DLA MIL-PRF-19500 439 G-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPES 2N5038 AND 2N5039 JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/439G 17 February 2012 SUPERSEDING MIL-PRF-19500/439F 18 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N5038 AND 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments

2、 and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-s

3、witching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (TO-3) and figure 2 (JANHC and JANKC). * 1

4、.3 Maximum ratings. TA= +25C (unless otherwise specified). PT(1) at TC= +25C VCBOVCEOVEBOIBICTJand TSTG2N5038 2N5039 W 140 140 V dc 150 125 V dc 90 75 V dc 7.0 7.0 V dc 5 5 A dc 20 20 C -65 to +200 -65 to +200 * (1) Derate linearly 800 mW/C for TA +25C, see figure 3. 1.4 Primary electrical character

5、istics at TA = +25C. Limit hFE3(1) VCE= 5.0 V dc IC= 12 A dc (2N5038) IC= 10 A dc (2N5039) hfe VCE= 10 Vdc IC= 2.0 A dc f = 5 MHz VCE(sat)1(1) IC= 12 A dc IB= 1.2 A dc (2N5038) IC= 10 A dc IB= 1.0 A dc (2N5039) CoboVCB= 10 V dc IE= 0 100 kHz f 1MHz Pulse Response RJC (2)tontoffMin Max 15 12 48 V dc

6、1.0 pF 500 s 0.5 s 2.0 C/W 1.25 (1) Pulsed (see 4.5.1). (2) See figure 4 for thermal impedance curve. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Sem

7、iconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 17

8、May 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 - .055 inch (1.27 mm - 1.4

9、0 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) conca

10、ve to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Terminal 1 is emitter; terminal 2 is base; case is collector. FIGURE 1. Physical dimensions, (TO-3). Symbol Dimension Notes Inches Millimeters Min Max Min Max CD .875 22.22 CH .270 .380 6.86 9.65 HR .4

11、95 .525 12.57 13.33 4 HR1.131 .188 3.33 4.78 4 HT .060 .135 1.52 3.43 LD .038 .053 0.97 1.35 4, 6 LL .312 .500 7.92 12.70 L1.050 1.27 6 MHD .151 .165 3.84 4.19 4 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3 PS1.205 .225 5.21 5.72 3 S1 .655 .675 16.64 17.15 TO-3 Provided by IHSNot for Resal

12、eNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 3 NOTES: 1. Chip size: .200 X .200 inch (5.08 mm) .003 inch (0.08 mm). 2. Chip thickness: .015 inch (0.38 mm). 3. Top metal: Aluminum 30,000 min, 33,000 nominal. 4. Back metal: AlTiNiAu for solder mount 5,000A/2

13、,000A/7,000A/5,000 Ang or Al/Ti/Ni/Ag 15,000/5,000/10,000/10,000. 5. Backside: Collector. 6. Bonding pad: B = .027 inch (0.69 mm) X .053 inch (1.35mm) .002 inch (0.05 mm). E = .023 inch (0.58 mm) X .059 inch (1.50 mm) .002 inch (0.05 mm). FIGURE 2. JANHC and JANKC (A-version die dimensions). Provide

14、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other

15、 sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specificat

16、ion, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

17、 in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil

18、/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and t

19、he references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 an

20、d as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, s

21、ymbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-3) and figure 2 (die). 3.4.1 Lead finish. Lead fin

22、ish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless

23、 otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such

24、a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 5 4. VERIFICATION 4.1 Classification of inspections. Th

25、e inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Gr

26、oup E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not perform

27、ed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.3 Screening (JANS, JANTXV and JANTX levels). Screening shal

28、l be in accordance with table E-IV of MIL-PRF19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS JANTX and JANTXV

29、 levels 3c (1) Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 ICEX1, hFE2, and hFE3 ICEX111 ICEX1, hFE2, and hFE3; ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; hFE3= 20 percent of the initial value. ICEX1, hFE2, and hFE3; ICEX1= 100 percent of initial value or

30、1 A dc, whichever is greater. 12 See 4.3.1 See 4.3.1 13 (2) Subgroup 2 and 3 of table I herein; ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; hFE3= 20 percent of initial value. Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; h

31、FE3= 20 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 6

32、4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +187.5C 12.5C; VCB= 60 V dc 5 V dc; TA +100C. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500. * 4.3.3 Thermal impedance. The thermal impedance measurements shal

