DLA MIL-PRF-19500 764 F-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL COMMON CATHODE TYPE 1N7071CCT8 JAN JANTX JANTXV AND JANS.pdf

《DLA MIL-PRF-19500 764 F-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL COMMON CATHODE TYPE 1N7071CCT8 JAN JANTX JANTXV AND JANS.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 764 F-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL COMMON CATHODE TYPE 1N7071CCT8 JAN JANTX JANTXV AND JANS.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/764 22 JANUARY 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements

2、 for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky center tap power rectifier diodes for use in high frequency switching power supplies and resonant

3、power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, T8 (TO-258AA) package. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types VRW

4、MIO(1)(2) TC = +100C IFSM (3)tp= 8.3 ms TC= +25C RJC (2) RJC(3) TSTGand TJV dc A dc A (pk) C/W C/W C 1N7071CCT8 45 45 400 .42 .83 -65 to +150 (1) See temperature-current derating curves on figure 2. (2) Entire package. (3) Each leg. 1.4 Primary electrical characteristics. RJC= .42C/W maximum entire

5、package; RJC= .83C/W maximum each leg (figure 3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil . Since contact

6、information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 2 NOTES: 1. Dimensions are in i

7、nches. 2. Millimeters are given for general information only. 3. Protrusion of ceramic eyelets included in dimension LL. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration for 1N7071CCT8 (TO-258AA). Ltr Dimensions Inches Millimeters Min

8、 Max Min Max BL .530 .550 13.46 13.97 CH .240 .270 6.10 6.86 LD .055 .065 1.40 1.66 LL .500 .750 12.7 19.05 LO .140 BSC 3.56 BSC LS .200 BSC 5.08 BSC MHD .155 .165 3.94 4.19 MHO .697 .707 17.70 17.96 TL .815 .835 20.70 21.21 TT .035 .045 0.89 1.14 TW .685 .695 17.40 17.65 T8 TO-258 Provided by IHSNo

9、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections o

10、f this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whethe

11、r or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the sol

12、icitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearc

13、h/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references

14、cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified

15、herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols,

16、and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuratio

17、n shall be in accordance with figure 1 herein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation,

18、 material, or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with t

19、able I, subgroup 2 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I

20、and II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 4 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform

21、in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conforman

22、ce inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualifi

23、cation was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification.

24、4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (tab

25、le E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedan

26、ce (see 4.3.2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1.12 See 4.3.1. See 4.3.1. 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF1= 50 mV (pk); IR1= 100 percent from t

27、he initial value or 800 uA, whichever is greater. Subgroup 2, of table I herein; VF1and IR1; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 800 uA, whichever is greater. 4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test conditi

28、on A, VR= 36 V dc; TJ= +125C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup

29、 4, and figure 3 herein. 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1

30、A, Vbr = 45 V minimum, L = 100 H. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be

31、conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditi

32、ons specified for subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements sha

33、ll be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended t

34、o 1,000 hours for each wafer lot. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specifi

35、ed for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C

36、2 2036 Condition A, weight = 10 lbs, t = 15 seconds. C5 4081 Limit for thermal resistance for 1N7071CCT8 is .83C/W for each diode. C6 1037 TC= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 1,000 hours min; heat sinking allowed. (for TX and TXV only). 4.4.4

37、Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection

38、shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 6 TABLE I. Gro

39、up A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 ZJXC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF1IF= 25 A (pk) .71 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF2IF

40、= 45 A (pk) .92 V dc Reverse current 4016 DC method IR1VR= 45 V .80 mA dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage 4011 Pulsed test (see 4.5.1) VF3IF= 25 A (pk) .62 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF4IF= 45 A (pk) .85 V dc Reverse current 4016 DC method; IR

41、2VR= 45 V 45.0 mA dc Low temperature operation: TC= -55C Forward voltage 4011 Pulsed test (see 4.5.1) VF5 IF= 25 A (pk) .78 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF6 IF= 45 A (pk) .86 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted

42、 without license from IHS-,-,-MIL-PRF-19500/764 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ2,600 pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 S

43、ee 1.3, column 4 herein, ten surges each diode. 60 seconds between surges, (see 4.5.1) Electrical measurements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope display evaluation 4023 Stable only

44、 Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 8 TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MI

45、L-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 IF= 25 A (pk) pulsed (see 4.5.1) VF150 mV dc from initial reading. 2. Reverse current 4016 VR= 45 VdcIR1100 percent from initial reading or 800 uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ Each indiv

46、idual diode. 2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as foll

47、ows: a. Subgroup 2, see table II herein, steps 1, 2, and 3. b. Subgroup 3, see table II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2,

48、 and 3 for all levels. b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels. 5/ Devices which exceed the table I limits for this test shall not be accepted. 6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table III herein, steps 1, 2, and 3. b. Subgroup 2, see table III herein, steps 1 and 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/764 9 TABLE III. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-75