DLA MIL-PRF-19500 510 J-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPE 2N6249 2N6249T1 2N6249T3 2N6250 2N6250T1 2N6250T3 2N6251 2N6251T1 2N6251T3 JAN JANTX JANTXV JANS .pdf

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1、 MIL-PRF-19500/510J 13 December 2013 SUPERSEDING MIL-PRF-19500/510H 14 January 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, JAN, JANTX, JANTXV, JANS, JANSM, JANSD,

2、JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall

3、consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are

4、provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, w

5、hich have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (JANHC and JANKC), figure 3 (TO-254AA), and figure 4 (TO-257AA). 1.3 Maximum ratings at TA= +25C, unless otherwise specified. Type PTTA= +25C PT(1) TC= +25C RJC (2) VCBOVCEOVEBOICIBTJ and TSTGW W C/W

6、 V dc V dc V dc A dc A dc C 2N6249 6.0 175 1.0 300 200 6.0 10 5.0 2N6249T1 6.0 175 1.0 300 200 6.0 10 5.0 -65 2N6249T3 4.0 (3) 125 1.3 300 200 6.0 10 5.0 2N6250 6.0 175 1.0 375 275 6.0 10 5.0 to 2N6250T1 6.0 175 1.0 375 275 6.0 10 5.0 2N6250T3 4.0 (3) 125 1.3 375 275 6.0 10 5.0 +200 2N6251 6.0 175 1

7、.0 450 350 6.0 10 5.0 2N6251T1 6.0 175 1.0 450 350 6.0 10 5.0 2N6251T3 4.0 (3) 125 1.3 450 350 6.0 10 5.0 (1) For temperature-power derating curves, see figures 5 and 6. (2) For thermal impedance curves, see figures 7, 8, and 9. (3) For TO-257 devices with typical mounting and small footprint, conse

8、rvatively rating at 125 W and 1.3C/W only. AMSC N/A FSC 5961INCH POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you

9、 may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be completed by 13 February 2014. Provided by IHSNot for ResaleNo reproduction or net

10、working permitted without license from IHS-,-,-MIL-PRF-19500/510J 2 1.4 Primary electrical characteristics at TA= +25C. hFE1Cobohfe Pulse response Types Limits IC= 10 A dc VCE= 3 V dc VCB= 10 V dc IC= 0 100 kHz f 1 MHz VCE= 10 V dc IC= 1 A dc f = 1 MHz tontoffpF s s 2N6249, 2N6249T1, 2N6249T3 Minimu

11、m Maximum 10 50 500 2.5 15.0 2.0 4.5 2N6250, 2N6250T1, 2N6250T3 Minimum Maximum 8 50 500 2.5 15.0 2.0 4.5 2N6251, 2N6251T1, 2N6251T3 Minimum Maximum 6 50 500 2.5 15.0 2.0 4.5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specif

12、ication. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requiremen

13、ts of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless oth

14、erwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of t

15、hese documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a co

16、nflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networkin

17、g permitted without license from IHS-,-,-MIL-PRF-19500/510J 3 Ltr Dimensions Note Inches Millimeters Min Max Min Max CD .875 22.23 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .050 .135 1.27 3.43 LD .038 .053 0.97 1.35 3, 5 LL .312 .500 7.92 12.70 3 L1.050 1.27 5 MHD .1

18、51 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 2 PS1.205 .25 5.21 6.35 2, 3 S1.665 .675 16.89 17.15 2 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. These dimensions should be measured at points .050 (1.27 mm) to .055 (1.40 mm) belo

19、w seating plane. When gage is not used, measurement will be made at seating plane. 3. Two leads. 4. Collector shall be electrically connected to the case. 5. LD applies between L1and LL maximum. Lead diameter shall not exceed twice LD within L1. 6. In accordance with ASME Y14.5M, diameters are equiv

20、alent to symbology. FIGURE 1. Physical dimensions (similar to TO-3). TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 4 Dimensions Ltr. Inches Millimeters Min Max Min Max A, C .205 .215 5.21 5.46 DESIGN DATA Metallization: Top:

21、 Aluminum 54,000 minimum, 60,000 nominal. Back: Al/Ti/Ni/Au 10,000 minimum, 12,500 nominal. Back side: Collector. Chip thickness: .012 inch (0.305 mm) .002 inch (0.051 mm). Bonding pad: B = .018 inch (0.46 mm) x .040 (1.02 mm). E = .018 inch (0.46 mm) x .040 (1.02 mm). FIGURE 2. JANHCB and JANKCB (B

22、 version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 5 Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .530 .550 13.46 13.97 LO .150 B

23、SC 3.81 BSC LS .150 BSC 3.80 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Methods u

24、sed for electrical isolation of terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL203 (ceramic). 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Dimensions and configuration 2N6249T1, 2N6250T1, and 2N6251T1 (TO-254AA). TO-254 P

25、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 6 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Methods used for electrical isolation of the terminals feedthroughs shall employ materials

26、that contain a minimum of 90 percent AL2O3 (ceramic). 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Dimensions and configuration for 2N6249T3, 2N6250T3, and 2N6251T3 (TO-257AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190

27、 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Emitter TO-257 Provided by IHSNot f

28、or ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be produ

29、cts that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as spe

30、cified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-3), figure 2 (die), figure 3 (TO-254AA), and figure 4 (TO-257AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with

31、 MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-P

32、RF-19500 and this document. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characterist

33、ics are as specified in 1.3 and 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately

34、precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIF

35、ICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II, and III). 4.2 Qualification inspection. Qualification inspection sh

36、all be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

37、case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qua

38、lification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 8 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table EIV of MIL-PRF-19500 and as specified herein. The following measuremen

39、ts shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MIL-PRF-19500) Measurements JANS JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.1) Thermal impedance, method 3

40、131 of MIL-STD-750 (see 4.3.1) 9 ICEX1and hFE111 ICEX1and hFE1ICEX1= 100 percent of initial value or 2 A dc, whichever is greater; hFE1= 15 percent of initial value. ICEX1and hFE112 See 4.3.2 See 4.3.2 13 Subgroup 2 and 3 of table I herein; ICEX1= 100 percent of initial value or 2 A dc, whichever is

41、 greater; hFE1= 25 percent of initial value. Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater; hFE1= 25 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO-254AA p

42、ackages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. * (1) Thermal impedance (ZJC) limits shall not exceed figures 7, 8, or 9 thermal impedance curves. This test shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need

43、to be repeated in screening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance withmethod 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit used in scre

44、en 3c and table I, subgroup 2 shall comply with the thermal impedance graphs on figures 7, 8, or 9 (less than or equal to the curve value at the same tHtime) and/or shall be less than the process determined statistical maximum limit as outlined in method 3131.4.3.2 Power burn-in conditions. Power bu

45、rn-in conditions are as follows: VCB= 10-30 V dc, TA= +30C maximum, TJ= +175C minimum. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS re

46、quirements; the JANHC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/510J 9 * 4.3.4 Dielectric withstanding voltage. a. Magnititude of test voltage900 V dc. b. Duration of application of test voltage15 secon

47、ds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conf

48、ormance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.