DLA MIL-PRF-19500 739 A-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR N-CHANNEL AND P-CHANNEL SILICON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F.pdf
《DLA MIL-PRF-19500 739 A-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR N-CHANNEL AND P-CHANNEL SILICON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 739 A-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR N-CHANNEL AND P-CHANNEL SILICON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F.pdf(20页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/739A 1 July 2013 SUPERSEDING MIL-PRF-19500/739 24 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F This specification is approved f
2、or use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for quad N-channel and P-channel,
3、 enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, MS-004CC (28-pad ce
4、ramic leadless chip carrier) and 2, MO-036AB. * 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(free air) (1) TA= +25C PT(2) TC= +25C RJCRJAVDS= VDGVGSN-channel P-channel N-channel P-channel W W C/W C/W V dc V dc V dc V dc 2N7518 1.39 N/A N/A 90 100 -100 20 20 2N7518U 2.08 (ref.)
5、10.6 11.8 60 (ref.) 100 -100 20 20 Type ID1 (3) TC= +25C ID2 TC= +100C ISIDM (3) TJand TSTGN-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel A dc A dc A dc A dc A dc A dc A (pk) A (pk) C 2N7518 1.6 -0.85 1.0 -0.55 1.6 -0.85 6.4 -3.4 -55 to 2N7518U 4.6 -2.4 2.9 -1.5 4.6
6、-2.4 18.4 -9.6 +150 (1) Derate linearly 0.017 W/C (2N7518U, ref.) or 0.011 W/C (2N7518) for TA +25C, PT = (TJMAX - TA)/RJA. * (2) Derate linearly 0.084 W/C for TC +25C; PT = (TJMAX- TC) / RJC. (3) See figure 3, thermal impedance curves. (4) IDM= 4 X ID1; ID1as calculated by: ( ) ( ) Tat )on (Rx RT-
7、T= IJMDSJCCJMD(for 2N7518U) ( ) ( ) Tat (on)RRT- TIJMDSJAAJMDx =(for 2N7518) AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since
8、contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 October 2013. Provided by IHSNo
9、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mAdc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent rated VDSMax rDS(on)(1) VGS= 12V, ID= ID2TJ= +25C
10、 TJ= +150C N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel V dc V dc V dc V dc A dc A dc Min Max Min Max 2N7518 100 -100 2.0 4.0 -2.0 -4.0 10 10 0.29 0.96 0.58 1.92 2N7518U 100 -100 2.0 4.0 -2.0 -4.0 10 10 0.27 0.96 0.57 2.10 Type EAS EAS N-channel
11、 P-channel 2N7518 2N7518U mJ 130 47 mJ 175 60 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recomme
12、nded for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 G
13、overnment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME
14、NT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the S
15、tandardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document take
16、s precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 3 NOTES: 1. Dimensions are in inches. 2. Mil
17、limeters are given for general information only. 3. All terminals are isolated from the case. 4 N is the quantity of terminal positions. 5. The package shall meet dimension A without solder. Maximum allowable solder thickness is .006 inch (0.15 mm). 6 Applied solder to the terminals will increase fl
18、atness tolerance by additional .004 inch (0.10 mm). 7. Q1 and Q4 are N-channel. Q2 and Q3 are P-channel. All are un-committed. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration of leadless chip carrier (MS-004CC). Dimensions Symbol Inc
19、hes Millimeters Min Max Min Max A .075 .095 1.91 2.41 A1 .054 .066 1.37 1.68 B .020 .030 0.51 0.76 D .440 .460 11.18 11.68 D2 .300 7.62 E .440 .460 11.18 11.68 E2 .300 7.62 E4 .413 .419 10.49 10.64 e .050 BSC 1.27 BSC h .040 BSC 1.02 BSC h1 .010 .020 0.26 0.50 j .040 BSC 1.02 BSC j1 .010 .020 0.26 0
20、.50 L .044 .056 1.12 1.42 L1 .079 .091 2.01 2.31 N 28 28 R1 .007 .011 .178 .279 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All ter
21、minals are isolated from the case. 4. Q1 and Q3 are N-channel. Q2 and Q4 are P-channel. All are un-committed. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration dual in line (MO-036AB). Dimensions Dimensions Symbol Inches Millimeters No
22、tes Symbol Inches Millimeters Notes Min Max Min Max Min Max Min Max BH .105 .175 2.67 4.45 LS .300 TP 7.62 TP LH .025 .055 0.64 1.40 LS1.100 TP 2.54 TP LW .015 .021 0.381 0.533 LL .125 .175 3.18 4.45 LW1.038 .060 0.97 1.52 LL1.000 .030 0.00 0.76 LT .008 .012 0.203 0.305 0 15 0 15 BL .690 .770 17.53
23、19.56 R .010 0.25 BW .290 .325 7.37 8.26 S .030 .095 0.76 2.41 BW1.280 .310 7.11 7.87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/739A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-
24、19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbrevia
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