DLA MIL-PRF-19500 168 K-2011 SEMICONDUCTOR DEVICE THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES 2N1771A 2N1772A 2N1774A 2N1776A 2N1777A 2N1778A AND 2N2619A JAN JANTX AND JANTXV.pdf

《DLA MIL-PRF-19500 168 K-2011 SEMICONDUCTOR DEVICE THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES 2N1771A 2N1772A 2N1774A 2N1776A 2N1777A 2N1778A AND 2N2619A JAN JANTX AND JANTXV.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 168 K-2011 SEMICONDUCTOR DEVICE THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES 2N1771A 2N1772A 2N1774A 2N1776A 2N1777A 2N1778A AND 2N2619A JAN JANTX AND JANTXV.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/168K 15 August 2011 SUPERSEDING MIL-PRF-19500/168J 13 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, AND 2N2619A, JAN, JANTX, AND JANTXV This specification is appr

2、oved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNPN, silicon power, reve

3、rse-blocking triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-64). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Limits IO(1) TC= +105C (180 degree conduction angle)

4、 ITSM(2) VGMTJTSTGdv/dt(3) (repetitive) Min Max A 4.7 A 60 V(pk) 10 C -65 +150 C -65 +150 v/s 5 (1) This average forward current is for a maximum case temperature of +105C, and 180 electrical degrees of conduction. (2) Surge rating is non-recurrent and applies only with device in the “on” conducting

5、 state. The peak rate of surge current must not exceed 40 amperes/microsecond during the first 10 s after switching from the “off” (blocking) state to the “on” (conducting) state. This time is measured from the point where the thyristor voltage has decayed to 90 percent of its initial blocking value

6、. (3) TC= -65C to +150C. 1.4 Primary electrical characteristics. Limits VTMIHVGT(1) IGT(1) toff(1) tonMin Max V 1.85 mA dc 25 V dc 0.2 2.0 mA dc 30 s 30 s 5 (1) TC= -65 to +150C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and M

7、aritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process convers

8、ion measures necessary to comply with this revision shall be completed by 15 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 2 1.4.1 Individual ratings. Types VRRMVDRM2N1771A 2N1772A 2N1774A 2N1776A 2N1777A 2N1778A 2

9、N2619A V(pk) (1) 50 100 200 300 400 500 600 V(pk) 50 100 200 300 400 500 600 (1) Values apply for zero or negative gate voltage VGK. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include doc

10、uments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or

11、 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docu

12、ments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at htt

13、ps:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text

14、 of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

15、ense from IHS-,-,-MIL-PRF-19500/168K 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max B .080 .136 2.03 3.45 3 CH .300 .400 7.62 10.2 DT .040 .075 1.02 1.9 e .013 0.33 8 e1 .060 1.52 6 HF .424 .437 10.8 11.1 HT .060 .175 1.52 4.45 4 OAH .700 .855 17.8 21.72 2 D .400 10.2 9 D1 .424 10.8 2 SD

16、.1658 .1697 4.21 4.310 7 SL .400 .453 10.2 11.51 SU .078 1.98 UD .163 .189 4.14 4.80 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Device contour, except on hex head and noted terminal dimensions, is optional within zone defined by D1 and OAH, D1 not to e

17、xceed actual HF. 3. Contour and angular orientation of terminals 1 and 2, with respect to hex portion and to each other, are optional. 4. Chamfer, or undercut, on one or both ends of the hexagonal portion are optional. 5. Square or radius on end of terminal is optional. 6. Minimum difference in term

18、inal lengths to establish datum line for numbering terminals. 7. Pitch diameter - thread 10-32 NF-2A (coated). See FED-STD-H28, “Screw-Thread Standards for Federal Services”. 8. Minimum spacing between terminals. 9. Minimum diameter of seating plane. 10. In accordance with ASME Y14.5M, diameters are

19、 equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-64). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 an

20、d as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, s

21、ymbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: VAA- Anode power supply voltage (dc). 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on fig

22、ure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Lead material. Where a choice of lead material is desired, it shall

23、 be specified in the acquisition document (see 6.2). 3.4.3 Construction. These devices shall be constructed in a manner and using materials which enable the thyristors to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Marking. Marking shall be in accordance with MIL-PRF-195

24、00. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semico

25、nductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qua

26、lification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be p

27、erformed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on t

28、he first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 5 * 4.3 Screening (JANTX and JANTXV level). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and

29、as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) JANTX and JANTXV levels 3a Condition F, 10 cycles. 10 Not required. 11 IRRM1

