DLA MIL-PRF-19500 446 E-2008 SEMICONDUCTOR DEVICE SILICON HIGH-POWER SINGLE PHASE FULL WAVE BRIDGE RECTIFIER TYPES SPA25 SPB25 SPC25 AND SPD25 JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/446E 15 December 2008 SUPERSEDING MIL-PRF-19500/446D 13 September 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, AND SPD25, JANTX AND JANTXV This specification is approved for use b

2、y all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for silicon, single phase, full wave rect

3、ifiers. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Type number VRWMBridge (1) IO1at TC= +55C Bridge (2) IO2at TC= +100C IF(surge) IO= 25 A dc TC= +55C tp= 8.3 ms Barometric pressure redu

4、ced trrIF= 0.5 A IR= 1.0 A Irec= 0.25 A SPA25 SPB25 SPC25 SPD25 V (pk) 100 200 400 600 A dc 25 25 25 25 A dc 15 15 15 15 A (pk) 150 150 150 150 mm Hg 8 8 8 8 s 2.5 2.5 2.5 2.5 (1) Derate from 25 A dc at +55C to 15 A dc at +100C (222 mA dc/C). (2) Derate from 15 A dc at +100C to 0 A dc at +150C (300

5、mA dc/C). Operating temperature: -65C to +150C. Storage ambient temperature: -65C to +150C. INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.

6、dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 March 2009

7、. AMSC N/A FSC 5961Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not includ

8、e documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3,

9、4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these

10、 documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at

11、http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text

12、 of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specif

13、ied in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 a

14、nd 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Internal

15、 construction. The rectifier bridge shall consist of a metal and plastic encased assembly of discrete diodes. Each discrete diode shall be a glass-to-metal, ceramic-to-metal, or fused metal oxide-to-metal hermetically sealed package. No multiple diodes for each leg construction shall be permitted. T

16、he silicon die in each discrete diode shall be metallurgically bonded directly to the terminal pins. The completed assembly of diodes and other internal structures shall be encapsulated in a plastic material which polymerizes to a rigid condition by virtue of a chemical cross-linking mechanism. The

17、rectifier bridge shall be free of voids either visible or as evidenced by failure to pass the environment test specified herein. Only those discrete diodes which have met these requirements shall be used in the rectifier bridge. Discrete diodes shall be manufactured and tested by the rectifier bridg

18、e manufacturer. 3.4.2 Terminal finish. Terminal finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking

19、permitted without license from IHS-,-,-MIL-PRF-19500/446E 3 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Polarity shall be marked on the terminal side of the device. Terminal numbers are for reference and do not have to be marked on the bridge. 3. Point

20、at which TCis read shall be in metal part of case as shown on drawing. 4. The locating pin shall be adjacent to the positive (+) terminal. 5. Insulating sleeve shall be alumina (AL2O3) composite material or equivalent. 6. The areas defined by the dimensions “L3“ and “L4“ are both acceptable for wire

21、 wrap and soldering. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. SEE NOTE 3 SEE DETAIL SENOTE SENOTE Dimensions Inches Millimeters Ltr Min Max Min Max C1.552 .572 14.02 14.53 C2.624 .760 15.85 19.30 C3.312 .380 7.92 9.65 C4.495 .512 12.5

22、7 13.00 D1.189 .195 4.80 4.95 D2.057 .067 1.45 1.70 D3.108 .118 2.74 3.00 D4.141 .151 3.58 3.84 D5.225 .260 5.72 6.60 H1.690 1.060 17.53 26.92 H2.300 .500 7.62 12.70 H3.040 .060 1.02 1.52 H4.042 .062 1.07 1.57 L1.370 .560 9.40 14.22 L2.307 .365 7.80 9.27 L3.089 .099 2.26 2.52 L4.132 .163 3.35 4.14 L

23、5.026 .036 0.66 0.91 W 1.104 1.144 28.04 29.06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 4 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devi

24、ces. Initial container package marking shall be in accordance with MIL-PRF-19500. 3.6 Polarity. Polarity shall be as marked on figure 1. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herei

25、n. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group A herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, servic

26、eability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspecti

27、on shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.3 Screening (JANTX and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the li

28、mits of table I herein shall not be acceptable. The JANTXV requirements apply to the internal discrete diodes only, not to the assembly. 4.3.1 Discrete diode screening. One hundred percent of the internal discrete diodes shall be subjected to the following. Measurement Screen (see table E-IV of MIL-

29、PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.5.3) 9 Not applicable 11 IR1and VF112 See 4.3.1.1 (2) 13 Subgroup 2 of table I herein. VF1= 0.1 V dc; IR1 = 100 percent of initial value or 250 nA dc, whichever is greater (1) Shall be performed anytime after screen 3a. (2) Except th

30、ermal impedance, if already performed. 4.3.1.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition B, TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750 or 4.5 herein, VRWM= rated VRWM(see 1.3), IO= 3 A dc, f = 50 -

