DLA MIL-PRF-19500 502 F-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N6058 AND 2N6059 JAN JANTX AND JANTXV.pdf

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1、 MILPRF19500/502F 12 October 2012 SUPERSEDING MILPRF19500/502E 4 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6058 AND 2N6059, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of

2、the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance

3、 are provided for each encapsulated device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO204AA (similar to TO3) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTVCBOVCEOVEBOICIBTJand TSTGTC= +25C (1) TC= +100C

4、W W V dc V dc V dc A dc A dc C 2N6058 150 75 80 80 5 12 0.2 55 to +175 2N6059 150 75 100 100 5 12 0.2 55 to +175 (1) Derate linearly at 1.00 W/C above TC +25C. AMSC N/A FSC 5961 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime ATTN: VAC, P.O. Box 3990

5、, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with th

6、is revision shall be completed by 11 January 2013. INCHPOUND Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Limit hFE2(1) VCE= 3 V dc hFE3(1) VCE= 3 V d

7、c hfe VCE= 3 V dc |hfe| VCE= 3 V dc Cobo100 kHz f 1 MHz RJCIC= 6 A dc IC= 12 A dc IC= 5 A dc f = 1 kHz IC= 5 A dc f = 1 MHz VCB= 10 V dc IE= 0 Minimum Maximum 1,000 18,000 150 1,000 10 250 pF 300 C/W 1.0 Limit VBE(sat)(1) VCE(sat)1(1) VCE(sat)2(1) Pulse response (2) IC= 12 A dc IB= 120 mA dc IC= 12

8、A dc IB= 120 mA dc IC= 6 A dc IB= 24 mA dc tontoffMinimum Maximum V dc 4.0 V dc 3.0 V dc 2.0 s 2 s 10 (1) Pulsed (see 4.5.1). (2) See figure 4 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specifica

9、tion. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

10、of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherw

11、ise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these document

12、s are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict be

13、tween the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitt

14、ed without license from IHS-,-,-MILPRF19500/502F 3 FIGURE 1. Physical dimensions and schematic circuit (TO204AA, similar to TO3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 4 Symbol Dimensions Notes Inches Millimeters Min Max Mi

15、n Max CD .875 22.23 CH .250 .328 6.35 8.33 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 3 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 4 , 5 LL .312 .500 7.92 12.7 4 L1.050 1.27 4 , 5 MHD .151 .161 3.84 4.09 6 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 7, 8 PS1.205 .225 5.21 5.72 7, 4,

16、 8 S1.655 .675 16.64 17.15 7 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Body contour is optional within zone defined by dimension CD. 3. At both ends. 4. Both terminals. 5. Dimension LD applies between dimension L1and LL. Lead diameter shall not exceed

17、 twice dimension LD within dimension L1. Diameter is uncontrolled in dimension L1. 6. Two holes. 7. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement shall be made at seating plane. 8. The seating plan

18、e of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 9. The collector shall be electrically connected

19、 to the case. 10. In accordance with ASME Y14.5M, diameters are equivalent to symbology. FIGURE 1. Physical dimensions and schematic circuit (TO204AA, similar to TO3) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 5 3. RE

20、QUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the appli

21、cable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500 and as follows: IM The measurement current applied to forward bias the junction

22、for measurement of VBE. IH The collector current applied to the device under test during the heating period. tH The duration of the applied heating power pulse. tSW Sample window time during which final VBEmeasurement is made. 3.4 Interface requirements and physical dimensions. The interface require

23、ments and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (TO204AA, similar to TO3) herein. 3.4.1 Lead finish. The lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the ac

24、quisition document (see 6.2). 3.4.2 Polarity. The polarity of the device types shall be as shown on figure 1. The collector shall be electrically connected to the case. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance characteristics. Unless otherwise specifie

25、d herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in q

26、uality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance i

27、nspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500, and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was a

28、warded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IH

29、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 6 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with ta

30、ble I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANTX and JANTXV levels only 3c (1) Thermal impedance, see 4.3.1 9 ICEX1.11 ICEX1, hFE2; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. 12 S

31、ee 4.3.2. 13 See table I, subgroup 2 herein. ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 40 percent of initial value. (1) This test shall be performed anytime after temperature cycling, screen 3a, and does not need to be repeated in screening requirements. 4.3.1 Therma

