DLA MIL-PRF-19500 763-2009 SEMICONDUCTOR DEVICE DIODE SILICON DUAL SCHOTTKY COMMON CATHODE TYPE 1N7070CCT3 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/763 22 JANUARY 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE 1N7070CCT3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements

2、 for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, Schottky dual power rectifier diode for use in high frequency switching power supplies and resonant power

3、 converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, T3 (TO-257) package. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types VRWMIO(1)(

4、2) TC = +100C IFSM (2)tp= 8.3 ms TC= +25C RJC (2) RJC(3) TSTGand TJV dc A dc A (pk) C/W C/W C 1N7070CCT3 100 16 250 1.0 2.0 -65 to +150 (1) See temperature-current derating curves on figure 2. (2) Entire package. (3) Each leg. 1.4 Primary electrical characteristics. R JC= 1.0C/W maximum entire packa

5、ge for 1N7070CCT3; RJC= 2.0C/W maximum each leg (figure 3); RJA= 80C/W maximum. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconducto

6、rdscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/763 2

7、 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration TO-257 (T3). Ltr Dimensions Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .1

8、90 .200 4.83 5.08 LD .025 .035 0.64 0.88 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 1N7070CCT3 U3 1 3 2 T3 TO-257 Provided by IHSNot for ResaleNo reprodu

9、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/763 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification o

10、r recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are list

11、ed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

12、 DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.dap

13、s.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text

14、of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualificati

15、on. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbrev

16、iations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordanc

17、e with figure 1 herein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material, or finish is

18、 desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 here

19、in. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein. Provided

20、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/763 4 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be

21、 free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4

22、and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a

23、 prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JA

24、NTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-

25、19500) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedance (see 4.3.2). The

26、rmal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1. 12 t = 240 hours minimum. See 4.3.1. t = 48 hours minimum. See 4.3.1. 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF2= 50 mV (p

27、k); IR1= 100 percent from the initial value or 2uA, whichever is greater. Subgroup 2, of table I herein; VF1and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 2uA, whichever is greater. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, t

28、est condition A. TJ= +125C; VR= 80 V dc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max, and figure 3

29、. See table III, subgroup 4 and figure 3 herein. 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse en

30、ergy, as follows: IAS= 1A, VBR= 100 V minimum, L = 100 H. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/763 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Grou

31、p A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be cond

32、ucted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test

33、(IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC = +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 340 hours min; heat sinking a

34、llowed. This test shall be extended to 1,000 on each JANS wafer lot. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC = +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in ac

35、cordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II

36、 herein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 15 seconds C5 4081 Limit for thermal resistance for 1N7070CCT3 is 2.0C/W for each diode. C6 1037 TC = +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 1,000 hours minimum (for TX, TXV

37、 only); (heat sinking allowed). 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods

38、 of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

39、S-,-,-MIL-PRF-19500/763 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 ZJXC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF11N7070CCT3 IF= 8A (pk) .75 V dc For

40、ward voltage 4011 Pulsed test (see 4.5.1) VF21N7070CCT3 IF= 16 A (pk) .95 V dc Reverse current 4016 DC method IR11N7070CCT3 VR= 100 V 10 A dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage 4011 Pulsed test (see 4.5.1) VF31N7070CCT3 IF= 8 A (pk) .66 V dc Forward voltage 4011 Pulsed

41、 test (see 4.5.1) VF41N7070CCT3 IF= 16 A (pk) .85 V dc Reverse current 4016 DC method; IR21N7070CCT3 VR= 100 V 10.0 mA dc Low temperature operation: TC= -55C Forward voltage 4011 Pulsed test (see 4.5.1) VF5.77 V dc 1N7070CCT3 IF= 8 A (pk) Forward voltage 4011 Pulsed test (see 4.5.1) VF61N7070CCT3 IF

42、= 16 A (pk) .98 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/763 7 TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Junc

43、tion capacitance 4001 1N7070CCT3 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ430 pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 1N7070CCT3 See 1.3, column 4 herein, ten surges each diode. 60 seconds between surges, (see 4.5.1) Electrical measurements See table I, subgroup 2 herein Subgroup 7 Diel

44、ectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope display evaluation 4023 Stable only. Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking

45、permitted without license from IHS-,-,-MIL-PRF-19500/763 8 TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 pulsed (see 4.5.1) VF150 mV dc from initial reading. 1N7070CCT3 Forward volta

46、ge 1N7070CCT3 4011 IF= 8 A (pk) IF= 16 A (pk) VF250 mV dc from initial reading. 2. Reverse current 1N7070CCT3 4016 VR= 100V IR1100 percent from initial reading or 2 uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ Each individual diode. 2/ The electrical measurements for table E-VI

47、a (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, and 3

48、. b. Subgroup 3, see table II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels. b. Subgroup 6, see table II herein,

49、 steps 1, 2, and 3 for all levels. 5/ Devices which exceed the table I limits for this test shall not be accepted. 6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table III herein, steps 1, 2, and 3. b. Subgroup 2, see table III herein, steps 1 and 2. P