31、 60 Hz. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 5 * 4.3.2 Assembly screening. One hundred percent of the completed assemblies shall be subjected to the following. Screen (see table E-IV of MIL-PRF-19500) Measurement Tempera

32、ture cycling Method 1051 of MIL-STD-750, condition F. End points (1) Subgroup 2 of table I herein. Dielectric withstanding voltage See 4.5.1 (1) Except thermal impedance. 4.4 Conformance inspection. Conformance inspection shall be performed on the finished rectifier assemblies in accordance with MIL

33、-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

34、table E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 (except thermal impedance) herein. * 4.4.2.1 Group B inspection, table E-VIB of MIL-PRF-19500. Subgroup Method Conditions B1 2026 Immerse to i

35、nsulating sleeve. B2 1051 Condition F, 25 cycles. B2 1071 Not applicable. B3 1027 IO= 0 A dc; TA= +150C; VRWM= 80 percent rated VRWM(see 1.3), f = 60 Hz, n = 10, c = 0. B5 Operational thermal cycling, (see 4.5.4). B5 3105 Junction temperature test (see 4.5.2). B6 Not applicable. 4.4.3 Group C inspec

36、tion. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 (except thermal impedance) herein. Provided by I

37、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 6 * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Conditions C2 1056 Not applicable. C2 2036 Test condition A, 6 pounds, t = 30 seconds. C2 2036 Test condition D1, t =

38、10 seconds, 5 inch-pounds. C2 1071 Not applicable. C5 1001 Pressure = 8 mm Hg; IR= 2.0 A dc maximum, VR= rated VRWM(see 1.3), (applied between all terminals to the case), t = 60 seconds. C5 4066 VRWM= 0 V, bridge IO = 25 A dc (entire bridge biased); TC= 55C + 10C,- 0C; IFSM= 150 A (pk) (each device

39、for each bridge leg); tp= 8.3 ms; ten surges for each leg at maximum 1 minute intervals; n = 22, c = 0. Alternate condition: Each leg may be biased separately to IO= 12.5 A dc. All other conditions are the same as above. C6 1026 IO = 0 A dc; TA= 150C; VRWM= 80 percent rated VRWM(see 1.3), f = 60 Hz.

40、 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Dielectric withstanding voltage. This test shall be performed with the metal case of the assembly connected to ground and all terminals connected to the high potential side of a dc

41、 power supply or a scope display test set. The voltage applied between the terminals and the case, shall be 2,800 volts dc. Any discontinuity or dynamic instability of the trace, or a breakdown current in excess of 10 A dc, shall be cause rejection. 4.5.2 Junction temperature test. This test shall b

42、e performed in accordance with method 3105 of MIL-STD-750. The maximum junction temperature for any diode in the bridge at the below specified conditions shall be 175C maximum. The test conditions shall be as follows: a. TC= 55C or TC= 100C. b. IO= 25 A dc, IO= 15 A dc. c. Iref= 10 mA dc, Iref= 10 m

43、A dc. 4.5.3 Thermal impedance. VFmeasurement shall be performed in accordance with method 3101 of MIL-STD-750. The following parameters shall apply: (1) Measurement current (IM): 10 mA; (2) Heating current (IH): 10 A minimum; (3) Heating time (tH): 10 ms; (4) Measurement time delay (tMD): 70 s maxim

44、um. The maximum limit for ZJXunder these test conditions is 1.5 C/W. 4.5.4 Operational thermal cycling. This test shall be performed by connecting a single phase 50 - 60 Hz sine wave input to the ac terminals of the bridge. The resistive load or input voltage shall be made variable in order to maint

45、ain a rated bridge output current of 25 A dc. Bridge case temperature shall be maintained at 55C except during the cooling cycle when case temperature shall be permitted to drop 20C maximum. Life-test duration shall be 2,000 cycles with a heating time of 8 minutes, +10, -0 minutes and a cooling time

46、 2 minutes. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 7 TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal i

47、mpedance/leg 3101 See 4.5.3 ZJX1.5 C/W Forward voltage/leg 4011 IF= 39 A dc (pk), tp= 8.3 ms; duty cycle 2 percent VF10.9 1.40 V (pk) Reverse current/leg 4016 DC method; VR= rated VRWM(see 1.3) IR12.0 A dc Breakdown voltage/leg SPA25 SPB25 SPC25 SPD25 4021 IR= 50 A dc V(BR)1110 220 440 660 V dc V dc

48、 V dc V dc Subgroup 3 High temperature operation: TC= 100C Reverse current/leg 4016 DC method; VR= rated VRWM(see 1.3) IR2150 A dc Low temperature operation: TA= -55C Reverse current/leg 4016 DC method; VR= rated VRWM(see 1.3) IR350 A dc Subgroup 4 Reverse recovery time/leg 4061 Condition B; IF= 0.5

49、 A, IR= 1.0 A, Irec= 0.25 A trr2.5 s Subgroups 5 and 6 Not applicable 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/446E 8 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in