30、, IDRM1, VGT1, VTM.12 Method 1040 of MIL-STD-750, condition A, TC= +145C minimum, RGK 1K; VRRM, VDRM= rated (see 1.4.1). 13 Subgroup 2 of table I herein, IRRM1= 100 percent of initial value or +1.0 mA (pk), whichever is greater. IDRM1= 100 percent of initial value or +1.0 mA (pk), whichever is great

31、er. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of table I, subgroups 1 a

32、nd 2 inspection only (table E-VIB, group B, subgroup 1 of MIL-PRF-19500 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I he

33、rein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the applicable steps of table II

34、herein. * 4.4.2.1 Group B inspection, table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition F, 15 cycles. B2 4066 ITSM= 60 A(pk) (0.5 sine wave); 10 surges 1 per minute; IO= 4.7 A at rated VRRM; TC= +65C; f = 60 Hz; surge duration = 7 ms, minimum. B3 1026

35、TC= +118C, 5C, 50 min “on”, IO= 1.25 A, TCuncontrolled, 10 minutes “off”. B5 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 6 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the c

36、onditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the applicable steps of table II herein. * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, weight 1

37、0 pounds, application time = 15 seconds. C3 Not applicable. C6 1026 TC= +118C, 5C, 50 min “on”, IO= 1.25 A, TCuncontrolled, 10 minutes “off”. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MI

38、L-PRF-19500, and table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement

39、shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanic

40、al examination 2071 Subgroup 2 Reverse blocking current 4211 AC method, bias condition D; f = 60 Hz; VRRM= rated (see 1.4.1) IRRM11 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz, VDRM= rated (see 1.4.1) IDRM11 mA (pk) Gate trigger voltage and current 2N1771A, 2N1772A 2

41、N1774A, 2N1776A 2N1777A, 2N1778A 2N2619A 4221 V2= VD= 6 V dc; TC= + 25C Re= 20 maximum RL= 50 RL= 50 RL= 50 RL= 50 VGT1 IGT12 15 V dc mA dc Forward “on” voltage 4226 ITM= 14.8 A (pk) (pulse); pulse width = 8.5 ms; maximum; duty cycle = 2 percent maximum VTM1.85 V (pk) Holding current 4201 Bias condi

42、tion D; R2= 50 VAA= 24 V dc maximum; IF1= 1 A dc; IF2= 100 mA dc; trigger voltage source = 6 V dc; trigger PW = 25 s (minimum) IH25 mA dc Reverse gate current 4219 VG= 10 V dc IG250 mA dc Subgroup 3 High temperature operation: TC= +145C minimum Reverse blocking current 4211 AC method, bias condition

43、 D; f = 60 Hz; VRRM= rated (see 1.4.1) IRRM22 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz; VDRM= rated (see 1.4.1) IDRM22 mA (pk) Gate trigger voltage and current 2N1771A, 2N1772A 4221 V2= rated VDM; TC= + 125C minimum; Re= 20 maximum RL= 140 VGT20.2 V dc 2N1774A, 2N

44、1776A 2N1777A, 2N1778A 2N2619A RL= 650 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max

45、Subgroup 3 - Continued Low temperature operation: TC= -65C maximum Reverse blocking current 4211 AC method, bias condition D; f = 60 Hz, VRRM= rated (see 1.4.1) IRRM31 mA (pk) Forward blocking current 4206 AC method, bias condition D; f = 60 Hz; VDRM= rated (see 1.4.1) IDRM31 mA (pk) Gate trigger vo

46、ltage and current 4221 V2= VD= 6 V dc; Re= 20 maximum VGT1IGT22 30 V dc mA dc 2N1771A, 2N1772A RL= 140 2N1774A, 2N1776A 2N1777A, 2N1778A 2N2619A RL= 650 RL= 650 RL= 650 Subgroups 4, 5, and 6 Not applicable Subgroup 7 Exponential rate of voltage rise 4231 Bias condition D; TC= +145C minimum repetitio

47、n rate = 60 pps test duration = 15 s; C = 10 F; 50 RL 400 dv/dt5 V/s 2N1771A VA= 50 V dc VD47 V dc 2N1772A VA= 100 V dc VD95 V dc 2N1774A VA= 200 V dc VD190 V dc 2N1776A VA= 300 V dc VD285 V dc 2N1777A VA= 400 V dc VD380 V dc 2N1778A VA= 500 V dc VD475 V dc 2N2619A VA= 600 V dc VD570 V dc See footno

48、te at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/168K 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 7 - Continued Circuit commutated turn-off time 4224 TC= +145C minimum; ITM= 5 A pk; ton= 100 s; di/dt= 5 A/s minimum; reverse voltage at t1= 2 V minimum; repetition rate = 1 Hz; dv/dt= 5 V/s; gate bias conditions: gate source voltage = 0 V, gate source resistance = 100 toff2N1771A VDM= VDRM= 50 V(pk); VRRM= 5