DLA MIL-PRF-19500 761-2010 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY TYPE 1N7069T1 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/761 22 JANUARY 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N7069T1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the produ

2、ct described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, Schottky single power rectifier diode for use in high frequency switching power supplies and resonant power converters. Four leve

3、ls of product assurance are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, T1 (TO-254AA) package. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types VRWMIO(1) TC = +100C IFSMtp= 8.3 ms TC= +25C RJCTST

4、Gand TJV dc A dc A (pk) C/W C 1N7069T1 100 35 270 1.1 -65 to +150 (1) See temperature-current derating curves on figure 2. 1.4 Primary electrical characteristics. RJC= 1.1C/W maximum; RJA= 50C/W maximum. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addr

5、essed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla

6、.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 2 TERM 1 = CATHODE TERM 2 = N/C TERM 3 = ANODE NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. All terminals are isolated from case. 3

7、. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration 1N7069T1 (TO-254AA). Ltr Dimensions Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BS

8、C LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 T1 TO-254 3 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 3 2. APPLICABLE DOCUMENT

9、S 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure t

10、he completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifica

11、tions, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification fo

12、r. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelp

13、hia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and

14、regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufactu

15、rer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface a

16、nd physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or A

17、lloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material, or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is perform

18、ed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical per

19、formance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195

20、00/761 4 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Cl

21、assification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accor

22、dance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, t

23、he tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as spe

24、cified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pul

25、se, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 1

26、0 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1.12 See 4.3.1. 240 hours, minimum. See 4.3.1. 48 hours, minimum. 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 36 uA, whichever is greater. Subgroup 2, of table I herein; VF1an

27、d IR1; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 36 uA, whichever is greater. 4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test condition A, VR= 80 V dc; TJ= +125C. 4.3.2 Thermal impedance. The thermal impedance measuremen

28、ts shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max, and figure 3. See table III, subgroup 4, and figure 3 herein. 4.3.3 Avalanche energy test. The avalanche energ

29、y test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 100 V minimum, L = 100 H. Provided by IHSNot for ResaleNo reprod

30、uction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I her

31、ein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and E-VIb (JAN

32、, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, ta

33、ble E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1,000 on each JANS wafer lot. 4.4.2.2 Group B inspection, table E-VIb

34、(JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measur

35、ements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 15 seconds. C5 4081 Limit for the

36、rmal resistance for 1N7069T1 is 1.1C/W. C6 1037 TC= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 1,000 hours minimum (for TX TXV only); heat sinking allowed. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and c

37、onditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Condit

38、ions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subg

39、roup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance ZJXC/W Forward voltage 4011 IF= 35 A (pk) VF11N7069T1 Pulsed test (see 4.5.1) 1.05 V dc Forward voltage 4011 IF= 70 A (pk) VF21N7069T1 Pulsed test (see 4.5.1) 1.52 V dc Reverse current 4016 DC method IR11N7069T1 VR= 100 V 36

40、A dc Subgroup 3 High temperature operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) VF31N7069T1 IF= 35 A (pk) 1.0 V dc Forward voltage 4011 VF41N7069T1 IF= 70 A (pk) 1.47 V dc Reverse current 4016 DC method IR21N7069T1 VR= 100 V 28 mA dc Low temperature operation: TC= -55C Forward vol

41、tage 4011 Pulsed test (see 4.5.1) VF5 1N7069T1 IF= 35 A (pk) 1.0 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF6 1N7069T1 IF= 70 A (pk) 1.42 V dc Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ1N7069T1 1,375 pF See footnotes at end of table. Provided by IHSNot

42、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Not applicable Subgroup 6 Surge 4066 See 1.3, column 4 herein, ten surges. 60

43、seconds between surges, (see 4.5.1) Electrical measurements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope display evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 he

44、rein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 8 TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max

45、 1. Forward voltage 4011 VF150 mV dc from initial reading. 1N7069T1 pulsed (see 4.5.1) IF= 35 A (pk) 2. Reverse current 4016 IR11N7069T1 VR= 100V 100 percent from initial reading or 36 uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ The electrical measurements for table E-VIa (JAN

46、S) of MIL-PRF-19500 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 2/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, and 3. b. S

47、ubgroup 3, see table II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 3/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels. b. Subgroup 6, see table II herein, steps

48、 1, 2, and 3 for all levels. 4/ Devices which exceed the table I limits for this test shall not be accepted. 5/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table III herein, steps 1, 2, and 3. b. Subgroup 2, see table III herein, steps 1 and 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/761 9 TABLE III. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-750 Qualification Method Conditions Subgroup 1 n = 12, c = 0 Te