DLA MIL-PRF-19500 738 A-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N7575 2N7576 AND 2N7577 JAN JANTX JANTXV AND JANS.pdf

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1、 MILPRF19500/738A 20 October 2012 SUPERSEDING MILPRF19500/738 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Age

2、ncies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power darlington transistors. Four levels of product

3、assurance are provided for each device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO254AA in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTRJC (2)VCBOand VCEXVCEOVEBOIBICTJand TSTGTA= +25C TC= +25C (1) W W C/W

4、 V dc V dc V dc A dc A dc C 2N7575 6 175 1.0 350 300 4.0 2.5 20 65 to +200 2N7576 6 175 1.0 400 350 4.0 2.5 20 65 to +200 2N7577 6 175 1.0 450 400 4.0 2.5 20 65 to +200 (1) See figure 2 for temperature-power derating curves. (2) See figure 3 for thermal impedance graph. AMSC N/A FSC 5961INCHPOUND Co

5、mments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST On

6、line database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/738A 2 1.4 Primary ele

7、ctrical characteristics. Unless otherwise specified, TC= +25C. hFE1(1) hFE2(1) VBE(sat)1VCE(sat)1Limits VCE= 5 V dc IC= 10 A dc VCE= 5V dc IC= 20 A dc IC= 15 A dc IB= 1.2 A dc IC= 15 A dc IB= 1.2 A dc Min Max 75 500 50 V dc 2.6 V dc 1.5 |hfe| Cobo Pulse response (2) Limits VCE= 10 V dc IC= 1 A dc f

8、= 1 MHz VCB= 10 V dc IE= 0 100 KHz f 1 MHz tdtrtstfMin Max 25 pF 150 375 s 0.1 s 0.3 s 1.2 s 0.3 (1) Pulsed (see 4.5.1). (2) See figure 4 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification.

9、 This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of do

10、cuments cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise s

11、pecified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are

12、 available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between

13、 the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

14、thout license from IHS-,-,-MILPRF19500/738A 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 2 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790

15、.800 20.07 20.32 3 TT .040 .050 1.02 1.27 3 TW .535 .545 13.59 13.84 3 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Protrusion thickness of ceramic eyelets included in dimension LL. 3. Terminal 1 is emitter, terminal 2 is collector, and terminal 3 is bas

16、e. All leads are isolated from the case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO254AA). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/738A 4 3. REQUIREMENTS 3.1 Gener

17、al. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manu

18、facturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Acronyms, symbols, and definitions. The acronyms, symbols, and definitions used herein shall be as specified in MILPRF19500 and as follows: IH The collector current applied to the device under test during the heating period. IM The me

19、asurement current applied to forward bias the junction for measurement of VBE. tH The duration of the applied heating power pulse. tSW Sample window time during which final VBEmeasurement is made. 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions

20、shall be as specified in MILPRF19500 and on figure 1 (TO254AA) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (se

21、e 6.2). 3.4.2 Lead formation. Where a choice of lead formation is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table EIV of MILPRF19500 and 100

22、percent dc testing in accordance with table I, subgroup 2 herein. 3.4.3 Polarity. The identification of terminals of the device package shall be as shown on figure 1. Terminal 1 shall be connected to the emitter, terminal 2 shall be connected to the collector, and terminal 3 shall be connected to th

23、e base. All leads shall be isolated from the case. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical

24、test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1

25、Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance

26、 with MILPRF19500, and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/738A 5 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was aw

27、arded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (

28、JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV o

29、f MILPRF19500) Measurement JANS JANTX and JANTXV 3c (1) Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 ICEX1ICEX111 ICEX1and hFE2, ICEX1 = 100 percent of initial value or 50 nA dc, whichever is greater. ICEX1and hFE2, ICEX1 = 100 percent of initial value or 100 nA dc, whichever is gre

30、ater. 12 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein. ICEX1 = 100 percent of initial value or 50 nA dc, whichever is greater. hFE2 = 15 percent of initial value. Subgroup 2 of table I herein. ICEX1 = 100 percent of initial value or 100 nA dc, whichever is greater. hFE2 = 25 percent of

31、 initial value. (1) This test shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test method 3131 of MILSTD750

32、 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) 70 s maximum. The thermal impedance limit used in 4.3, screen 3c, and table I, subgroup 2 herein shall be set statistically by the supplier. See group E inspection (tabl

33、e II, subgroup 4) herein. 4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TJ= +175C minimum, VCBgreater than or equal to 25 V dc; TA= +30C maximum. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as specified herein. If al

34、ternate screening is being performed in accordance with MILPRF19500, a sample of screened devices shall be submitted to and pass the requirements of table I, subgroups 1 and 2. Group B inspection in accordance with subgroup 1 of table EVIB of MILPRF19500 is not required to be performed again if grou

35、p B has already been satisfied in accordance with 4.4.2. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for

36、ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/738A 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVIA (JANS) and table EVIB (JAN, JANTX, and JANTXV) of MIL

37、PRF19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.4.2.1 Product assurance level JANS (table EVIA of MILPRF19500). Subgroup Method Conditions B3 1037 For

38、 solder die attach: 2,000 cycles, VCBgreater than or equal to 100 V dc. B4 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum. 4.4.2.2 Product assurance levels JAN, JANTX, and JANTXV (table EVIB of MILPRF19500). Subgroup Method

39、 Conditions B3 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum. B3 1037 For solder die attach: 2,000 cycles, VCBgreater than or equal to 100 V dc. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance

40、 with the conditions specified for subgroup testing in table EVII of MILPRF19500 and as follows herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Condi

41、tions C2 2036 Test condition A; weight = 10 pounds (4.54 Kg); time = 15 s. C5 3131 See 4.3.1, RJC= 1.0C/W. C6 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum, 1,000 hours minimum. C6 1037 For solder die attach: 6,000 cycles,

42、 VCBgreater than or equal to 100 V dc. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accord

43、ance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse response measurements. The conditions for pulse response

44、 measurement shall be as specified in section 4 of MILSTD750. 4.5.2 Insulation resistance test. The isolation resistance test shall be in accordance with test method 1016 of MILSTD750. The test voltage shall be 1000 volts. The following preparations shall apply: short the collector, emitter and base

45、 terminals together. The limit for acceptance shall be 109 minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/738A 7 4.6 Delta measurements. The requirements for delta measurements for groups B, C, and E shall be as specified below.

46、 Steps Inspection (1) (2) (3) (4) (5) MILSTD750 Symbol Limits Unit Method Conditions Min Max 1 Collector to base cutoff current 3036 Bias condition D ICBO 100 percent of initial value or 100 nA, whichever is greater. 2N7575 VCB= 350 V dc 2N7576 VCB= 400 V dc 2N7577 VCB= 450 V dc 2 Forward current tr

47、ansfer ratio 3076 VCE= 5 V dc; IC= 20 A dc; pulsed (see 4.5.1) hFE225 percent change from initial reading. 3 Saturation voltage, collector to emitter 3071 IC= 15 A dc; IB= 1.2 A dc, pulsed (see 4.5.1) VCE(sat)1200 mV change from previously measured value. (1) Devices which exceed the group A limits

48、for this test shall not be acceptable. (2) The delta electrical measurements for group B, product assurance level JANS, shall be as follows: a. In addition to the measurements specified for subgroup 4 of table EVIA of MILPRF19500, the measurements of steps 1 and 2 of this table shall also be taken. b. In addition to the measurements specified for subgroup 5 of table EVIA of MILPRF19500, the measurements of steps 1 and 2 of this table shall also be taken. (3) The delta electrical measurements for group B, product assurance levels JAN, JANTX and JANTXV, shall be