33、l be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See figure 4 and table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspect

34、ion shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

35、subgroup testing in table E-Via (JANS) and table E-VIB (JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirement shall be in accordance with 4.5.3 herein. * 4.4.2.1 Group B inspection, table E-V

36、IA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A. B4 1037 2,000 cycles; VCB= 10 V dc; TJbetween cycles = +100C; Ton= Toff 1 minute. B5 1027 VCE 20 V dc; PT= 80 W at TC= +100C or adjusted as required by the chosen TCto give an average lot TJ= +225C. * B6 3131 See 4.5.2.

37、B7 3053 Load condition C; (unclamped inductive load) (see figure 5); TC= +25C; duty cycle 10 percent; Rs= 0.1; tr= tp 500ns, for qualification and large lot QCI, sample size = 22, c = 0; for small lot QCI, sample size = 6, c = 0. TEST 1: tp= 5 ms (vary to obtain IC); RBB1= 2; VBB1= 10 V dc; RBB2= 20

38、; VBB2= 4 V dc; VCC= 10 V dc; IC= 20 A; L = 70 H, 0.1. TEST 2: tp= 5 ms (vary to obtain IC); RBB1= 40; VBB1= 10 V dc; RBB2= 20; VBB2= 4 V dc; VCC= 10 V dc; IC= 4.5 A; L = 500 H, 0.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G

39、7 * 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV). Electrical end-points shall be in accordance with table I, subgroup 2, and 4.5.3 herein. Subgroup Method Condition B3 2037 Test condition A B3 1037 2,000 cycles; VCB= 10 V dc; TJbetween cycles +100C; ton= toff 1 minute * B5 3131 S

40、ee 4.5.2, RJCshall be 1.25C/W. B7 3053 Load condition C; (unclamped inductive load) (see figure 5); TC= +25C; duty cycle 10 percent; Rs= 0.1; tr= tp 500 ns, for qualification and large lot QCI, sample size = 22, c = 0; for small lot QCI, sample size = 6, c = 0. TEST 1: tp= 5 ms (vary to obtain IC);

41、RBB1= 2; VBB1= 10 V dc; RBB2= 20; VBB2= 4 V dc; VCC= 10 V dc; IC= 20 A; L = 70 H, 0.1. TEST 2: tp= 5 ms (vary to obtain IC); RBB1= 40; VBB1= 10 V dc; RBB2= 20; VBB2= 4 V dc; VCC= 10 V dc; IC= 4.5 A; L = 500 H, 0.1. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with th

42、e conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with 4.5.3 herein. 4.4.3.1 Group C inspection, table E-VI

43、I of MIL-PRF-19500. Subgroup Method Condition C2 1056 Test condition B. C2 2036 Test condition A, weight = 10 lbs., t = 15 s. C6 1037 6,000 cycles; VCB= 10 V dc; TJbetween cycles +100C; ton= toff 1 minute. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests a

44、nd conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-points) and delta measurements shall be in accordance with table I, subgroup 2 herein and 4.5.3 herein. 4.5 Method of inspection. Methods of inspection shall be as specified

45、 in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/439G 8 * 4.5.2 Thermal resistance.

46、The thermal resistance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See figure 4 and table II, group E, subgroup 4 herein. 4.5.3 D

47、elta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Symbol Limit Unit (1) (2) (3) (4) Method Conditions Min Max 1 Collector to emitter voltage (saturated) 2N5038 2N5039 3071 IC= 12 A dc, IB= 1.2 A dc IC= 10 A dc, IB= 1.0 A dc VCE(sat)150 mV dc change from i

48、nitial value. 2 Collector to emitter cutoff current 2N5038 2N5039 3041 Bias condition A; VBE= -1.5 V dc VCE= 100 V dc VCE= 85 V dc ICEX1100 percent of initial value or 1A dc, whichever is greater. 3 Forward-current transfer ratio 2N5038 2N5039 3076 VCE= 5.0 V dc; IC= 12 A dc IC= 10 A dc hFE325 percent change from initial value. (1) Devices which exceed the table I limits, herein, for this test shall not be acceptable. (2) The electrical measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 4, see step 1 above. b. Subgroup 5, see steps 1, 2, and 3 above. (3) The e