DLA MIL-PRF-19500 127 W-2012 SEMICONDUCTOR DEVICES DIODE SILICON VOLTAGE REGULATOR TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1 1N4370AUR-1 THROUGH 1N4372AUR-1 AG.pdf
《DLA MIL-PRF-19500 127 W-2012 SEMICONDUCTOR DEVICES DIODE SILICON VOLTAGE REGULATOR TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1 1N4370AUR-1 THROUGH 1N4372AUR-1 AG.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 127 W-2012 SEMICONDUCTOR DEVICES DIODE SILICON VOLTAGE REGULATOR TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1 1N4370AUR-1 THROUGH 1N4372AUR-1 AG.pdf(28页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/127W 6 July 2012 SUPERSEDING MIL-PRF-19500/127V 18 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4
2、370C-1 THROUGH 1N4372C-1 AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1 THROUGH 1N4372D-1 AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH 1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC JANS level (se
3、e 6.4). This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirem
4、ents for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance is provided for each unencapsulated device. * 1.2
5、Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figures 3, 4, and 5 for die. 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9 herein) and as follows: * a. PTL= 500 mW, (DO-35) at TL= +50C, L = .375 inch (9.53 mm); both ends of case or
6、 diode body to heat sink at L = .375 inch (9.53 mm). Derate IZto 0 at +175C. b. PTEC= 500 mW, (DO-213AA) at TEC= +125C, derate to 0 at +175C. -65C TJ +175C; -65C TSTG +175C. c. PT(PCB)= 400 mW, TA= 55C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be add
7、ressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation
8、and process conversion measures necessary to comply with this document shall be completed by 6 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/127W 2 * 1.4 Primary electrical characteristics. Primary electrical characteris
9、tics are as shown in maximum and primary test ratings (see 3.9 herein) and as follows: a. 2.4 V dc VZ 12 V dc. b. 1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are 5 percent voltage tolerance. c. 1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are 2 percent voltage tolerance. d
10、. 1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are 1 percent voltage tolerance. Thermal resistance: RJL= 250C/W maximum at L = .375 inch (9.53 mm) (DO-35). RJEC= 100C/W maximum. Junction to end-caps (DO-213AA). RJA= 300C/W junction to ambient including PCB see note. * NOTE: See figures
11、6, 7, and 8 for derating curves. TA= +75C for both axial and MELF (UR) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (UR) = .067 inch (1.70 mm) x .105 inch (2.67 mm); pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (0.762 m
12、m) x 1 inch (25.4 mm) long, axial lead length L .187 inch ( 4.75 mm); RJA with a defined thermal resistance condition included is measured at IZ= as defined in the electrical characteristics table herein. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sect
13、ions 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must
14、 meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the exten
15、t specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semicon
16、ductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist. dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in
17、 the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for
18、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/127W 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max BD .055 .090 1.40 2.29 3 BL .120 .200 3.05 5.08 4 LD .018 .023 0.46 0.58 LL 1.000 1.500 25.40 38.10 LU .050 1.27 5 NOTES: 1. Dimensions are in i
19、nches. 2. Millimeters are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. The BL dimension shall include the entire body including slugs. 5. Dimension LU shall include the sections of the lead over which the diameter is uncontrolled. This uncontrolle
20、d area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for types 1N4370A-1 through 1N4372A-1, 1N4370C-1 through 1N4372C-1, 1N4370D-1 t
21、hrough 1N4372D-1, 1N746A-1 through 1N759A-1, 1N746C-1 through 1N759C-1, and 1N746D-1 through 1N759D-1 (DO-35). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/127W 4 Symbol Dimensions Inches Millimeters Min Max Min Max BL .130 .146 3.30
22、 3.71 BD .063 .067 1.60 1.71 ECT .016 .022 0.41 0.56 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for types 1N4370AUR-1 through
23、1N4372AUR-1, 1N4370CUR-1 through 1N4372CUR-1, 1N4370DUR-1 through 1N4372DUR-1, 1N746AUR-1 through 1N759AUR-1, 1N746CUR-1 through 1N759CUR-1, and 1N746DUR-1 through 1N759DUR-1 (DO-213AA). DO-213AAProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF
24、-19500/127W 5 (A version) Ltr Dimensions Inches Millimeters Min Max Min Max A .021 .025 0.53 0.63 B .013 .017 0.33 0.43 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die thickness are .010 .002 (0.25 mm 0.051 mm). Me
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