DLA MIL-PRF-19500 739 A-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR N-CHANNEL AND P-CHANNEL SILICON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F.pdf

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1、 MIL-PRF-19500/739A 1 July 2013 SUPERSEDING MIL-PRF-19500/739 24 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F This specification is approved f

2、or use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for quad N-channel and P-channel,

3、 enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, MS-004CC (28-pad ce

4、ramic leadless chip carrier) and 2, MO-036AB. * 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(free air) (1) TA= +25C PT(2) TC= +25C RJCRJAVDS= VDGVGSN-channel P-channel N-channel P-channel W W C/W C/W V dc V dc V dc V dc 2N7518 1.39 N/A N/A 90 100 -100 20 20 2N7518U 2.08 (ref.)

5、10.6 11.8 60 (ref.) 100 -100 20 20 Type ID1 (3) TC= +25C ID2 TC= +100C ISIDM (3) TJand TSTGN-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel A dc A dc A dc A dc A dc A dc A (pk) A (pk) C 2N7518 1.6 -0.85 1.0 -0.55 1.6 -0.85 6.4 -3.4 -55 to 2N7518U 4.6 -2.4 2.9 -1.5 4.6

6、-2.4 18.4 -9.6 +150 (1) Derate linearly 0.017 W/C (2N7518U, ref.) or 0.011 W/C (2N7518) for TA +25C, PT = (TJMAX - TA)/RJA. * (2) Derate linearly 0.084 W/C for TC +25C; PT = (TJMAX- TC) / RJC. (3) See figure 3, thermal impedance curves. (4) IDM= 4 X ID1; ID1as calculated by: ( ) ( ) Tat )on (Rx RT-

7、T= IJMDSJCCJMD(for 2N7518U) ( ) ( ) Tat (on)RRT- TIJMDSJAAJMDx =(for 2N7518) AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since

8、contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 October 2013. Provided by IHSNo

9、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mAdc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent rated VDSMax rDS(on)(1) VGS= 12V, ID= ID2TJ= +25C

10、 TJ= +150C N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel V dc V dc V dc V dc A dc A dc Min Max Min Max 2N7518 100 -100 2.0 4.0 -2.0 -4.0 10 10 0.29 0.96 0.58 1.92 2N7518U 100 -100 2.0 4.0 -2.0 -4.0 10 10 0.27 0.96 0.57 2.10 Type EAS EAS N-channel

11、 P-channel 2N7518 2N7518U mJ 130 47 mJ 175 60 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recomme

12、nded for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 G

13、overnment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME

14、NT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the S

15、tandardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document take

16、s precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 3 NOTES: 1. Dimensions are in inches. 2. Mil

17、limeters are given for general information only. 3. All terminals are isolated from the case. 4 N is the quantity of terminal positions. 5. The package shall meet dimension A without solder. Maximum allowable solder thickness is .006 inch (0.15 mm). 6 Applied solder to the terminals will increase fl

18、atness tolerance by additional .004 inch (0.10 mm). 7. Q1 and Q4 are N-channel. Q2 and Q3 are P-channel. All are un-committed. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration of leadless chip carrier (MS-004CC). Dimensions Symbol Inc

19、hes Millimeters Min Max Min Max A .075 .095 1.91 2.41 A1 .054 .066 1.37 1.68 B .020 .030 0.51 0.76 D .440 .460 11.18 11.68 D2 .300 7.62 E .440 .460 11.18 11.68 E2 .300 7.62 E4 .413 .419 10.49 10.64 e .050 BSC 1.27 BSC h .040 BSC 1.02 BSC h1 .010 .020 0.26 0.50 j .040 BSC 1.02 BSC j1 .010 .020 0.26 0

20、.50 L .044 .056 1.12 1.42 L1 .079 .091 2.01 2.31 N 28 28 R1 .007 .011 .178 .279 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All ter

21、minals are isolated from the case. 4. Q1 and Q3 are N-channel. Q2 and Q4 are P-channel. All are un-committed. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration dual in line (MO-036AB). Dimensions Dimensions Symbol Inches Millimeters No

22、tes Symbol Inches Millimeters Notes Min Max Min Max Min Max Min Max BH .105 .175 2.67 4.45 LS .300 TP 7.62 TP LH .025 .055 0.64 1.40 LS1.100 TP 2.54 TP LW .015 .021 0.381 0.533 LL .125 .175 3.18 4.45 LW1.038 .060 0.97 1.52 LL1.000 .030 0.00 0.76 LT .008 .012 0.203 0.305 0 15 0 15 BL .690 .770 17.53

23、19.56 R .010 0.25 BW .290 .325 7.37 8.26 S .030 .095 0.76 2.41 BW1.280 .310 7.11 7.87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-

24、19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbrevia

25、tions, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrepetitive. nC nano coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MI

26、L-PRF-19500, and on figure 1 and figure 2. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4 Marking. Marking shall be in accordance

27、with MIL-PRF-19500. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following hand

28、ling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber

29、or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source.

30、 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor de

31、vices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 6 4. VERIFICATION 4.1

32、Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance

33、 with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the te

34、sts specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design changes which m

35、ay affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the performance specification sheet. End-point

36、 measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 7 * 4.3 Screening (JANS and

37、 JANTXV). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500)

38、 (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4

39、.3.3) 9 Subgroup 2 of table I herein Not applicable IDSS1, IGSSF1, IGSSR1, as a minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial v

40、alue, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1

41、042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)

42、1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial val

43、ue, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. * (3) Shall be perfor

44、med anytime after temperature cycling, screen 3a. JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 8 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s

45、minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1. b. Peak gate voltage (VGS) 12 V dc. c. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature +25C, +10C, -5C. e. Inductance: . ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse mi

46、nimum. g. Supply voltage VDD= 25 V dc. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 30 - 60 s

47、 max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. End-

48、point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIA (JANS) and table VIB (JANTXV) of MIL-PRF-19500, and herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, table VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 SEM qualification may be performed anytime prior to lot for