 Test conditions 12 4.6 General precautions . 14 4.7 R

    7、ecycled, recovered, and environmentally preferable materials .14 5. DETAIL REQUIREMENTS . 15 6. NOTES 16 FIGURES FIGURE 1. Orientation of noncylindrical microelectronic devices to direction of applied force 10 2. Orientation of cylindrical microelectronic device to direction of applied force 11 Prov

    8、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 iv TEST METHODS METHOD NO. ENVIRONMENTAL TESTS 1001 Barometric pressure, reduced (altitude operation) 1002 Immersion 1003 Insulation resistance 1004.7 Moisture resistance 1005.9 Stea

    9、dy state life 1006 Intermittent life 1007.1 Agree life 1008.2 Stabilization bake 1009.8 Salt atmosphere (corrosion) 1010.8 Temperature cycling 1011.9 Thermal shock 1012.1 Thermal characteristics 1013 Dew point 1014.14 Seal 1015.10 Burn-in test 1016.2 Life/reliability characterization tests 1017.3 Ne

    10、utron irradiation 1018.7 Internal gas analysis 1019.9 Ionizing radiation (total dose) test procedure 1020.1 Dose rate induced latchup test procedure 1021.3 Dose rate upset testing of digital microcircuits 1022 Mosfet threshold voltage 1023.3 Dose rate response of linear microcircuits 1030.2 Preseal

    11、burn-in 1031 Thin film corrosion test 1032.1 Package induced soft error test procedure (due to alpha particles) 1033 Endurance life test 1034.1 Die penetrant test (for plastic devices) MECHANICAL TESTS 2001.3 Constant acceleration 2002.5 Mechanical shock 2003.11 Solderability 2004.7 Lead integrity20

    12、05.2 Vibration fatigue 2006.1 Vibration noise 2007.3 Vibration, variable frequency 2008.1 Visual and mechanical 2009.11 External visual 2010.13 Internal visual (monolithic) 2011.9 Bond strength (destructive bond pull test) 2012.9 Radiography 2013.1 Internal visual inspection for DPA 2014 Internal vi

    13、sual and mechanical 2015.14 Resistance to solvents 2016 Physical dimensions 2017.10 Internal visual (hybrid) 2018.6 Scanning electron microscope (SEM) inspection of metallization 2019.9 Die shear strength 2020.9 Particle impact noise detection test *Provided by IHSNot for ResaleNo reproduction or ne

    14、tworking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 v TEST METHODS METHOD NO. MECHANICAL TESTS 2021.3 Glassivation layer integrity 2022.3 Wetting balance solderability 2023.7 Nondestructive bond pull 2024.2 Lid torque for glass-frit-sealed packages 2025.4 Adhesion of lead finish

    15、2026 Random vibration 2027.2 Substrate attach strength 2028.4 Pin grid package destructive lead pull test 2029.1 Ceramic chip carrier bond strength 2030.2 Ultrasonic inspection of die attach 2031.1 Flip chip pull-off test 2032.2 Visual inspection of passive elements 2035 Ultrasonic inspection of TAB

    16、 bonds 2036.1 Resistance to soldering heat 2037 X-Ray Fluorescence (XRF) Scan for Tin (Sn)-Lead (Pb) Content Analysis 2038 Solder Column Package Destructive Lead Pull Test ELECTRICAL TESTS (DIGITAL) 3001.1 Drive source, dynamic 3002.1 Load conditions 3003.1 Delay measurements 3004.1 Transition time

    17、measurements 3005.1 Power supply current 3006.1 High level output voltage 3007.1 Low level output voltage 3008.1 Breakdown voltage, input or output 3009.1 Input current, low level 3010.1 Input current, high level 3011.1 Output short circuit current 3012.1 Terminal capacitance 3013.1 Noise margin mea

