DLA MIL-PRF-19500 768 A-2013 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER TYPES 1N7066 1N7067 1N7068 1N7066US 1N7067US AND 1N7068US JAN JANTX JANTXV AND JA.pdf

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1、 MIL-PRF-19500/768A 22 November 2013 SUPERSEDING MIL-PRF-19500/768 10 July 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N7066, 1N7067, 1N7068, 1N7066US, 1N7067US, AND 1N7068US, JAN, JANTX, JANTXV, AND JANS This specification i

2、s approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, ultra fast

3、 recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 for axial lead device and figure 2 for surface mount US device. 1.3 Maximum ratings. Unless otherwise specified, TA=

4、 +25C. 1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). TSTG= TJ(max)= -65C to +175C. * 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Types VRWMIOTL +55C L = .125 in. (3.175 mm) or TEC +100C (1) (2) IFSMat +25C operating at IOtp= 8.3

5、 ms trrRJLat L = .125 in. (3.175 mm) RJECA A(pk) ns C/W C/W 1N7066, US 1N7067, US 1N7068, US 100 150 200 10 10 10 350 350 350 30 30 30 8 8 8 4.5 4.5 4.5 (1) Axial lead, derate at 83.3 mA/C above rated TL. (2) Surface mount, derate at 133.3 mA/C above rated TEC. AMSC N/A FSC 5961 INCH-POUND Comments,

6、 suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Onli

7、ne database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 2 * 1.4 Primary

8、electrical characteristics. Unless otherwise specified, TA= +25C. Types VBR at 100 A, pulse 20 ms IR1at VR= VRWMTA= +25C, pulsed VR 20 ms IR2at VR= VRWMTA= +125C, pulsed VR 20 ms Volts uA uA 1N7066, US 1N7067, US 1N7068, US 110 165 220 1.0 1.0 1.0 100 100 100 2. APPLICABLE DOCUMENTS 2.1 General. The

9、 documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of

10、 this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards,

11、and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF D

12、EFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order o

13、f precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific ex

14、emption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 3 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max BD .135 .165 3.43 4.19 4 BL .135 .155 3.43 3.94 3 LD .036 .042 0.91 1.07 3 LL .900 1.30 22.86 33.

15、02 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode bo

16、dy and extending .050 inch (1.27 mm) maximum onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted with

17、out license from IHS-,-,-MIL-PRF-19500/768A 4 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max BD .172 .180 4.37 4.57 BL .180 .220 4.57 5.58 ECT .020 .028 0.51 0.71 S .002 0.05 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-

18、solder dip. 4. Minimum clearance of diode body to mounting surface on all orientations. 5. Cathode marking to be either in color band or a color dot on the face of the end tab. 6. Color dots will be .020 inch (0.51 mm) diameter minimum and shall not lie within .020 inch (0.51 mm) of the mounting sur

19、face. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of US surface mount family. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 5 3. REQUIREMENTS 3.1 General. The individu

20、al item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list

21、 (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: EC End-cap. I(BR) Current for testing breakdown voltage. Vfr Forward recovery voltage. 3.4 Interface

22、 and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 and 2 herein. 3.4.1 Diode construction. These devices shall be constructed utilizing high temperature metallurgical bonding between both sides of the silicon die and terminal pins. M

23、etallurgical bond shall be in accordance with the requirements of category I, appendix A of MIL-PRF-19500. No point contacts are permitted. Silver button dumet design is prohibited. 3.4.1.1 Surface mount. US version devices shall be structurally identical to the non-surface mount devices except for

24、lead terminations. 3.4.2 Lead finish. Unless otherwise specified, lead or end-cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3 Lead material. Unless otherw

25、ise specified, lead or end-cap material shall be in accordance with Appendix H of MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of material is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.5.1 Mark

26、ing of US versions. For US versions only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the devices shall appear on the label of the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color

27、band to denote the cathode end. Alternately, for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. No color coding will be permitted. 3.6 Electrical performance characteristics. Unless otherwise specified herein,

28、the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be unif

29、orm in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requireme

30、nts specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.

31、2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not p

32、erformed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurem

33、ents shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) Measurements JANS level JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 5 Not

34、 applicable Not applicable 6 Not applicable Not applicable 9 Group A, subgroup 2 Not required 10 Method 1038 of MIL-STD-750, condition A, TA= 150C, t = 48 hours Method 1038 of MIL-STD-750, condition A TA= 150C, t = 48 hours 11 Group A, subgroup 2, delta limits in accordance with table III herein Gro

35、up A, subgroup 2, delta limits in accordance with table III herein 12 Burn-In (see 4.3.2), t = 240 hours min Burn-In (see 4.3.2), t = 96 hours min 13 Group A, subgroup 2 and 3, delta limits in accordance with table III herein, scope display evaluation (see 4.5.2) Group A, subgroup 2, delta limits in

36、 accordance with table III herein, scope display evaluation (see 4.5.2). 14a. Not applicable Not applicable 14b Opaque glass diodes may use method 2068 in lieu of Hermeticity. Opaque glass diodes may use method 2068 in lieu of Hermeticity. (1) Shall be performed anytime after temperature cycling, sc

37、reen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH,and K factor where approp

38、riate. Measurement delay time (tMD) shall be 70 s maximum. The limits will be statistically derived. See table E-IX of MIL-PRF-19500, group E, and table II, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 7 4.3.2

39、 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3 and 4.5.3.1): IO(min)= 3A, Vr(pk) = rated VRWM, TA= 55C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOor TAto achieve the required TJ. TJ= 135C minimum. 4.4

40、 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The ZJXend-point shall be derived by the supplier and approved by t

41、he qualifying activity. This ZJXend-point shall also be documented in the qualification report. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JAN, JANTX, an

42、d JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, appendix E, table VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition * B3 4066 IFSM= 350 A; ten surges of 8.3 ms each at 1 minute inte

43、rvals, superimposed on IO = 10A, VRWM= rated, see col. 2 of 1.3.2. TA=25C. B3 1071 Fine leak not required. Opaque glass diodes may use method 2068 in lieu of Hermeticity. B4 1037 IO= 5 A minimum (see 1.3.2); VR= rated VRWM(see 1.3.2); 2,000 cycles. End-points shall include delta limits in accordance

44、 with table III herein. B4 1071 Fine leak not required. Opaque glass diodes may use method 2068 in lieu of Hermeticity. B5 1027 IO= 3 A minimum, t = 1,000 hours, VRpk= 80 percent minimum of rated VRWM(see col. 2 of 1.3.2) adjust IOor TAto achieve TJ= 175C minimum; f = 50 - 60 Hz. TA = 55C max. For i

45、rradiated devices, include trras an end-point measurement. End-points shall include delta limits in accordance with table III herein. B8 4065 Peak reverse power, PRM 636 W square wave. Test shall be performed on each sublot; sampling plan: n = 10, c = 0, electrical end-points, see table I, Subgroup

46、2 herein. 4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B2 1071 Fine leak not required. Opaque glass diodes may use method 2068 in lieu of Hermeticity. B3 1037 IO= 5 A minimum (see 1.3.2); VR= rated VRWM(see 1.3.2); 2,000 cyc

47、les. End-points shall include delta limits in accordance with table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/768A 8 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions spe

48、cified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable. 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup

49、Method Condition C2 2036 Condition A, 12 pounds (silver leads) 20 pounds (copper leads), t = 15s. Condition E, 2 pounds. (Lead fatigue not applicable to US diodes.) Suitable fixtures shall be used to pull the end-caps in a manner that does not aid construction. C2 1071 Fine leak not required. Opaque glass diodes may use method 2068 in lieu of Hermeticity.