DLA MIL-M-38510 210 F-2013 MICROCIRCUIT DIGITAL 16 384 BIT SCHOTTKY BIPOLAR PROGRAMMABLE READ-ONLY MEMORY (PROM) MONOLITHIC SILICON.pdf

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1、 INCH-POUND MIL-M-38510/210F 19 June 2013 SUPERSEDING MIL-M-38510/210E 27 March 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Depa

2、rtment of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film ni

3、chrome (NiCr) resistors, platinum-silicide, tungsten (W), titanium-tungsten (TiW) or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this

4、product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit Access times (ns) 01 2048 wo

5、rds/8 bits per word PROM with uncommitted 100, 50 collector 02 2048 words/8 bits per word PROM with active pull-up 100, 50 and a third high-impedance state output 03 2048 words/8 bits per word PROM with uncommitted 55, 30 collector 04 2048 words/8 bits per word PROM with active pull-up 55, 30 And a

6、third high-impedance state output 05 4096 words/4 bits per word PROM with active pull-up 80, 40 and a third high-impedance state output 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines are as designated in MIL-STD

7、-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack R GDIP1-T20 or CDIP2-T20 20 Dual-in-line L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3 CQCC1-N28 28 Square leadless chip carrier Comments, s

8、uggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memorydla.mil . Since contact information can change, you may want to verify the currency of this addre

9、ss information using the ASSIST Online database at https:/assist.dla.mil AMSC N/A FSC 5962 Inactive for new design after 24 July 1995 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/210F 2 1.3 Absolute maximum ratings. Supply voltage rang

10、e . -0.5 V dc to +7.0 V dc Input voltage range -1.5 V dc at -10 mA to +5.5 V dc Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction to case (JC): 1/ Cases J, L, and R 40C/W maximum Case K . 60C/W maximum Case 3 0.08C/W maximum 2/ Output

11、 voltage range . -0.5 V dc to +VCC Output sink current 100 mA Maximum power dissipation (PD) 3/ . 1.02 W Maximum,unction temperature (TJ) 4/ +175C 1.4 Recommended operating conditions. Supply voltage . +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (VIH) . 2.0 V dc Maximum l

12、ow-level input voltage (VIL) 0.8 V dc Normalized fanout (each output) 8 mA 5/ Case operating temperature range (TC) -55 C to +125 C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docu

13、ments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or

14、5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cite

15、d in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic

16、Component Case Outline (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Heat sinking is recommended to reduce the junction temperature. 2/ When a

17、thermal resistance value is included in MIL-STD-1835, it shall supersede the value stated herein. 3/ Must withstand the added PD due to short circuit test (e.g. IOS). 4/ Maximum junction temperature shall not be exceeded except for allowable short circuit duration burn-in screening conditions per me

18、thod 5004 of MIL-STD-883. 5/ 16 mA for circuits A, B, D, F, H, and I devices. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/210F 3 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict bet

19、ween the text of this document and the references cited herein (except for related specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Quali

20、fication. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item re

21、quirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. Th

22、e design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3.2 Truth table 3.3.2.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving

23、no altered itme drawing shall be as specified on figure 2. When required in groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test in a checkerboard pattern (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern

24、 which includes at least 25 percent of the total number of bits programmed. 3.3.2.2 Programmed devices. The truth table for programmed devices shall be as specified by the altered item drawing. 3.3.3 Functional block diagram. The functional block diagram shall be as specified on figure 3. 3.3.4 Case

25、 outlines. The case outlines shall be as specified in 1.2.3. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I, and apply o

26、ver the full recommended case operating temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table II, and where applicable, the altered item drawing. The electrical tests for each subgroup are described in table I

27、II. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/210F 4 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C Device type Limits Unit Mi

28、n Max High-level output voltage VOH VCC = 4.5 V; IOH = -2 mA; VIH = 2.0 V; VIL = 0.8 V 02,04,05 2.4 V Low-level output voltage VOL VCC = 4.5 V; IOL = 8 mA; 2/ VIH = 2.0 V; VIL = 0.8 V 01,02 03,04,05 0.5 V Input clamp voltage VIC VCC = 4.5 V; IIN = -10 mA; TC = 25C 01,02 03,04,05 -1.5 V Maximum colle