    18、surements for digital microelectronic devices 3014 Functional testing 3015.9 Electrostatic discharge sensitivity classification 3016.1 Activation time verification 3017 Microelectronics package digital signal transmission 3018 Crosstalk measurements for digital microelectronic device packages 3019.1

    19、 Ground and power supply impedance measurements for digital microelectronics device packages 3020 High impedance (off-state) low-level output leakage current 3021 High impedance (off-state) high-level output leakage current 3022 Input clamp voltage 3023.2 Static latch-up measurements for digital CMO

    20、S microelectronic devices 3024 Simultaneous switching noise measurements for digital microelectronic devices ELECTRICAL TESTS (LINEAR) 4001.1 Input offset voltage and current and bias current 4002.1 Phase margin and slew rate measurements 4003.1 Common mode input voltage range Common mode rejection

    21、ratio Supply voltage rejection ratio 4004.2 Open loop performance 4005.1 Output performance 4006.1 Power gain and noise figure 4007 Automatic gain control range *Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 vi TEST METHODS

    22、METHOD NO. TEST PROCEDURES 5001 Parameter mean value control 5002.1 Parameter distribution control 5003 Failure analysis procedures for microcircuits 5004.12 Screening procedures 5005.16 Qualification and quality conformance procedures 5006 Limit testing 5007.8 Wafer lot acceptance 5008.9 Test proce

    23、dures for hybrid and multichip microcircuits 5009.1 Destructive physical analysis 5010.4 Test procedures for custom monolithic microcircuits 5011.6 Evaluation and acceptance procedures for polymeric adhesives. 5012.1 Fault coverage measurement for digital microcircuits. 5013.1 Wafer fabrication cont

    24、rol and wafer acceptance procedures for processed GaAs wafers Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 1 1. SCOPE 1.1 Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectro

    25、nic devices suitable for use within Military and Aerospace electronic systems including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations; mechanical and electrical tests; workmanship and training pro

    26、cedures; and such other controls and constraints as have been deemed necessary to ensure a uniform level of quality and reliability suitable to the intended applications of those devices. For the purpose of this standard, the term “devices“ includes such items as monolithic, multichip, film and hybr

    27、id microcircuits, microcircuit arrays, and the elements from which the circuits and arrays are formed. This standard is intended to apply only to microelectronic devices. The test methods, controls, and procedures described herein have been prepared to serve several purposes: a. To specify suitable

    28、conditions obtainable in the laboratory and at the device level which give test results equivalent to the actual service conditions existing in the field, and to obtain reproducibility of the results of tests. The tests described herein are not to be interpreted as an exact and conclusive representa

    29、tion of actual service operation in any one geographic or outer space location, since it is known that the only true test for operation in a specific application and location is an actual service test under the same conditions. b. To describe in one standard all of the test methods of a similar char

    30、acter which now appear in the various joint-services and NASA microelectronic device specifications, so that these methods may be kept uniform and thus result in conservation of equipment, manhours, and testing facilities. In achieving this objective, it is necessary to make each of the general test

    31、s adaptable to a broad range of devices. c. To provide for a level of uniformity of physical, electrical and environmental testing; manufacturing controls and workmanship; and materials to ensure consistent quality and reliability among all devices screened in accordance with this standard. 1.2 Inte

    32、nded use of or reference to MIL-STD-883. When this document is referenced or used in conjunction with the processing and testing of JAN devices in conformance with the requirements of appendix A of MIL-PRF-38535, QML devices in conformance with MIL-PRF-38535 or non-JAN devices in accordance with 1.2

    33、.1 or 1.2.2 herein, such processing and testing is required to be in full conformance with all the applicable general requirements and those of the specifically referenced test methods and procedures. For contracts negotiated prior to 31 December 1984, device types that have been classified as manuf

    34、acturers 883 (B or S) product prior to 31 December 1984 are not required to meet 1.2.1 or 1.2.2. Existing contracts as of the 31 December 1984, previously negotiated add-ons to these contracts, and future spares for these contracts may continue to use device types which were classified as manufactur

