DLA MIL-PRF-19500 399 F-2011 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N3960 AND 2N3960UB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXVR JANTXVF JANTXVGF.pdf

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1、 MIL-PRF-19500/399F 29 July 2011 SUPERSEDING MIL-PRF-19500/399E 25 March 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960 AND 2N3960UB JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JA

2、NSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The req

3、uirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and

4、two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements

5、. 1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. PT(1) VCBOVCEOVEBOTJand TSTGTA= +25C mW V dc V dc V dc C 400 20 12 4.5 -65 to +200 (1) Derate linearly 2.3 mW/C above TA= +25C. AMSC N/A FSC 5961 IN

6、CH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 September 2011. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emaile

7、d to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL

8、-PRF-19500/399F 2 1.4 Primary electrical characteristics. Limits hFE1hFE2VCE(sat)1VCE(sat)2Cobo|hfe| VBE1VBE2VCE = 1.0 V dc VCE= 1.0 V dc IC = 1.0 mA dc IC= 30 mA dc VCB= 4 V dc IE= 0 VCE= 4 V dc IC= 5.0 mA IC= 1.0 mA dc IC= 30 mA dc IC= 1.0 mA dc IC= 10 mA dc IB= 0.1 mA dc IB= 3.0 mA dc 100 kHz f 1

9、 MHz dc f = 100 MHz VCE= 1.0 V dc VCE= 1.0 V dc V dc V dc pF V dc V dc Min 40 60 13 Max 300 0.2 0.3 2.5 0.8 1.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other

10、 sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specificat

11、ion, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

12、 in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil

13、/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the r

14、eferences cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1

15、9500/399F 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,11 LL .500 .750 12.70 19.05 7 LU .016 .019 0.41 0.48 12 L1 .050 1.27 7 L2 .250 6.35 7 P .100 2.54 5 Q .040 1.02 4 T

16、L .028 .048 0.71 1.22 3 TW .036 .046 0.91 1.17 9 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .0

17、10 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods

18、 or by gauge. 7. Symbol LD applies between L1and L2. Dimension LD applies between L2and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. Measu

19、red in a zone beyond .250 (6.35 mm) from the seating plane. 12. Measured in the zone between .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 14. Lead 1 is emitter, lead 2 is base, and case is collector. FIGURE 1.

20、Physical dimensions (similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/399F 4 Ltr. Dimensions Note Ltr. Dimensions Note Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .0

21、35 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: NOTES: 1. Dimensions are in inches. 2. Millimeters are given for gener

22、al information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for

23、 2N3960UB, surface mount. UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/399F 5 Die size: .016 x .016 inch (0.41 x 0.41 mm). Die thickness: .008 .0016 inch (0.20 0.041 mm). Base pad: .0027 x .0027 inch 0.069 x 0.069 mm). Emitter pad

24、: .0027 x .0027 inch. Back metal: Gold, 6500 1950 Ang. Top metal: Aluminum, 17500 2500 Ang. Back side: Collector. Glassivation: SiO2, 7500 1500 Ang. FIGURE 3. JANHC and JANKC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

25、-MIL-PRF-19500/399F 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying acti

26、vity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface

27、 and physical dimensions shall be as specified in MIL-PRF-19500 and figures 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be speci

28、fied in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performa

29、nce characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Devices shall be marked in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall

30、 consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix and the “UB“ suffix can also be omitted. The radiation hardened designator M, D, P, L, R, F, G,

31、 or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability,

32、 or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and Tables I, II, III). 4.2 Qualification inspection. Qualifica

33、tion inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the

34、performance of Table IV tests, the tests specified in table IV herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in acc

35、ordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/399F 7 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The follow

36、ing measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels 3c Thermal impedance Method 3131 of MIL-STD-750 (see 4.3.3). Thermal imp

37、edance Method 3131 of MIL-STD-750 (see 4.3.3). (1) 9 ICEX2and hFE2Not applicable 10 VCB= 12 V, 48 hours minimum. VCB= 12 V, 48 hours minimum. 11 ICEX2and hFE2ICEX2= 100 percent of initial value or 2 nA dc, whichever is greater; hFE2= 20 percent. ICEX2and hFE212 See 4.3.1 See 4.3.1 13 Subgroups 2 and

38、 3 of table I herein; ICEX2= 100 percent of initial value or 2 nA dc, whichever is greater; hFE2= 20 percent. Subgroup 2 of table I herein; ICEX2= 100 percent of initial value or 2 nA dc, whichever is greater; hFE2= 20 percent. 14 Required. Required. (1) Shall be performed anytime after temperature

39、cycling, screen 3a; and does not need to be repeated in screening requirements for JANTX and JANTXV level devices. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum. T

40、A= room ambient as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in data criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In additio

41、n, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Method 3100 of MIL-STD-750 to measure TJshall be used. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discret

42、e Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.3 Thermal response (VBE measurements). The VBEmeasurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that

43、 method for determining VH, VCE, IM, IH, tH, and tMD. The VBElimit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier over several die lots and submitted to the qualifying activity for approval. 4.4 Conformance inspection. Conformance inspection shall be in accordan

44、ce with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to, and pass, the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be perform

45、ed again if group B has already been satisfied in accordance with 4.4.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/399F 8 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table

46、 I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein

47、. (See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing). Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 and delta requirements shall be in accordance with table III herein as specified in the footnotes for table III. 4.4.2.1 Group B inspection, table E-VIa (J

48、ANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB= 10 V dc, 2,000 cycles, tON= tOFF= 3 minutes, PD(ON)= PDmax rated per 1.3; PD(OFF)= 0. B5 1027 VCB= 10 V dc, 1,000 hours at 75 percent of maximum rated power shall be applied and ambient temperature adjusted to achieve TJ= +150C minimum.

49、n = 45, c = 0. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the fai