DLA MIL-PRF-19500 735 A-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL CENTER TAP TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/735A 24 July 2009 SUPERSEDING MIL-PRF-19500/735 4 October 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all D

2、epartments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, schottky, power rectifier diodes for

3、use in high frequency switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U-1) and figure 2 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, maximum ratings (TA= +25C). Column 1 C

4、olumn 2 Column 3 Column 4 Column 5 Column 6 Types VRWMIO(1)(2) TC = +100C IFSM (3) tp= 8.3 ms, TC= +25C RJC TSTGAnd TJV dc A dc A (pk) C/W C 1N7041CCU1 45 20 250 1.67 (3) -65 to +150 1N7045T3 45 10 110 2.6 (1) See temperature-current derating curves in figures 3 and 4 . (2) Entire package. (3) Each

5、leg. 1.4 Primary electrical characteristics. RJC= 0.83C/W maximum for entire package for 1N7041CCU1; RJC= 2.6C/W maximum for 1N7045T3; RJA= 80C/W maximum. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: D

6、SCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion me

7、asures necessary to comply with this revision shall be completed by 24 October 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 2 Symbol Dimensions Inches Millimeters Min Max Min Max BL .620 .630 15.75 16.00 BW .445 .455 11.30

8、 11.56 CH .129 .141 3.28 3.58 LH .010 .020 0.25 0.51 LL1 .410 .420 10.41 10.67 LL2 .152 .162 3.86 4.11 LS1 .200 .220 5.08 5.59 LS2 .100 .110 2.54 2.79 LW1 .370 .380 9.40 9.65 LW2 .135 .145 3.43 3.68 Q1 .030 0.76 Q2 .035 0.89 Term 1 Cathode Term 2 Anode Term 3 Anode NOTES: 1. Dimensions are in inches

9、. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions and configuration for 1N7041CCU1. 2 3 1 U1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

10、,-,-MIL-PRF-19500/735A 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration for 1N7045T3. Ltr Dimensions Inches Millimeters Min Max Min Max BL .4

11、10 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.88 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 TO-257 1 3 Provided by IHSNot for ResaleNo r

12、eproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specific

13、ation or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they a

14、re listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or co

15、ntract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assi

16、st.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, t

17、he text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qua

18、lification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions

19、. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2 herein. Methods used for electrical isolation of the terminal feed

20、throughs for the TO-257 package shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figures 1 and 2 herein. 3.4.2 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-

21、PRF-19500, MIL-STD-750, and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed on the TO-257, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100

22、 percent dc testing in accordance with table I, subgroup 2 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test require

23、ments shall be as specified in tables I and II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 5 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be pro

24、cessed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4

25、.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification

26、or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of

27、this revision to maintain qualification. * 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

28、herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) (2) 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3ms, IO=

29、 0, VRWM= 0, IFSM= see 1.3 herein. (2) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 3d Peak reverse energy test (see 4.3.3) Peak reverse energy test (see 4.3.3) 4 Required Optional 5 Required Not applicable 8 Required Not applicable 9, 10 Not applicable Not applicable 11 VF1and IR1

30、VF1and IR112 See 4.3.1, 240 hours See 4.3.1, 48 hours 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF150 mV (pk); IR1= 100 percent from the initial value or 100 uA dc, whichever is greater. Subgroup 2, of table I herein; VF1and IR1; VF150 mV (pk); IR1= 100 percent from the initial value or 10

31、0 uA dc, whichever is greater. (1) Surge shall precede thermal impedance. (2) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 6 * 4.3.1 P

32、ower burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. VR= 36 V dc; TJ= +125C. 4.3.2 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in

33、that method for determining IM, IH, tH, tMDand VC. Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.3.3 Peak reverse energy test. The peak reverse energy test is to be performed using the circuit as shown on figure 7 or equivalent. The Schottky rectifier under te

34、st must be capable of absorbing the reverse energy, as follows: IRM= 1 A, VRSM= 45 V minimum, L = 100 uH. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-

35、PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E

36、-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. * 4.

37、4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR = 36 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1000 on each JANS wafer lot. * 4.4.2.2 Gr

38、oup B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of

39、MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 1

40、5 seconds. Not required for 1N7041CCU1. C5 4081 Limit for thermal resistance for 1N7041 is 1.67C/W for each leg. Limit for thermal resistance for 1N7045 is 2.6C/W. C6 1037 TC = +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 1,000 hours minimum; (heat sinking

41、 allowed). (required for TX and TXV levels only) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 7 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup t

42、esting in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein except ZJX need not be performed after group E subgroup 2. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriat

43、e tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 8 * TABLE I. Group A inspection. Inspection 1/ 2/ MI

44、L-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Forward voltage 4011 Pulsed (see 4.5.1) VF11N7041 1N7045 IF= 10A (pk) IF= 10A (pk) 0.57 0.73 V dc V dc Forward voltage 4011 Pulsed (see 4.5.1) VF21N7041 1N7045 IF= 20 A(pk) IF= 20 A(pk

45、) 0.69 1.02 V dc V dc Reverse current 4016 DC method IR11N7041 1N7045 VR= 45 V VR= 45 V 0.5 0.5 mA dc mA dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage 4011 Pulsed (see 4.5.1) VF31N7041 1N7045 IF= 10 A(pk) IF= 10 A(pk) 0.48 0.70 V dc V dc Forward voltage 4011 Pulsed (see 4.5.1)

46、 VF41N7041 1N7045 IF= 20 A(pk) IF= 20 A(pk) 0.61 1.10 V dc V dc Reverse current 4016 DC method; IR21N7041 1N7045 VR= 45 V VR= 45 V 67 67 mA dc mA dc Low temperature operation: TC= -55C Forward voltage 4011 Pulsed (see 4.5.1) VF5 1N7041 IF= 10 A dc 0.65 V dc 1N7045 IF= 10 A dc 0.74 V dc Forward volta

47、ge 4011 Pulsed (see 4.5.1) VF6 1N7041 IF= 20 A dc 0.74 V dc 1N7045 IF= 20 A dc 0.95 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/735A 9 * TABLE I. Group A inspection - Continued. Inspection 1/ 2/ M

48、IL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ900 pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 See column 4 of 1.3. Ten surges for each internal diode. 60 seconds between surges. (see 4.5.1) Electrical measurements See table I, subgroup 2 herein. Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted, measure from leads to case DWV 10 A dc Scope display evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 herein. 1/ For sampling plan, see MIL-PRF