DLA MIL-PRF-19500 528 B-2008 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6032 AND 2N6033 JAN JANTX AND JANTXV.pdf
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1、 MIL-PRF-19500/528B 18 December 2008 SUPERSEDING MIL-PRF-19500/528A 23 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6032 AND 2N6033, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Depart
2、ment of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided f
3、or each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). * 1.3 Maximum ratings. Types PT(1) TC= +25C RJCVCBOVCEOVEBOIBICTJand TSTG2N6032 2N6033 W 140 140 C/W 1.25 1.25 V dc 120 150 V dc 90 120 V dc 7.0 7.0 A dc 10 10 A dc 50 40 C -65 to +200 -65 to
4、+200 (1) Between TC= +25C and TC= +200C, linear derating factor (average) = 800 mW/C. 1.4 Primary electrical characteristics at TA= +25C. hFE1 Cobo |hfe| .1 MHz f 1 MHz IE= 0 A dc VCB= 10 V dc IC= 50 A dc VCE= 2.6 V dc IC= 40 A dc VCE= 2.0 V dc pF f = 5 MHz IC= 2.0 A dc VCE= 10 V dc Types Min Max Mi
5、n Max Min Max Min Max 2N6032 2N6033 10 50 10 50 1,000 1,000 10 10 40 40 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.
6、dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009.
7、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 2 1.4 Primary electrical characteristics at TA= +25C - Continued. VBE(sat)VCE(sat)switching IC= 50 A dc IB= 5 A dc IC= 50 A dc IB= 5 A dc IC= 40 A dc IB= 4 A dc tontoffV dc V dc V dc
8、 (see table I and figure 4) s Type Min Max Min Max Min Max Min Max Min Max 2N6032 2N6033 2.0 1.3 1.0 0.5 0.5 2.0 2.0 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited i
9、n other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this spe
10、cification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are th
11、ose cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assis
12、t.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of
13、 this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 3 Dimensions Ltr Inches M
14、illimeters Notes Min Max Min Max CD .875 22.22 3 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .050 .135 1.27 3.43 L1.050 1.27 5, 9 LD .059 .061 1.50 1.55 5, 9 LL .312 7.92 5 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1.205 .225 5.
15、21 5.72 4, 5 S1.655 .675 16.64 17.14 4 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gauge
16、is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. * 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1.
17、 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions (similar to TO-3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 4 3. REQUIREMENTS * 3.1 General. The individual item r
18、equirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
19、before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as spe
20、cified in MIL-PRF-19500 and figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance chara
21、cteristics are as specified in paragraph 1.3, 1.4, and table I. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other d
22、efects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I a
23、nd II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet
24、that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted
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