29、ctor cut-off current ICEX VCC = 5.5 V; VO = 5.2 V 01,03 100 A High-impedance (off-state) output high current IOHZ VCC = 5.5 V; V0 = 5.2 V 02,04,05 100 A High-impedance (off-state) output low current IOLZ VCC = 5.5 V; V0 = 0.5 V 02,04,05 -100 A High-level input current IIH VCC = 5.5 V; VIN = 5.5 V 01

30、,02 03,04,05 50 A Low-level input current IIL VCC = 5.5 V; VIN = 0.5 V 01,02 03,04,05 -250 A Short circuit output current IOS VCC = 5.5 V; V0 = 0.0 V 3/ 02,04,05 -10 -100 mA Supply current ICC VCC = 5.5 V; VIN = 0; outputs = open 01,02 03,04,05 185 mA Propagation delay time, high-to-low level logic,

31、 address to output tPHL1 VCC = 4.5 V and 5.5 V; CL = 30 pF (see figure 4) 01,02 100 ns 03,04 55 05 80 Propagation delay time, low-to-high level logic, address to output tPLH1 01,02 100 ns 03,04 55 05 80 Propagation delay time, high-to-low level logic, enable to output tPHL2 01,02 50 ns 03,04 30 05 4

32、0 Propagation delay time, low-to-high level logic, enable to output tPLH2 01,02 50 ns 03,04 30 05 40 1/ Complete terminal conditions shall be specified in table III. 2/ IOL = 16 mA for circuits A, B, D, F, H, I, and J. 3/ Not more than one output shall be grounded at one time. Output shall be at hig

33、h logic level prior to test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/210F 5 TABLE II. Electrical test requirements. Subgroups (see table III) 1/, 2/, 3/ MIL-PRF-38535 test requirements Class S devices Class B devices Interim elect

34、rical parameters 1 1 Final electrical test parameters for unprogrammed devices 1*, 2, 3, 7*, 8 1*, 2, 3, 7*, 8 Final electrical test parameters for programmed devices 1*, 2, 3, 7* 8, 9, 10, 11 1*, 2, 3, 7*, 8, 9, Group A test requirements 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8 9, 10, 11 Group B end-

35、point electrical parameters subgroup 5 1, 2, 3, 7, 8, 9, 10, 11 N/A Group C end-point electrical parameters 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8 Group D test requirements 1, 2, 3, 7, 8 1, 2, 3, 7, 8 1/ * PDA applies to subgroups 1 and 7. 2/ Any or all subgroups may be combined when using high-spee

36、d testers. 3/ Subgroups 7 and 8 shall consist of verifying the pattern specified. 3.8 Processing options. Since the PROM is an unprogrammed memory capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations, two processing options are provided for

37、 selection in the contract, using an altered item drawing. 3.8.1 Unprogrammed PROM delivered to the user. All testing shall be verified through group A testing as defined in 3.3.2.1, table II, and table III. It is recommended that users perform subgroups 7 and 9 after programming to verify the speci

38、fic program configuration. 3.8.2 Maunufacturer-programmed PROM delivered to the user. All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 3.9 Microcircuit group assignment.

39、 The devices covered by this specification shall be in microcircuit group number 14 (see Appendix A MIL-PRF-38535.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/210F 6 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspectio

40、n procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shal

41、l be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance

42、 with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inpu

43、ts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the disc

44、retion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535, appendix B. d. Class B devices processed to an altered item drawing may be programmed either before or after burn-in at the manufacturers discretion. The required electrical testing sh

45、all include, as a minimum, the final electrical tests for programmed devices as specified in table II herein. Class S devices processed by the manufacturer to an altered item drawing shall be programmed prior to burn-in. 4.3 Qualification inspection. Qualification inspection shall be in accordance w

46、ith MIL-PRF-38535. 4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and as specified herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordance wit

47、h table III of MIL-PRF-38535 and as follows: a. Electrical test requirements shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted. c. For unprogrammed devices, a sample shall be be selected to satisfy programmability requirements prior to performing subgroups 9, 10, an

48、d 11. Twelve devices shall be submitted to programming (see 3.3.2.1). If more than 2 devices fail to program, the lot shall be rejected. At the manufacturers option, the sample may be increased to 24 total devices with no more than 4 total device failures allowed. d. For unprogrammed devices, 10 devices from the programmability sample shall be submitted to the requirements of group A, subgroups 9, 10, and 11. If more than two total devices fail in all three subgroups, the lot shall be rejected. At the manufacturers option, the sample may be increased to 20 total devices with no