DLA MIL-PRF-19500 587 D-2013 SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER TYPES 1N6661 1N6662 1N6663 1N6661US 1N6662US AND 1N6663US JAN JANTX JANTXV AND JANS.pdf

《DLA MIL-PRF-19500 587 D-2013 SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER TYPES 1N6661 1N6662 1N6663 1N6661US 1N6662US AND 1N6663US JAN JANTX JANTXV AND JANS.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 587 D-2013 SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER TYPES 1N6661 1N6662 1N6663 1N6661US 1N6662US AND 1N6663US JAN JANTX JANTXV AND JANS.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/587D 6 December 2013 SUPERSEDING MIL-PRF-19500/587C 28 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, AND 1N6663US, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all D

2、epartments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon diodes. Four levels of product assuran

3、ce are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (axial lead) and figure 2 (surface mount). 1.3 Maximum ratings. Unless otherwise specified TA= 25C. Type VRWMIO2(1) TA= +150C IO1(1) (2) (3) (4) TA= +25C IFSMtp= 1/120s TA= +25C TJand TSTG(ambie

4、nt temperature) Barometric pressure reduced RJLat L = .375 inch (9.52 mm) RJECat L = 0 inch (0 mm) 1N6661, US 1N6662, US 1N6663, US V(pk) 225 400 600 mA 150 150 150 mA 500 500 500 A 5 5 5 C -65 to +175 -65 to +175 -65 to +175 mmHg 8 8 8 C/W 160 160 160 C/W 35 35 35 (1) No forced air or heat sinking

5、shall be permitted for IOratings. (2) TEC= 110C. (3) Devices with leads. Derate 2.8 mA/C between 25C and 150C. Derate 6 mA/C between 150C and 175C. (4) US suffix devices. Derate 8.75 mA/C at TECbetween 110C and 150C. Derate 6 mA/C at TECbetween 150C and 175C. AMSC N/A FSC 5961INCH-POUND JANS1N645-1,

6、 JANS 1N647-1 and JANS 1N649-1 are nonpreferred part numbers and are inactive for new design. The preferred part numbers are JANS1N6661, JANS1N6662, and JANS1N6663. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus

7、, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this docum

8、ent shall be completed by 6 March 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/587D 2 1.4 Unless otherwise indicated, primary electrical characteristics at TA= +25C. Type VFat IF= 400 mA dc 2 percent duty cycle, 8.3 ms max puls

9、e width IRat TA= +25C IRat TA= +150C 1N6661, US 1N6662, US 1N6663, US V dc (max) 1.0 1.0 1.0 A dc (max) at VR.050 225 V dc .050 400 V dc .050 600 V dc A dc (max) at VR15 225 V dc 15 400 V dc 25 600 V dc 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sectio

10、ns 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must m

11、eet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent

12、specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semicondu

13、ctor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contr

14、act, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo

15、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/587D 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max BD .060 .090 1.52 2.29 2 BL .120 .200 3.05 5.08 LD .018 .022 0.46 0.56 3 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. 2. Millimeters are

16、 given for general information only. 3. The specified lead diameters apply in the zone between .050 inch (1.27 mm) from the diode body to the end of the lead. Outside of this zone the lead diameter shall not exceed the maximum of dimension BD. 4. In accordance with ASME Y14.5M, diameters are equival

17、ent to x symbology. FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/587D 4 Dimensions Symbol Inches Millimeters Min Max Min Max BD .091 .103 2.31 2.62 BL .168 .200 4.27 5.08 ECT .019 .028 0.48 0.71 S .003

18、0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of surface mount family. Provided by IHSNot for ResaleNo reproduction or networking permitted with

19、out license from IHS-,-,-MIL-PRF-19500/587D 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorize

20、d by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500. 3.4 Interface and physical dimensi

21、ons. The interface and physical dimensions shall be specified in MIL-PRF-19500 and figure 1 (DO-41) and figure 2 (surface mount) herein. 3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder al

22、loy is used for finish, the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug construct

23、ion, utilizing a category I bond, in accordance with MIL-PRF-19500, except for JANHC and JANKC. UL and US version devices shall be structurally identical to the nonsurface mount version devices except for lead configuration. 3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. 3.5.

24、1 Marking of US-suffix devices. For US-suffix devices, all marking (except as stated in 3.5.2 ) may be omitted from the body, but shall be retained on the initial container. 3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding will

25、be permitted. For US-suffix devices the cathode end may be identified by three evenly spaced dots of a contrasting color or a solid band. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table

26、I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, servi

27、ceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). Provided by IHSNot for ResaleNo reproduction or net

28、working permitted without license from IHS-,-,-MIL-PRF-19500/587D 6 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only.