    35、ers 883 (B or S) prior to 31 December 1984. New contracts, and any device types classified as compliant to MIL-STD-883 after 31 December 1984 are required to comply with 1.2.1. Any devices meeting only the provisions of 1.2.2 are noncompliant to MIL-STD-883. Provided by IHSNot for ResaleNo reproduct

    36、ion or networking permitted without license from IHS-,-,-MIL-STD-883J w/CHANGE 1 21.2.1 Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices. When any manufacturer, contractor, subcontractor, or original equipment manufacturer requires or claims a non-JAN part complian

    37、t with MIL-STD-883, all provisions of Appendix A of MIL-PRF-38535 are required to be met. In addition, manufacturers that have produced or are producing products in accordance with 1.2.1a are subject to a Government compliance validation audit on a drop-in basis with a minimum of notice. Such proces

    38、sing and testing are required to be in compliance with all of the applicable general controls and requirements defined herein and those of the specifically referenced test methods and procedures with no reinterpretations, deviations or omissions except as specifically allowed in the device specifica

    39、tion or standard microcircuit drawing covering the same generic device. Deviations specifically granted in the device specification or standard microcircuit drawing may also be applied to devices manufactured in the same process, to the same design criteria, and using elements of the same microcircu

    40、it group as those used for devices covered by the device specification or standard microcircuit drawing. Such reference include the following: Manufacturers who use MIL-STD-883 in device marking, or make statements in applicable certificates of conformance that parts are compliant with MIL-STD-883,

    41、or make statements in advertisements or in published brochures or other marketing documents that parts provided are compliant with MIL-STD-883. Contractors, sub-contractors, or original equipment manufacturers who prepare vendor item drawings, (previously called Specification Control drawings), or S

    42、elected Item drawings which require compliance with MIL-STD-883, or invoke it in its entirety as the applicable standard (see 1.2.2 for noncompliant devices). a. Custom monolithic, non-JAN multichip and all other non-JAN microcircuits except non-JAN hybrids described or implied to be compliant with

    43、methods 5004 and 5005 or 5010 of MIL-STD-883 are required to meet all of the non-JAN requirements of Appendix A of MIL-PRF-38535. b. Hybrid microcircuits described as compliant or multichip microcircuits described as compliant to MIL-PRF-38534 are required to meet all the requirements of MIL-PRF-385

    44、34 (or equivalent procedures/ requirements of reciprocal listing provisions for product of other nations based on existing international agreements): 1.2.2 Provisions for the use of MIL-STD-883 in conjunction with non-compliant non -JAN devices. Any device that is processed with deviations and which

    45、 is not processed in compliance with the provisions of 1.2.1 defined herein cannot be claimed to be compliant and cannot be marked “/883“, “/883B“, “/883S“, or any variant thereof. All applicable documentation (including device specifications or manufacturers data sheets and responses to RFQs invoki

    46、ng MIL-STD-883) are required to clearly and specifically define any and all areas of nonconformance and identify them as deviations in language that is not subject to misinterpretation by the acquiring authority. If the contract or order specifically requires compliance with, equivalence to, or a pr

    47、oduct that is equal to or better than MIL-STD-883 class B or class S, any exceptions taken to the requirements of the referenced quality level (i.e., 1.2.1 above) prohibit the manufacturer from claiming or implying equivalence to that level. Specific reference to one or more MIL-STD-883 method(s) on

    48、 a stand-alone basis requires compliance to only the specifically referenced method(s). Such devices are not considered compliant in accordance with 1.2.1 above. However, compliance with only the test procedures contained in test methods 5004, 5005, and 5010 on a stand-alone basis (without specifying compliance or noncompliance to 1.2.1) does not satisfy the requirement for form, fit, and function defined in MIL-PRF-38535 for configuration items, and any reference to these methods on a stand alone basis requires compliance to all the provisions of 1.2.1. Provided by IHSNot for ResaleNo


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