32、l impedance. The thermal impedance measurements shall be performed in accordance with test method 3131 of MILSTD750 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s maximum. The thermal impedance limit used in sc

33、reen 3c and table I, subgroup 2 herein shall be set statistically by the supplier. See table II, subgroup 4 herein. 4.3.2 Power burn-in conditions. The power burn-in conditions shall be as follows: TJ= +162.5C 12.5C; VCE 10 V dc, TA +100C. NOTE: No heat sink or forced air cooling on the devices shal

34、l be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-points) sha

35、ll be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVIB (JAN, JANTX, and JANTXV) of MILPRF19500 and as follows. Electrical measurements (end-points) s

36、hall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Conditions B3 1037 VCB 10 V dc; TJ= between cycles +100C. ton= toff= 3 minutes for 2,000 cycles. No heat sink or forced-air cooling on the devices

37、shall be permitted. B5 3131 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 7 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E

38、VII of MILPRF19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 lbs (4.54 Kg), t = 15s. C

39、5 3131 See 4.3.1, RJC= 1C/W (maximum). C6 1037 VCB 10 V dc; TJbetween cycles +100 C; ton= toff= 3 minutes for 6,000 cycles. No heat sink or forced-air cooling on device shall be permitted. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

40、 subgroup testing in appendix E, table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.5 Method of inspection. Meth

41、ods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse response measurements. The conditions for pulse response measurement shall be as specified in section 4 of MILSTD750. 4.6 Delta measurements. The requirements for delta measurements for groups B, C, and E i

42、nspection shall be as specified below. (1) (2) (3) Step Inspection MILSTD750 Symbol Limit Method Conditions 1 Forward-current transfer ratio 3076 VCE= 3 V dc; IC= 6.0 A dc; pulsed (see 4.5.1). hFE240 percent change from initial reading. (1) The delta measurement for group B, quality levels (JAN, JAN

43、TX and JANTXV) shall be as follows: In addition to the measurements specified for subgroups 3 and 6 of table EVIB of MILPRF19500, the measurements of step 1 shall also be taken. (2) The delta measurement for group C shall be as follows: In addition to the measurements specified for subgroup 6 of tab

44、le EVII of MILPRF19500, the measurements of step 1 shall also be taken. (3) The delta measurement for group E shall be as follows: In addition to the measurements specified for subgroups 1 and 2 of table EIX of MILPRF19500, the measurements of step 1 shall also be taken. Provided by IHSNot for Resal

45、eNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/502F 8 TABLE I. Group A inspection. Inspection 1/ MILSTD750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.1 ZJCC/W Collector

46、to emitter breakdown voltage 3011 Bias condition D, IC= 100 mA dc; pulsed (see 4.5.1) V(BR)CEO2N6358 80 V dc 2N6359 100 V dc Collector to emitter cutoff current 3041 Bias condition A, VEB1= 1.5 V dc ICEX12N6358 VCE= 80 V dc 10 A dc 2N6359 VCE= 150 V dc 10 A dc Collector to emitter cutoff current 304

47、1 Bias condition D ICEO2N6058 VCE= 40 V dc 1.0 mA dc 2N6059 VCE= 50 V dc 1.0 mA dc Emitter to base cutoff current 3061 Bias condition D, VEB= 5 V dc IEBO2.0 mA dc Base to emitter voltage (nonsaturated) 3066 Test condition B, VCE= 3 V dc; IC= 6 A dc VBE2.8 V dc Base to emitter voltage (saturated) 306

48、6 Test condition A, IC= 12 A dc; IB= 120 mA dc; pulsed (see 4.5.1) VBE(sat)4.0 V dc Collector to emitter voltage (saturation voltage) 3071 IC= 12 A dc; IB= 120 mA dc; pulsed (see 4.5.1) VCE(sat)13.0 V dc Collector to emitter voltage (saturation voltage) 3071 IC= 6 A dc; IB= 24 mA dc; pulsed (see 4.5.1) VCE(sat)22.0 V dc Forward-current transfer ratio 3076 VCE= 3 V dc; IC= 1 A dc; pulsed (see 4.5.1) hFE11,000 Forward-current transfer ratio 3076 VCE= 3 V dc; IC= 6 A dc; pulsed (see 4.5.1) hFE21,000 18,000 Forward-current trans