29、 In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain q

30、ualification. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein sha

31、ll not be acceptable. Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 VF1IR1 Not applicable 11 VF1IR1 VF1IR1 VF1IR1 12 See 4.3.2 See 4.3.2 (2) 13 Subgroups 2 and 3 of table I here

32、in; IR1 100 percent of initial reading or .010 A dc whichever is greater. VF1 25 mV dc. Scope display (see 4.5.2). Subgroup 2 of table I herein; IR1 100 percent of initial reading or .010 A dc whichever is greater. VF125 mV dc. Scope display (see 4.5.2). (1) Thermal impedance shall be performed any

33、time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for det

34、ermining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. The limit will be statistically derived. See table II, group E, subgroup 4 herein. 4.3.2 Power burn-in conditions (method 1038, condition B (a) of MIL-STD-750). All devices shall be operated under one of th

35、e following conditions (see 4.5.3). Type TA= +125C; f = 60 Hz TA= +25C; f = 60 Hz TA= +25C 1N6661, US VR= 225 V (pk); IO= 200 mA VR= 225 V (pk); IO= 400 mA IF(dc) = 400 mA 1N6662, US VR= 400 V (pk); IO= 200 mA VR= 400 V (pk); IO= 400 mA IF(dc) = 400 mA 1N6663, US VR= 600 V (pk); IO= 200 mA VR= 600 V

36、 (pk); IO= 400 mA IF (dc) = 400 mA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/587D 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall b

37、e conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measure

38、ments (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3

39、1056 0C to +100C, 25 cycles. B3 1051 -55C to +175C, 100 cycles. * B3 4066 Condition A, IFSM= rated IFSM(see 1.3); 10 surges of 8.3 ms each at 1 minute intervals, superimposed on IO= rated, VRWM= rated. B4 1037 IO= 500 mA; f = 60 Hz, TA= +25C 3C; tON= tOFF= 3 minutes (minimum) for 2,000 cycles; mount

40、ing conditions in accordance with method 1026 of MIL-STD-750 (see 4.5.3). 1N6661, US = VRM= 225 V(pk) 1N6662, US = VRM= 400 V(pk) 1N6663, US = VRM= 600 V(pk) B5 1027 IO= 500 mA minimum, apply VR= rated VRWM(see 1.3 and, 4.5.3) adjust IOto achieve TJminimum; f = 50-60 Hz. TA= + 55C max. TJ= 175C mini

41、mum; t = 1,000 hours. n = 45, c = 0. B6 Not applicable. B8 4065 Peak reverse power, PRM 100 W for square wave in accordance with test method 4065 of MIL-STD-750 (314 W for half-sine wave). Test shall be performed on each sublot; sampling plan n = 10, c = 0, end-points, see table I, subgroup 2 herein

42、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/587D 8 4.4.2.2 Group B inspection, appendix E, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1056 0C to +100C, 25 cycles. B2 1051 -55C to +175C, 25

43、cycles. * B2 4066 Condition A, TA= +25C, IFSM= 5 A, ten 8.3 ms surges at 1 surge per minute intervals, superimposed on IO= rated, VRWM= rated. Mounting conditions are in accordance with method 1026 of MIL-STD-750. B3 1027 IO= 150 mA dc; f = 60 Hz; TJ= +150C (see 4.5.3). 1N6661, US = VRM= 225 V(pk) 1

44、N6662, US = VRM= 400 V(pk) 1N6663, US = VRM= 600 V(pk) B5 Not applicable B6 1032 TA= + 175C (nonoperating). (NOTE: Leaded samples from the same lot may be used in lieu of US suffix samples for all subgroups.). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

45、IHS-,-,-MIL-PRF-19500/587D 9 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the applicable inspections of ta

46、ble I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable steps of table III herein. * 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1056 0C to +100C, 10 cycles. C2 1051 -55C to +175C, 20 cycles. * C2 2036 Lead tensio

47、n: Test condition A; weight = 6 pounds; t = 15 seconds. Lead fatigue: Condition E. NOTE: Not applicable to U-suffix devices. * C2 2036 US devices Tension: Test condition A; weight = 6 pounds; t = 15 seconds. Suitable fixtures may be used to pull the end-caps in a manner which does not aid constructi

48、on. Reference to axial lead may be interpreted as end-cap with fixtures used for mounting (see figure 3 herein). (Lead fatigue is not applicable to US diodes). C3 Not applicable. C5 4081 See 4.5.4 RJL= 160C/W maximum, RJEC=35C/W maximum. C6 1026 TJ= +150C; f = 60 Hz; IO= 150 mA (see 4.5.3). 1N6661, US = VRM= 225 V(pk) 1N6662, US = VRM= 400 V(pk) 1N6663, US = VRM= 600 V(pk) NOTE: Leaded devices from the same lot may be used in lieu of U-suffix devices. C7 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking p