DLA MIL-PRF-19500 762-2009 SEMICONDUCTOR DEVICE DIODE SILICON DUAL SCHOTTKY COMMON CATHODE TYPE 1N7062CCT1 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/762 22 JANUARY 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements

2、for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and res

3、onant power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, T1 (TO-254AA) package. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Typ

4、es VRWMIO(1)(2) TC = +100C IFSM (3)tp= 8.3 ms TC= +25C RJC (2) RJC(3) TSTGand TJV dc A dc A (pk) C/W C/W C 1N7062CCT1 100 35A 150A 0.63 1.25 -65 to +150 (1) See temperature-current derating curves on figure 2. (2) Entire package. (3) Each leg. 1.4 Primary electrical characteristics. RJC= 0.63C/W max

5、imum entire package for 1N7062CCT1; RJC= 1.25C/W maximum each leg (figure 3); RJA= 50C/W maximum. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or email

6、ed to Semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

7、IL-PRF-19500/762 2 TERM 1 = ANODE TERM 2 = CATHODE TERM 3 = ANODE SCHEMATIC NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. All terminals are isolated from case. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimension

8、s and configuration 1N7062CCT1 (TO-254AA). Ltr Dimensions Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07

9、20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 T1 TO-254 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this

10、 specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified req

11、uirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unl

12、ess otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies

13、 of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract,

14、in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The indi

15、vidual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

16、list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-1

17、9500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordanc

18、e with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material, or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 1

19、4 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test r

20、equirements. The electrical test requirements shall be as specified in tables I and II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 4 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmans

21、hip. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as foll

22、ows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspectio

23、n shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be pe

24、rformed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devic

25、es that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A,

26、one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF2and IR1.VF2and IR1. 12 See 4.3.1. 240 hours, minimum. Se

27、e 4.3.1. 48 hours minimum. 13 Subgroup 2 and 3, of table I herein, VF2and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 70 uA, whichever is greater. Subgroup 2, of table I herein; VF2and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 70 uA, whichever is greater.

28、4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test condition A, VR= 80 V dc; TJ= +125C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines

29、 in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max, and figure 3. See table III, subgroup 4 and figure 3 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 5 4.3.3 Avalanche energy test

30、. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 100 V minimum, L = 100 H. 4.4 Conformance i

31、nspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the

32、applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall

33、be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum fo

34、r 2,000 cycles. B5 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1,000 on each JANS wafer lot. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A mi

35、nimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) a

36、nd reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 15 seconds. C5 4081 Limit for thermal resistance for 1N7062CCT1 is 1.25C/W for each diode. C6 1037 TC= +85C, IF= 2 A minimum for 6

37、,000 cycles. C6 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 1,000 hours minimum (for TX, TXV only); heat sinking allowed. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and t

38、able III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

39、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 310

40、1 ZJXC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF11N7062CCT1 IF= 15 A (pk) .79 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF21N7062CCT1 IF= 30 A (pk) 1.01 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF31N7062CCT1 IF= 35 A (pk) 1.11 V dc Reverse current 4016 DC method IR11N7062CCT

41、1 VR= 100 V 70 A dc Subgroup 3 High temperature operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) VF41N7062CCT1 IF= 15 A (pk) .71 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF51N7062CCT1 IF= 30 A (pk) .92 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF61N7062CCT1 IF= 35 A

42、 (pk) .99 V dc Reverse current 4016 DC method; IR21N7062CCT1 VR= 100 V 40 mA dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symb

43、ol Limits Unit Method Conditions Min Max Subgroup 3 - continued Low temperature operation: TC= -55C Forward voltage 4011 Pulsed test (see 4.5.1) VF7 1N7062CCT1 IF= 15 A (pk) .80 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF8 1N7062CCT1 IF= 30 A (pk) .98 V dc Forward voltage 4011 Pulsed test (

44、see 4.5.1) VF9 1N7062CCT1 IF= 35 A (pk) 1.06 V dc Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ1N7062CCT1 1,000 pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 See 1.3, column 4 herein, ten surges each diode. 60 seconds between surges, (see 4.5.1) Electrical mea

45、surements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope display evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Prov

46、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/762 8 TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 VF250 mV dc from initi

47、al reading. 1N7062CCT1 pulsed (see 4.5.1) IF= 30 A (pk) 2. Reverse current 1N7062CCT1 4016 VR= 100V IR1100 percent from initial reading or 70 uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ Each individual diode. 2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-195

48、00 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, and 3. b. Subgroup 3, see ta

49、ble II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels. b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels. 5/ Devices which